Method for fabricating semiconductor device

Abstract

A method for fabricating a semiconductor device, comprising forming a first photoresist pattern having a hole on a first layer, forming a surface curing layer in the hole and curing the first photoresist pattern on an inner sidewall of the hole to form a first curing pattern, removing the surface curing layer, forming a second photoresist pattern in the hole and curing the second photoresist pattern that contacts with the first curing pattern to form a second curing pattern, removing the first and second photoresist patterns, and etching the first layer using the first and second curing patterns as an etch barrier.

What is claimed is: 
     
       1. A method for fabricating a semiconductor device, comprising:
 forming a first photoresist pattern having a hole on a first layer; 
 forming a surface curing layer in the hole and curing the first photoresist pattern on an inner sidewall of the hole to form a first curing pattern; 
 removing the surface curing layer; 
 forming a second photoresist pattern in the hole and curing the second photoresist pattern that contacts with the first curing pattern to form a second curing pattern; 
 removing the first and second photoresist pattern; and 
 etching the first layer using the first and second curing patterns as an etch barrier. 
 
     
     
       2. The method of  claim 1 , wherein the hole is formed by selectively exposing and developing the first photoresist pattern. 
     
     
       3. The method of  claim 1 , wherein the surface curing layer is an aqueous solution having a surface curing agent (SCA) function. 
     
     
       4. The method of  claim 1 , wherein the removing of the surface curing layer is performed through development. 
     
     
       5. The method of  claim 1 , wherein the removing of the first and second photoresist pattern is performed through exposure and development. 
     
     
       6. The method of  claim 5 , wherein the exposure is performed using a flood exposure method without a reticle. 
     
     
       7. The method of  claim 5 , wherein the widths of the first and second curing patterns are controlled by an exposure time for removing the first and second photoresist patterns. 
     
     
       8. The method of  claim 5 , further comprising performing post exposure bake (PEB) after performing the exposure for removing the first and second photoresist patterns. 
     
     
       9. The method of  claim 8 , wherein the widths of the first and second curing patterns are controlled by a temperature condition of the PEB. 
     
     
       10. The method of  claim 1 , wherein the widths of the first and second curing patterns are controlled by a temperature condition of the PEB and an exposure process for removing the first and second photoresist patterns. 
     
     
       11. The method of  claim 9 , the temperature condition of the PEB includes a temperature between 90 and 120° C. 
     
     
       12. The method of  claim 10 , the temperature condition of the PEB includes a temperature between 90 and 120° C. 
     
     
       13. The method of  claim 1 , further comprising disposing a material at a sidewall surface of the first photoresist pattern in the hole that is produced through a reaction between the first photoresist pattern and a light source used to expose the first photoresist pattern. 
     
     
       14. The method of  claim 1 , wherein a portion of the surface curing layer is absorbed in the first photoresist pattern at an inner sidewall. 
     
     
       15. The method of  claim 14 , wherein the portion of the surface curing layer absorbed in the first photoresist material at an inner sidewall is diffused in the second photoresist material when the second photoresist pattern is formed.