Substrate processing methods for reflectors

Abstract

A substrate processing method may include forming a plasma; extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; irradiating the ions at a reflector, wherein the reflector includes a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and irradiating the neutral beams onto a substrate to process the substrate.

What is claimed is: 
     
       1. A substrate processing method, comprising:
 forming a first plasma; 
 extracting preliminary ions from the first plasma and accelerating the preliminary ions to have uniform or substantially uniform directivity using a grid system; 
 irradiating the preliminary ions at a reflector, wherein the reflector comprises a plurality of reflecting plates each having a metal plate and an insulating layer stacked on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the preliminary ions; 
 colliding the preliminary ions with the reflecting plates so that a charge build-up occurs on the insulating layers, wherein the polarity of the charge build-up is the same as a polarity of the preliminary ions; 
 forming a second plasma; 
 extracting and accelerating process ions from the second plasma using the grid system; 
 emitting the process ions at the reflector; 
 reflecting the process ions incident on the reflecting plates away from the insulating layers of the reflecting plates without substantial collision; 
 colliding the process ions reflected away from the insulating layers with the metal plates to convert the process ions into neutral beams; 
 reflecting the neutral beams to have substantially a same directivity; and 
 irradiating the neutral beams onto a substrate to process the substrate. 
 
     
     
       2. The method of  claim 1 , wherein the reflecting plates are arranged obliquely, at an angle greater than or equal to about 1° and less than or equal to about 45°, relative to the ions accelerated by the grid system. 
     
     
       3. The method of  claim 1 , wherein the reflecting plates are arranged obliquely, at an angle greater than or equal to about 3° and less than or equal to about 15°, relative to the ions accelerated by the grid system. 
     
     
       4. The method of  claim 1 , wherein the metal plates are formed of iron (Fe), nickel (Ni), aluminum (Al), tantalum (Ta), molybdenum (Mo), platinum (Pt), gold (Au), tungsten (W), silicon (Si), stainless steel, or an alloy thereof. 
     
     
       5. The method of  claim 1 , wherein the insulating layers are formed of a silicon oxide layer or an oxide layer of a material forming the metal plates. 
     
     
       6. The method of  claim 1 , wherein while the charge build-up occurs on the insulating layers of the metal plates, the substrate is protected from the preliminary ions by a shutter system provided between the substrate and the reflector. 
     
     
       7. A substrate processing method, comprising:
 forming a plasma; 
 extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; 
 irradiating the ions at a reflector, wherein the reflector comprises a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; 
 reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; 
 colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and 
 irradiating the neutral beams onto a substrate to process the substrate. 
 
     
     
       8. The method of  claim 7 , wherein the metal plate is formed of iron (Fe), nickel (Ni), aluminum (Al), tantalum (Ta), molybdenum (Mo), platinum (Pt), gold (Au), tungsten (W), silicon (Si), stainless steel, or an alloy thereof. 
     
     
       9. The method of  claim 7 , wherein the insulating layers are formed of a silicon oxide layer or an oxide layer of a material forming the metal plates. 
     
     
       10. The method of  claim 7 , wherein the neutral beams have the same or substantially the same directivity as the ions incident to the insulating layers of the reflecting plates. 
     
     
       11. A substrate processing method, comprising:
 forming an ion source; 
 extracting ions from the ion source and accelerating the ions; 
 irradiating the ions at a reflector, wherein the reflector comprises a plurality of reflecting plates each having a first layer and a second layer on the first layer, wherein the reflecting plates are parallel or substantially parallel such that the second layers are exposed to the ions; 
 reflecting the ions incident on the reflecting plates away from the second layers of the reflecting plates; 
 colliding the ions reflected away from the insulating layers with the first layer to convert the ions into neutral beams, wherein the neutral beams have the same or substantially the same directivity as the ions incident to the second layers of the reflecting plates; and 
 irradiating the neutral beams onto a substrate to process the substrate. 
 
     
     
       12. The method of  claim 11 , wherein the first layers are formed of metal layers. 
     
     
       13. The method of  claim 11 , wherein the second layers are formed of an insulating layers. 
     
     
       14. The method of  claim 11 , wherein the ions are reflected in the reflector 2×n times, and
 wherein “n” is a positive integer. 
 
     
     
       15. The method of  claim 1 , wherein the reflecting plates are arranged obliquely, at an angle greater than or equal to about 3°, relative to the ions accelerated by the grid system. 
     
     
       16. The method of  claim 1 , wherein the reflecting plates are arranged obliquely, at an angle less than or equal to about 15 20  , relative to the ions accelerated by the grid system. 
     
     
       17. The method of  claim 7 , wherein the reflecting plates are arranged obliquely, at an angle greater than or equal to about 1 20  and less than or equal to about 45°, relative to the ions accelerated by the grid system. 
     
     
       18. The method of  claim 7 , wherein the reflecting plates are arranged obliquely, at an angle greater than or equal to about 3° and less than or equal to about 15°, relative to the ions accelerated by the grid system. 
     
     
       19. The method of  claim 7 , wherein the reflecting plates are arranged obliquely, at an angle greater than or equal to about 3°, relative to the ions accelerated by the grid system. 
     
     
       20. The method of  claim 7 , wherein the reflecting plates are arranged obliquely, at an angle less than or equal to about 15°, relative to the ions accelerated by the grid system.