Polishing pad, method of producing the same and method of producing semiconductor device by using the same

Abstract

The present invention provides a polishing pad used for planarizing inter layer dielectrics and the like by CMP (chemical mechanical polishing) in the manufacturing process of a semiconductor device, a method of producing the polishing pad and a method of producing a semiconductor device by using the polishing pad. The present invention relates to a semiconductor wafer polishing pad having grooves in a polishing surface and formed from a foamed polyurethane, wherein a processed surface of the groove comprising a side surface and a bottom surface has a surface roughness Ra of not more than 10.

What is claimed is: 
     
       1. A method of producing a semiconductor wafer polishing pad, comprising:
 providing a polishing layer sheet comprising a polishing surface; and 
 mechanically cutting the polishing surface of the polishing sheet by a groove processing tool to form concentric circular grooves having rectangle sectional shape on the polishing surface, 
 wherein a feed speed of the groove processing tool to make the grooves has a plurality of constant values and the feed speed is changed from one of the constant values to another of the constant values during forming of one of concentric circular grooves. 
 
     
     
       2. The method according to  claim 1 , wherein the cutting of the polishing surface comprises stopping feed of the groove processing tool for a certain time at the position where the groove processing tool reaches a desired depth. 
     
     
       3. The method according to  claim 1 , wherein the feed speed is changed in an ascending order of the constant values. 
     
     
       4. The method according to  claim 1 , wherein the polishing pad is formed from a foamed polyurethane.