Apparatus and methods for using high frequency chokes in a substrate deposition apparatus
Abstract
In certain aspects, a substrate deposition apparatus, including a gas tube coupled to a gas source, an RF power source and a substrate processing chamber, is provided. The gas tube is adapted to carry process gas and cleaning plasma from the gas source/remote plasma gas source to the substrate processing chamber and the RF power source is adapted to couple RF power to the substrate processing chamber. Furthermore an RF choke coupled to the RF power source and the gas source wherein the RF choke is adapted to attenuate a voltage difference between the RF power source and the gas source to prevent plasma formation in the gas tube during substrate processing. Numerous other aspects are provided.
Claims
exact text as granted — not AI-modified1. A method, comprising:
providing a gas tube, a gas source, an RF power source and a substrate processing chamber;
carrying gas from the gas source to the substrate processing chamber via the gas tube;
coupling RF power to the substrate processing chamber;
providing an RF choke;
attenuating a voltage difference between the RF power source and the gas source with the RF choke.
2. The method of claim 1 , wherein providing an RF choke includes disposing the RF choke around the gas tube.
3. The method of claim 1 , wherein providing an RF choke includes providing a wire wrapped into a coil.
4. The method of claim 3 , wherein providing a wire wrapped into a coil includes disposing the wire around the gas tube.
5. The method of claim 4 , wherein disposing the wire around the gas tube further includes ensuring the pitch of the wire is substantially constant.
6. The method of claim 1 , wherein providing a gas tube includes providing dielectric material.
7. The method of claim 6 , wherein providing the RF choke includes providing a wire wrapped into a coil.
8. The method of claim 7 , wherein providing a wire wrapped into a coil includes disposing the wire around the gas tube.
9. The method of claim 8 , wherein disposing the wire around the gas tube further includes ensuring the pitch of the wire is substantially constant.
10. The method of claim 3 , wherein providing a wire wrapped into a coil includes providing a wire coated with dielectric material.
11. The method of claim 10 , wherein providing a wire coated with a dielectric material includes disposing the wire coated with a dielectric material around the gas tube.
12. A method of operating a processing chamber, comprising:
providing a first channel for a plasma gas flow to a processing chamber;
providing a second channel including a gas tube for flowing a cleaning plasma gas to the processing chamber via the first channel;
providing an RF choke; and
restricting plasma from the processing chamber from flowing into the second channel using the RF choke during plasma processing in the chamber.
13. The method of claim 12 , wherein providing an RF choke includes disposing the RF choke around the gas tube.
14. The method of claim 12 , wherein providing an RF choke includes providing a wire wrapped into a coil.
15. The method of claim 14 , wherein providing a wire wrapped into a coil includes disposing the wire around the gas tube.
16. The method of claim 15 , wherein disposing the wire around the gas tube further includes ensuring the pitch of the wire is substantially constant.
17. The method of claim 12 , wherein providing a second channel including a gas tube includes providing dielectric material.
18. The method of claim 17 , wherein providing the RF choke includes providing a wire wrapped into a coil.
19. The method of claim 18 , wherein providing a wire wrapped into a coil includes disposing the wire around the gas tube.
20. The method of claim 19 , wherein disposing the wire around the gas tube further includes ensuring the pitch of the wire is substantially constant.Cited by (0)
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