Controlled deposition of silicon-containing coatings adhered by an oxide layer

Abstract

We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

1. A method of depositing a coating on a substrate from a vapor phase, wherein a surface roughness of said coating is controlled by controlling a total pressure in a processing chamber in which said coating is deposited, a partial pressure of at least one coating precursor, and a temperature of a substrate on which said coating is deposited, wherein there are a plurality of coating precursors, and at least one of said coating precursors is charged to said process chamber in a batch-like addition by adding the at least one of said coating precursors into the process chamber in controlled aliquots, which may be repeated a number of times to provide a desired coating thickness, wherein the batch-like addition includes accumulating a specific quantity of the at least one of said coating precursors to define each controlled aliquot, and dosing of the accumulated specific quantity directly to the process chamber. 
     
     
       2. A method in accordance with  claim 1 , wherein at least one temperature of a major processing surface inside said processing chamber is also controlled. 
     
     
       3. A method in accordance with  claim 1 , wherein said surface roughness of said coating is also controlled by limiting a thickness to which said coating is permitted to grow. 
     
     
       4. A method in accordance with  claim 1 , wherein there are a plurality of coating precursors, and said coating precursors are charged to said process chamber essentially simultaneously. 
     
     
       5. A method in accordance with  claim 1 , wherein there are a plurality of coating precursors, and said coating precursors are charged to said process chamber in a predetermined sequence. 
     
     
       6. A method in accordance with  claim 2 , wherein said total pressure, said partial pressure of said at least one coating precursor, said temperature of said substrate, and said temperature of said at least one major component surface inside said processing chamber are controlled to drive the reaction location of said at least one precursor toward said substrate surface. 
     
     
       7. A method in accordance with  claim 6 , wherein said reaction location is on said substrate surface. 
     
     
       8. A method in accordance with  claim 6 , wherein said surface roughness of said coating is also controlled by limiting the thickness to which said coating is permitted to grow. 
     
     
       9. A method in accordance with  claim 1 , wherein said at least one coating precursor includes a silane selected from the group consisting of chlorosilanes, chlorosiloxanes, fluorosilanes, fluorosiloxanes and combinations thereof. 
     
     
       10. A method in accordance with  claim 9 , wherein said at least one precursor also includes water vapor. 
     
     
       11. A method in accordance with  claim 9 , wherein said silane is charged to said process chamber prior to charging of said water vapor. 
     
     
       12. A method of controlling the surface roughness of an organo-silicon-containing coating on a substrate, wherein said coating is deposited from a vapor phase, wherein at least one organosilane precursor for said coating is introduced into a coating deposition chamber in which said coating is deposited, followed by the introduction of water, and wherein said surface roughness is further controlled by controlling a total pressure in said deposition chamber, a partial pressure of at least one precursor, and a temperature of a substrate on which said coating is deposited, wherein at least one of said organosilane precursor and water is charged to said process chamber in a batch-like addition by adding said organosilane precursor or water into the process chamber in controlled aliquots, which may be repeated a number of times to provide a desired coating thickness, wherein the batch-like addition includes accumulating a specific quantity of the at least one of said coating precursors to define each controlled aliquot, and dosing of the accumulated specific quantity directly to the process chamber. 
     
     
       13. A method in accordance with  claim 12 , wherein at least two organosilane precursors are introduced into said coating deposition chamber, followed by the introduction of water, whereby controllable co-deposition of said organosilane precursors is obtained. 
     
     
       14. A method in accordance with  claim 12 , wherein a partial pressure of each precursor is controlled to adjust said surface roughness of said organosilane coating. 
     
     
       15. A method in accordance with  claim 12 , wherein a partial pressure of said water precursor is controlled to adjust said surface roughness of said organosilane coating.