Compound semiconductor light-emitting device and production method thereof

Abstract

A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

1. A method for producing a pn-junction compound semiconductor light-emitting device comprising the steps of:
 forming a stacked structure through sequentially stacking on a crystal substrate a lower cladding layer, a light-emitting layer composed of n-type or p-type aluminum gallium indium phosphide, an upper cladding layer, and an n-type or a p-type conductor layer composed of an undoped boron-containing Group III-V compound semiconductor, and a step of joining the conductor layer to a light-permeable substrate; 
 wherein the crystal substrate is removed after joining of the conductor layer to the light-permeable substrate, and 
 wherein the conductor layer is formed though crystal growth at a growth rate of 20 nm/min to 30 nm/min and contains twins, having, as a twining plate, a (111) lattice plane of the boron containing Group III-V compound semiconductor. 
 
   
   
     2. The method for producing a pn-junction compound semiconductor light-emitting device according to  claim 1 , wherein the conductor layer is formed through crystal growth at a growth rate of 20 nm/min to 30 nm/min until the conductor layer thickness reaches 10 nm to 25 nm, followed by crystal growth at a growth rate less than 20 nm/min until the conductor layer comes to have a thickness of interest. 
   
   
     3. The method for producing a pn-junction compound semiconductor light-emitting device according to  claim 1 , wherein the conductor layer is composed of an undoped BP-based semiconductor.