Plasma processing apparatus and plasma processing method

Abstract

There is provided a plasma processing device capable of forming a film in a favorable manner irrespective of deflection generated in an anode electrode and a cathode electrode in the case where an area of the electrodes is increased. A plasma processing device 100 includes a chamber 15 , a gas introducing portion 28 , an exhaust unit 29 , and a high-frequency power supply unit 30 . In the chamber 15 , there are provided an anode electrode (first electrode) 4 having a flat-plate shape, a cathode electrode (second electrode) 12 having a flat-plate shape, and first supporting members 6 and second supporting members 5 for slidably supporting the two electrodes 4 and 12 in parallel with each other. The cathode electrode 12 is provided so as to face the anode electrode 4 . The anode electrode 4 and the cathode electrode 12 are not fixed with screws or the like but are merely placed on the first supporting members 6 and the second supporting members 5 . In the anode electrode 4 and the cathode electrode 12 , deflection amounts when they are freely deflected under their own weights are equal to each other, and maximum deflection amounts of the two electrodes 4 and 12 are also equal to each other.

1. A plasma processing device comprising: a reaction chamber; a gas introducing portion that introduces a reactant gas into the reaction chamber; an exhaust unit that discharges the reactant gas from the reaction chamber; a first electrode and a second electrode supported in the reaction chamber and having a flat-plate shape; and a first supporting member and a second supporting member that support the first and second electrodes such that the electrodes face each other, wherein maximum deflection amounts of the first and second electrodes, which are maximum sinking distances under their own weights, in a state where the first and second electrodes are supported by the first and second supporting members, are adapted to be equal to each other, and wherein the first and second electrodes are distant from each other by a predetermined inter-electrode distance, and wherein the shapes, sizes, and materials of the first and second electrodes are adapted in such a manner that maximum deflection amounts thereof are at least 1% of the inter-electrode distance, and wherein the first and second electrodes are subjected to an annealing process, and wherein the thickness of the first and second electrodes are set in a range of 10 to 50 mm. 
     
     
       2. The plasma processing device according to  claim 1 , wherein the first and second electrodes have a hollow structure. 
     
     
       3. The plasma processing device according to  claim 1 , wherein the first and second electrodes are supported to be movable in a limited range. 
     
     
       4. The plasma processing device according to  claim 1 , wherein a material used for the first and second electrodes is aluminum alloy. 
     
     
       5. The plasma processing device according to  claim 1 , wherein
 a substrate to be processed is provided between the first and second electrodes in a state where the substrate is deflected along the deflection of the two electrodes. 
 
     
     
       6. The plasma processing device according to  claim 5 , further comprising a tray having a thin-plate shape on which the substrate is placed. 
     
     
       7. The plasma processing device according to  claim 6 , wherein the substrate is set on the tray.