Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment

Abstract

Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.

1. A method for manufacturing a semiconductor device, comprising:
 forming a mask over a semiconductor film; 
 outputting a plurality of laser lights from a plurality of laser oscillation apparatuses; 
 forming one beam spot by having beam spots of the plurality of laser lights overlap each other using an optical system comprising a cylindrical lens on the semiconductor film; 
 irradiating a portion of the semiconductor film with the formed beam spot by scanning the formed beam spot in accordance with the mask so that the semiconductor film is partially crystallized; and 
 patterning the semiconductor film by using the mask to form an island like semiconductor film using the crystallized portion of the semiconductor film. 
 
     
     
       2. A method for manufacturing a semiconductor device, comprising:
 forming a mask over a semiconductor film; 
 outputting a plurality of laser lights from a plurality of laser oscillation apparatuses; 
 forming one beam spot by having beam spots of the plurality of laser lights overlap each other using an optical system comprising a cylindrical lens so that centers of the beam spots draw a straight line on the semiconductor film; 
 irradiating a portion of the semiconductor film with the formed beam spot by scanning the formed beam spot in accordance with the mask so that the semiconductor film is partially crystallized; and 
 patterning the semiconductor film by using the mask to form an island like semiconductor film using the crystallized portion of the semiconductor film. 
 
     
     
       3. A method for manufacturing a semiconductor device according to any one of  claims 1  and  2 , wherein the plurality of laser oscillation apparatuses are a solid laser of continuous oscillation. 
     
     
       4. A method for manufacturing a semiconductor device according to any one of  claims 1  and  2 , wherein the laser oscillation apparatus is at least one kind of laser selected from the group consisting of a YAG laser, a YVO 4  laser, a YLF laser, a YAlO 3  laser, a glass laser, a ruby laser, an alexandrite laser, a Y 2 O 3  laser, and a Ti:sapphire laser of continuous oscillation. 
     
     
       5. A method for manufacturing a semiconductor device according to any one of  claims 1  and  2 , wherein the laser oscillation apparatus is at least one kind of laser selected from the group consisting of an excimer laser, an Ar laser, and a Kr laser of continuous oscillation. 
     
     
       6. A method for manufacturing a semiconductor device according to any one of  claims 1  and  2 , wherein the plurality of laser lights are second harmonics. 
     
     
       7. A method for manufacturing a semiconductor device according to any one of  claims 1  and  2 , wherein the number of the plurality of laser oscillation apparatuses ranges from 2 to 8. 
     
     
       8. A method for manufacturing a semiconductor device according to any one of  claims 1  and  2 , further comprising:
 forming a marker on the semiconductor film before irradiating the portion of semiconductor film with the formed beam spot.