Chamber apparatus and extreme ultraviolet light generation system

Abstract

A chamber apparatus, which may be used with an external apparatus having an obscuration region, may include: a chamber in which EUV light is generated; a collector mirror having a first through-hole formed in a region aside from the center thereof and configured to collect the EUV light generated inside the chamber, the collector mirror being positioned such that the first through-hole is located in a region substantially corresponding to the obscuration region; and an etching gas supply unit provided in the first through-hole and configured to supply an etching gas into the chamber.

What is claimed is: 
     
       1. A chamber apparatus used with an external apparatus having an obscuration region, the chamber apparatus comprising: a chamber in which EUV light is generated;
 a collector mirror configured to collect the EUV light generated inside the chamber; 
 a first through-hole formed in a region aside from the center of the collector mirror, the first through-hole being located in a region substantially corresponding to the obscuration region; 
 a second through-hole formed in the collector mirror, through which an externally-applied laser beam travels; 
 an etching gas supply unit provided in the first through-hole and configured to supply an etching gas into the chamber, the etching gas supply unit including an outlet through which the etching gas is discharged; and 
 a magnetic field generator configured to generate a magnetic field inside the chamber, 
 wherein the outlet is oriented only toward a part of a periphery of the collector mirror located in a region near the magnetic field generator corresponding to the obscuration region. 
 
     
     
       2. The chamber apparatus according to  claim 1 , wherein
 the outlet is oriented in a direction substantially parallel to a tangent to a mirror surface of the collector mirror. 
 
     
     
       3. The chamber apparatus according to  claim 1 , wherein
 the outlet is oriented in a direction inclined with respect to a tangent to a mirror surface of the collector mirror. 
 
     
     
       4. The chamber apparatus according to  claim 1 , wherein the etching gas supply unit includes:
 a generation unit configured to generate the etching gas; and 
 a discharge unit including the outlet through which the generated etching gas is discharged. 
 
     
     
       5. The chamber apparatus according to  claim 4 , wherein:
 the etching gas supply unit is connected to a power supply and to a hydrogen gas supply device configured to supply a hydrogen gas to the generation unit, 
 the generation unit is a filament, and 
 the etching gas includes a hydrogen radical formed from the hydrogen gas excited by heating the filament with an electric power supplied from the power supply. 
 
     
     
       6. The chamber apparatus according to  claim 5 , further comprising a target supply unit configured to supply a target material into the chamber. 
     
     
       7. The chamber apparatus according to  claim 6 , wherein the target material is tin. 
     
     
       8. The chamber apparatus according to  claim 1 , further comprising:
 a slide stage configured to hold the etching gas supply unit; and 
 a support unit configured to support the slide stage to be slidable therealong, 
 wherein the slide stage is configured to be slidable along the support unit in a direction parallel to a direction into which the first through-hole is formed in the collector mirror. 
 
     
     
       9. An extreme ultraviolet light generation system, comprising:
 the chamber apparatus of  claim 1 ; 
 a laser apparatus configured to output a laser beam; and 
 an optical system configured to guide the laser beam from the laser apparatus to the chamber apparatus.