Method of manufacturing semiconductor device

Abstract

After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising:
 irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate; 
 attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween; 
 separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween; 
 irradiating the single crystal semiconductor layer with a laser beam, so as to melt the single crystal semiconductor layer partially; 
 performing first heat treatment on the single crystal semiconductor layer by one of a diffusion furnace, a heating furnace, and a rapid thermal annealing apparatus after irradiating the single crystal semiconductor layer with the laser beam; 
 adding an impurity element imparting conductivity to the single crystal semiconductor layer to form impurity regions in the single crystal semiconductor layer after performing the first heat treatment; and 
 performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment. 
 
     
     
       2. The method of manufacturing the semiconductor device according to  claim 1 , wherein the temperature of the second heat treatment is 550° C. or higher. 
     
     
       3. The method of manufacturing the semiconductor device according to  claim 1 , wherein the temperature of the first heat treatment is 640° C. or higher and lower than a strain point of the base substrate. 
     
     
       4. The method of manufacturing the semiconductor device according to  claim 1 , wherein the impurity regions are a source region and a drain region. 
     
     
       5. The method of manufacturing the semiconductor device according to  claim 1 , wherein a glass substrate is used as the base substrate. 
     
     
       6. A method of manufacturing a semiconductor device, comprising:
 irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate; 
 attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween; 
 separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween; 
 irradiating the single crystal semiconductor layer with a laser beam, so as to melt the single crystal semiconductor layer partially; 
 performing first heat treatment on the single crystal semiconductor layer by one of a diffusion furnace, a heating furnace, and a rapid thermal annealing apparatus after irradiating the single crystal semiconductor layer with the laser beam; 
 forming a gate electrode over the single crystal semiconductor layer with a gate insulating film interposed therebetween after performing the first heat treatment; 
 adding an impurity element imparting conductivity to the single crystal semiconductor layer through the gate insulating film to form impurity regions in the single crystal semiconductor layer after forming the gate electrode; and 
 performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment. 
 
     
     
       7. The method of manufacturing the semiconductor device according to  claim 6 , wherein the temperature of the second heat treatment is 550° C. or higher. 
     
     
       8. The method of manufacturing the semiconductor device according to  claim 6 , wherein the temperature of the first heat treatment is 640° C. or higher and lower than a strain point of the base substrate. 
     
     
       9. The method of manufacturing the semiconductor device according to  claim 6 , wherein the impurity regions are a source region and a drain region. 
     
     
       10. The method of manufacturing the semiconductor device according to  claim 6 , wherein a glass substrate is used as the base substrate. 
     
     
       11. A method of manufacturing a semiconductor device, comprising:
 irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate; 
 attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween; 
 separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween; 
 irradiating the single crystal semiconductor layer with a laser beam, so as to melt the single crystal semiconductor layer partially; 
 thinning the single crystal semiconductor layer after irradiating the single crystal semiconductor layer with the laser beam; 
 performing first heat treatment on the single crystal semiconductor layer by one of a diffusion furnace, a heating furnace, and a rapid thermal annealing apparatus after thinning the single crystal semiconductor layer; 
 adding an impurity element imparting conductivity to the single crystal semiconductor layer to form impurity regions in the single crystal semiconductor layer after performing the first heat treatment; and 
 performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment. 
 
     
     
       12. The method of manufacturing the semiconductor device according to  claim 11 , wherein the temperature of the second heat treatment is 550° C. or higher. 
     
     
       13. The method of manufacturing the semiconductor device according to  claim 11 , wherein the temperature of the first heat treatment is 640° C. or higher and lower than a strain point of the base substrate. 
     
     
       14. The method of manufacturing the semiconductor device according to  claim 11 , wherein the impurity regions are a source region and a drain region. 
     
     
       15. The method of manufacturing the semiconductor device according to  claim 11 , wherein a glass substrate is used as the base substrate. 
     
     
       16. The method of manufacturing the semiconductor device according to  claim 11 , wherein the step of thinning the single crystal semiconductor layer is performed by a dry etching method or a wet etching method. 
     
     
       17. A method of manufacturing a semiconductor device, comprising:
 irradiating a single crystal semiconductor substrate with ions to form an embrittlement region at a predetermined depth from a surface of the single crystal semiconductor substrate; 
 attaching the single crystal semiconductor substrate to a base substrate with an insulating layer interposed therebetween; 
 separating the single crystal semiconductor substrate at the embrittlement region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween; 
 irradiating the single crystal semiconductor layer with a laser beam, so as to melt the single crystal semiconductor layer partially; 
 thinning the single crystal semiconductor layer after irradiating the single crystal semiconductor layer with the laser beam; 
 performing first heat treatment on the single crystal semiconductor layer by one of a diffusion furnace, a heating furnace, and a rapid thermal annealing apparatus after thinning the single crystal semiconductor layer; 
 forming a gate electrode over the single crystal semiconductor layer with a gate insulating film interposed therebetween after performing the first heat treatment; 
 adding an impurity element imparting conductivity to the single crystal semiconductor layer through the gate insulating film to form impurity regions in the single crystal semiconductor layer after forming the gate electrode; and 
 performing second heat treatment on the single crystal semiconductor layer in which the impurity regions are formed at a temperature lower than that of the first heat treatment. 
 
     
     
       18. The method of manufacturing the semiconductor device according to  claim 17 , wherein the temperature of the second heat treatment is 550° C. or higher. 
     
     
       19. The method of manufacturing the semiconductor device according to  claim 17 , wherein the temperature of the first heat treatment is 640° C. or higher and lower than a strain point of the base substrate. 
     
     
       20. The method of manufacturing the semiconductor device according to  claim 17 , wherein the impurity regions are a source region and a drain region. 
     
     
       21. The method of manufacturing the semiconductor device according to  claim 17 , wherein a glass substrate is used as the base substrate. 
     
     
       22. The method of manufacturing the semiconductor device according to  claim 17 , wherein the step of thinning the single crystal semiconductor layer is performed by a dry etching method or a wet etching method.