Capacitor forming methods

Abstract

A capacitor forming method includes forming an electrically conductive support material over a substrate, forming an opening through at least the support material to the substrate, and, after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. The support material contains at least 25 at % carbon. Another capacitor forming method includes forming a support material over a substrate, forming an opening through at least the support material to the substrate, and, after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. The support material contains at least 20 at % carbon. The support material has a thickness and the opening has an aspect ratio 20:1 or greater within the thickness of the support material.

1. A capacitor forming method comprising:
 forming an electrically conductive support material over a substrate, the support material containing at least 25 at % carbon, the carbon being primarily in the form of an electrically conductive, carbon backbone polymer; 
 forming an opening through at least the support material to the substrate; and 
 after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. 
 
     
     
       2. A capacitor forming method comprising:
 forming an electrically conductive support material over a substrate, the support material consisting of from about 55 to about 70 at % carbon, about 5 at % or less of nitrogen, oxygen, sulfur, metals, and semimetals, and the remainder hydrogen; 
 forming an opening through at least the support material to the substrate; and 
 after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. 
 
     
     
       3. A capacitor forming method comprising:
 forming a support material over a substrate, the support material containing at least 20 at % carbon, the support material comprising titanium, the titanium in the support material not exceeding 12 at %, the support material not comprising silicon; 
 forming an opening through at least the support material to the substrate, the support material having a thickness and the opening having an aspect ratio of 20:1 or greater within the thickness of the support material; and 
 after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. 
 
     
     
       4. A capacitor forming method comprising:
 forming a support material over a substrate, the support material containing at least 20 at % carbon, the support material comprising titanium and silicon, titanium in the support material not exceeding 7.7 at %, and silicon in the support material not exceeding 12.5 at %; 
 forming an opening through at least the support material to the substrate, the support material having a thickness and the opening having an aspect ratio of 20:1 or greater within the thickness of the support material; and 
 after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. 
 
     
     
       5. A capacitor forming method comprising:
 forming an electrically conductive support material over a substrate, the support material containing at least 25 at % carbon, the support material further comprising titanium; 
 forming an opening through at least the support material to the substrate; and 
 after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. 
 
     
     
       6. The method of  claim 5  wherein the support material comprises silicon. 
     
     
       7. A capacitor forming method comprising:
 forming a non-crystalline, electrically conductive support material over a substrate, the support material containing at least 50 at % carbon, which is primarily in the form of an electrically conductive, carbon backbone polymer; 
 anisotropically etching an opening through at least the support material to the substrate; 
 after forming the opening, forming a first capacitor electrode in the opening; 
 after forming the first electrode, dry stripping all of the support material; 
 forming a dielectric material contacting the first electrode; and 
 forming a second capacitor electrode contacting the dielectric material. 
 
     
     
       8. The method of  claim 7  wherein the support material consists of from about 55 to about 70 at % carbon, about 5 at % or less of nitrogen, oxygen, sulfur, metals, and semimetals, and the remainder hydrogen. 
     
     
       9. The method of  claim 7  wherein the support material further comprises titanium and/or silicon. 
     
     
       10. A capacitor forming method comprising:
 forming a non-crystalline support material over a substrate, the support material containing at least 25 at % carbon, which is primarily in the form of an electrically conductive, carbon backbone polymer or a hydrocarbon-containing, silicate backbone polymer; 
 anisotropically etching an opening through at least the support material to the substrate, the support material having a thickness of greater than 1 μm and the opening having an aspect ratio of 20:1 or greater within the thickness of the support material; 
 after forming the opening, forming a first capacitor electrode in the opening; 
 forming a dielectric material contacting the first electrode; and 
 forming a second capacitor electrode contacting the dielectric material. 
 
     
     
       11. The method of  claim 10  wherein the support material comprises an electrically conductive hydrocarbon-containing, silicate backbone polymer. 
     
     
       12. A capacitor forming method comprising:
 forming a support material over a substrate, the support material containing at least 20 at % carbon; the carbon being primarily in the form of an electrically conductive, carbon backbone polymer or a hydrocarbon-containing, silicate backbone polymer; 
 forming an opening through at least the support material to the substrate, the support material having a thickness and the opening having an aspect ratio of 20:1 or greater within the thickness of the support material; and 
 after forming the opening, forming a capacitor structure contacting the substrate and the support material in the opening. 
 
     
     
       13. The method of  claim 12  wherein the support material is electrically insulative. 
     
     
       14. The method of  claim 12  wherein the support material is non-crystalline. 
     
     
       15. The method of  claim 12  wherein forming the opening comprises anisotropically etching the support material. 
     
     
       16. The method of  claim 12  wherein the thickness is greater than 1 μm. 
     
     
       17. The method of  claim 12  wherein the capacitor structure is a first capacitor electrode and the method further comprises forming a dielectric material contacting the first electrode and forming a second capacitor electrode contacting the dielectric material. 
     
     
       18. The method of  claim 12  wherein
 the support material comprises an electrically conductive hydrocarbon-containing, silicate backbone polymer. 
 
     
     
       19. The method of  claim 12  wherein the support material further comprises titanium and/or silicon. 
     
     
       20. The method of  claim 19  wherein silicon does not exceed 26 at % and the support material does not comprise titanium.