P
US9004337B2ActiveUtilityPatentIndex 47

System and method for manufacturing semiconductor device

Assignee: HONGO SATOSHIPriority: Jan 18, 2012Filed: May 24, 2012Granted: Apr 14, 2015
Est. expiryJan 18, 2032(~5.5 yrs left)· nominal 20-yr term from priority
Inventors:HONGO SATOSHITAKAHASHI KENJITANIDA KAZUMASA
H10W 10/181H10P 72/0428H10P 90/1914H01L 21/76251H01L 21/2007H01L 21/67092Y10T29/413
47
PatentIndex Score
0
Cited by
13
References
6
Claims

Abstract

According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A system for manufacturing a semiconductor device, comprising:
 a spontaneous joining unit which overlaps a first substrate and a second substrate and which spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate; and 
 a deformative joining unit which deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and which joins the mutual peripheral portions of the respective joint faces, 
 wherein the deformative joining unit includes a pressing bit to press a round peripheral portion of the first substrate or second substrate to be deformed while moving on the peripheral portion in a radial direction of the substrate in a reciprocated manner. 
 
     
     
       2. The system for manufacturing a semiconductor device according to  claim 1 ,
 wherein the deformative joining unit presses and deforms the peripheral portion of the joint face. 
 
     
     
       3. The system for manufacturing a semiconductor device according to  claim 2 ,
 wherein the deformative joining unit adjusts pressing force to deform the peripheral portion in accordance with elasticity anisotropy of the substrate to be deformed. 
 
     
     
       4. The system for manufacturing a semiconductor device according to  claim 1 ,
 wherein the deformative joining unit heats and deforms the peripheral portion of the joint face. 
 
     
     
       5. The system for manufacturing a semiconductor device according to  claim 1 ,
 wherein the spontaneous joining unit spontaneously joins the first substrate to which a backside illumination type solid-state imaging element is formed at a side of one face to be the joint face and the second substrate which becomes to a support substrate when the other face of the first substrate is to be ground; and 
 the deformative joining unit deforms the peripheral portion of the second substrate toward the peripheral portion of the first substrate. 
 
     
     
       6. The system for manufacturing a semiconductor device according to  claim 1 ,
 wherein the spontaneous joining unit includes a pressing bit to press the center portion of the overlapped first substrate or second substrate.

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