Chemical mechanical polishing composition

Abstract

A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue inhibitor is selected from the group of compounds having the following formulas: and combinations thereof, wherein R 1 , R 2 , R 3 , and R 4 are independently selected from H, C 1 -C 6 alkyl, C 2 -C 6 alkenyl, and C 2 -C 6 alkylidyne; and R 5 , R 6 , R 7 , R 8 , R 9 , and R 10 are independently selected from H and C 1 -C 6 alkyl.

1. A chemical mechanical polishing composition composing: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor having the following formula (I), and water: 
       
         
           
           
               
               
           
         
       
     
     
       2. The chemical mechanical polishing composition of  claim 1 , wherein said abrasive component is present in an amount ranging from 0.10 to 25.00 wt %, said corrosion inhibitor is present in an amount ranging from 0.01 to 1.00 wt %, said surfactant is present in an amount ranging from 0.01 to 1.00 wt %, said diacid compound is present in an amount ranging from 0.01 to 1.00 wt %, said metal residue inhibitor is present in an amount ranging from 0.01 to 1.00 wt %, and the remainder is water. 
     
     
       3. The chemical mechanical polishing composition of  claim 2 , wherein said abrasive component is present in an amount ranging from 0.50 to 10.00 wt %. 
     
     
       4. The chemical mechanical polishing composition of  claim 3 , wherein said abrasive component is present in an amount ranging from 0.50 to 5.00 wt %. 
     
     
       5. The chemical mechanical polishing composition of  claim 2 , further comprising 0.01 to 1.00 wt % formic acid. 
     
     
       6. The chemical mechanical polishing composition of  claim 2 , wherein said corrosion inhibitor is present in an amount ranging from 0.01 to 0.50 wt %. 
     
     
       7. The chemical mechanical polishing composition of  claim 6 , wherein said corrosion inhibitor is present in an amount ranging from 0.01 to 0.20 wt %. 
     
     
       8. The chemical mechanical polishing composition of  claim 2 , wherein said surfactant is present in an amount ranging from 0.01 to 0.50 wt %. 
     
     
       9. The chemical mechanical polishing composition of  claim 8 , wherein said surfactant is present in an amount ranging from 0.10 to 0.30 wt %. 
     
     
       10. The chemical mechanical polishing composition of  claim 2 , wherein said diacid compound is present in an amount ranging from 0.05 to 1.00 wt %. 
     
     
       11. The chemical mechanical polishing composition of  claim 10 , wherein said diacid compound is present in an amount ranging from 0.10 to 1.00 wt %. 
     
     
       12. The chemical mechanical polishing composition of  claim 2 , wherein said metal residue inhibitor is present in an amount ranging from 0.01 to 0.50 wt %. 
     
     
       13. The chemical mechanical polishing composition of  claim 12 , wherein said metal residue inhibitor is present in an amount ranging from 0.01 to 0.30 wt %. 
     
     
       14. The chemical mechanical polishing composition of  claim 1 , wherein said corrosion inhibitor is selected from the group consisting of benzotriazole, 1,3,5-triazine-2,4,6,-triol, 1,2,3-triazole, 3-amino-1,2,4-triazole, 3-nitro-1,2,4-triazole, 4-amino-3-hydrazino-1,2,4-triazole-5-thiol, benzotriazole-5-carboxylic acid, 3-amino-1,2,4-triazole-5-carboxylic acid, 1-hydroxy benzotriazole, nitrobenzotriazole, and combinations thereof. 
     
     
       15. The chemical mechanical polishing composition of  claim 1 , wherein said surfactant is selected from the group consisting of anionic type and nonionic type. 
     
     
       16. The chemical mechanical polishing composition of  claim 1 , wherein said composition has a pH value ranging from 2 to 5. 
     
     
       17. The chemical mechanical polishing composition of  claim 16 , wherein said composition has a pH value ranging from 3 to 4. 
     
     
       18. The chemical mechanical polishing composition of  claim 1 , wherein said abrasive component is selected from the group consisting of: SiO 2 , Al 2 O 3 , ZrO 2 , CeO 2 , SiC, TiO 2 , Si 3 N 4 , and combinations thereof. 
     
     
       19. The chemical mechanical polishing composition of  claim 1 , further comprising an oxidizing agent selected from the group consisting of hydrogen peroxide, ferric nitrate, potassium iodate, acetic hydroperoxide, and potassium permanganate. 
     
     
       20. The chemical mechanical polishing composition of  claim 19 , wherein the weight ratio of said oxidizing agent to the mixture of said abrasive component, said corrosion inhibitor, said surfactant, said diacid compound, said metal residue inhibitor, and water ranges from 1:9 to 1:30. 
     
     
       21. The chemical mechanical polishing composition of  claim 1 , wherein said diacid compound is selected from the group consisting of: succinic acid, adipic acid, glutaric acid, and combinations thereof.