Semiconductor wafer treatment method

Abstract

A semiconductor wafer treatment method for dividing an adhesive tape, which has been stuck to the entire back of a semiconductor wafer, along divided streets of the semiconductor wafer. Before division of the adhesive tape by application of laser beams, the state of the divided streets is detected, and laser beams are applied to the adhesive tape based on such detection.

1. A semiconductor wafer treatment method for a semiconductor wafer having a plurality of rectangular regions partitioned on a face of the wafer by streets arranged in a lattice pattern on the face, comprising dividing the wafer along the streets, sticking an adhesive tape to an entire back of the wafer, and then dividing the adhesive tape along the streets which have been divided,
 the semiconductor wafer treatment method further comprising: 
 detecting a state of the divided streets before dividing the adhesive tape along the divided streets wherein the detection of the state of the divided streets involves detecting, on the divided streets, xy-coordinate positions of at least 3 points spaced from each other in an extending direction of the streets; and 
 performing division of the adhesive tape by applying laser beams to the adhesive tape based on detection of the state of the divided streets. 
 
     
     
       2. The semiconductor wafer treatment method according to  claim 1 , wherein the detection of the state of the divided streets involves:
 calculating a linear functional line by a method of least-squares based on the coordinate positions of the 3 points; 
 calculating an inclination angle of the linear functional line; and 
 calculating amounts of displacement, in a y-axis direction, of the 3 points with respect to the linear functional line when the linear functional line has been modified to extend parallel to an x-axis direction. 
 
     
     
       3. The semiconductor wafer treatment method according to  claim 1 , further comprising, on the divided streets:
 applying a laser beam to the adhesive tape along a straight line connecting one end of the linear functional line to the point of the 3 points nearest to the one end, thereby dividing the adhesive tape; 
 then applying a laser beam along a straight line connecting the nearest point to the point of the 3 points second nearest to the one end, thereby dividing the adhesive tape; 
 then applying a laser beam along a straight line connecting the second nearest point to the point of the 3 points third nearest to the one end, thereby dividing the adhesive tape; and 
 then applying a laser beam along a straight line connecting the third nearest point to an opposite end of the linear functional line, thereby dividing the adhesive tape. 
 
     
     
       4. The semiconductor wafer treatment method according to  claim 1 , further comprising:
 forming grooves of a predetermined depth d in the face of the wafer along the streets; 
 then sticking a protective tape to the face of the wafer; 
 then grinding the back of the wafer to render a thickness of the wafer substantially identical with the predetermined depth d, thereby dividing the wafer along the streets; and 
 then sticking the adhesive tape to the back of the wafer.