Laser annealing method for manufacturing semiconductor device

Abstract

A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

1. A method for manufacturing a semiconductor device, comprising the steps of:
 forming gates on a semiconductor substrate; 
 forming a first insulation layer on the semiconductor substrate and on the gates; 
 primary annealing the first insulation layer using a laser; 
 forming a second insulation layer on the first insulation layer having undergone the primary annealing; and 
 secondary annealing the second insulation in the same manner as the primary annealing, 
 wherein the primary and secondary annealing is conducted using a XeCl excimer laser using Xe and HCl as a source gas and using He, Ne and Ar as a diluent gas, and using a power density of 50˜200 mJ/cm 2 . 
 
     
     
       2. The method according to  claim 1 , wherein, after the step of forming the gates and before the step of forming the first insulation layer, the method further comprises the steps of:
 forming spacers on both sidewalls of the gates; and 
 forming a capping layer on the gates, on the spacers and on the semiconductor substrate. 
 
     
     
       3. The method according to  claim 2 , wherein the spacers comprise at least one of an oxide layer and a nitride layer. 
     
     
       4. The method according to  claim 2 , wherein the capping layer comprises a nitride layer. 
     
     
       5. The method according to  claim 1 , wherein the first and second insulation layer comprises a borophosphosilicate glass (BPSG) layer. 
     
     
       6. The method according to  claim 1 , wherein the primary and secondary annealing is conducted using wavelengths between 248˜308 nm. 
     
     
       7. The method according to  claim 1 , wherein the primary and secondary annealing is conducted using pulse widths of 55˜500 nsec. 
     
     
       8. The method according to  claim 1 , wherein the primary and secondary annealing is conducted using energy densities of 120˜790 mJ/cm 2 . 
     
     
       9. The method according to  claim 1 , wherein the primary and secondary annealing is conducted using 1˜1,000 laser pulses. 
     
     
       10. The method according to  claim 1 , wherein the primary and secondary annealing is conducted at a temperature of 800˜1,100° C. 
     
     
       11. The method according to  claim 1 , wherein the primary and secondary annealing is conducted under a pressure of 1×10 −6 ˜1 Torr. 
     
     
       12. The method according to  claim 1 , wherein the first insulation layer is formed to a thickness of about 100 to 500 Å. 
     
     
       13. The method according to  claim 1 , wherein the second insulation layer is formed to a thickness of about 4,000 to 5,000 Å. 
     
     
       14. The method according to  claim 1 , wherein the primary and secondary annealing are conducted about 55 to 500 nsec in total.