Process for producing semiconductor device

Abstract

A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (−55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.

1. A process for producing a semiconductor device comprising a substrate having bumps formed thereon, which comprises covering a bump-possessing substrate on the bump side with an adhesive film which has a modulus of elasticity at −55° C. of from 100 MPa to 5 GPa and has a thickness of from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom. 
   
   
     2. The process for producing a semiconductor device of  claim 1 , wherein the adhesive film comprises a thermosetting resin composition. 
   
   
     3. The process for producing a semiconductor device of  claim 2 , wherein the thermosetting resin composition is a polycarbodiimide resin composition. 
   
   
     4. The process for producing a semiconductor device of  claim 2 , wherein the adhesive film is to be cured simultaneously with the mounting of the semiconductor device on a circuit board by the reflow of the bumps. 
   
   
     5. The process for producing a semiconductor device of  claim 3 , wherein the adhesive film is to be cured simultaneously with the mounting of the semiconductor device on a circuit board by the reflow of the bumps.