US7744721B2ExpiredUtilityA1

Plasma processing apparatus

88
Assignee: HITACHI HIGH TECH CORPPriority: Apr 13, 2004Filed: Sep 25, 2009Granted: Jun 29, 2010
Est. expiryApr 13, 2024(expired)· nominal 20-yr term from priority
H01J 37/321
88
PatentIndex Score
7
Cited by
14
References
2
Claims

Abstract

A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage.

Claims

exact text as granted — not AI-modified
1. A plasma processing apparatus comprising:
 a processing chamber for subjecting an object to plasma processing; 
 an inlet means for introducing a gas for plasma processing into the processing chamber; 
 an evacuation means for evacuating an interior of the processing chamber; 
 a sample stage for placing the object; 
 a power supply means for enabling generation of plasma in the processing chamber; and 
 at least one induction coil which enables generation of the plasma in the processing chamber; 
 wherein the induction coil is disposed above an outer surface of the process chamber and formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage, the plurality of identical coil elements include at least two identical coil elements in the parallel circuit-like arrangement, and the induction coil is formed on the periphery of an annular ring having an arbitrary polygonal cross-sectional shape and being an insulating member; 
 wherein input ends of the coil elements are arranged at equal angular intervals calculated by dividing 360° by the number of coil elements; 
 wherein continuous conductor portions of the coil elements are formed on different adjacent polygonal surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring, by which the conductor portions of the coil elements are disposed so as to be displaced at a time from one surface of the annular ring to another surface adjacent thereto while extending in the circumferential direction, and the annular ring is arranged so that a central axis thereof corresponds to the central axis of the object; and 
 wherein the conductor portions of the coil elements extend along the circumferential direction of the different adjacent surfaces of the annular ring while maintaining a constant radial distance with respect to a center of the annular ring while extending along the circumferential direction of a respective surface of the annular ring. 
 
     
     
       2. The plasma processing apparatus according to  claim 1 , wherein the at least one induction coil is formed of a total of three turns utilizing four circuits of 3/4 turn coil elements.

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