Method for manufacturing epitaxial wafer

Abstract

An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.

1. A method of manufacturing an epitaxial wafer, comprising:
 growing an epitaxial film on a front surface of a semiconductor wafer in a vapor-phase epitaxial method; and 
 removing a scratch having a depth of 0.5 μm or greater and a length of 1 μm or greater, the scratch being generated in the epitaxial growth, in a boundary area with a chamfered surface of a rear surface of the semiconductor wafer. 
 
     
     
       2. The method of manufacturing the epitaxial wafer according to  claim 1 , wherein, in the scratch removal, the scratch is removed by polishing the rear surface. 
     
     
       3. The method of manufacturing the epitaxial wafer according to  claim 1 , wherein, in the scratch removal, the scratch is removed by etching the rear surface.