Printed circuit board and method of manufacturing the same

Abstract

Disclosed herein are a printed circuit board and a method of manufacturing the same. In detail, according to a preferred embodiment of the present invention, the printed circuit board includes: an insulating layer; and a metal layer formed on the insulating layer, wherein in the metal layer, a ratio occupied by crystal orientations of (110) and (112) is 20 to 80%. By doing so, the preferred embodiment of the present invention provides a printed circuit board including the metal layer having different crystal orientations to minimize factors of hindering electrical characteristics such as electric conductivity and improve isotropy of mechanical properties and a method of manufacturing the printed circuit board.

What is claimed is: 
     
       1. A printed circuit board, comprising:
 an insulating layer; and 
 a metal layer formed on the insulating layer, 
 wherein in the metal layer, a ratio occupied by crystal orientations of (110) and (112) is 20 to 80%. 
 
     
     
       2. The printed circuit board as set forth in  claim 1 , wherein the crystal orientations of (110) and (112) are formed in an island type. 
     
     
       3. The printed circuit board as set forth in  claim 1 , wherein the crystal orientations of (110) and (112) have a twin structure. 
     
     
       4. The printed circuit board as set forth in  claim 1 , wherein a material of the metal layer includes copper (Cu). 
     
     
       5. A method of manufacturing a printed circuit board, comprising:
 preparing an insulating layer; 
 forming a metal layer on the insulating layer; and 
 etching the metal layer by dry etching, 
 wherein in the metal layer, a ratio occupied by crystal orientations of (110) and (112) is 20 to 80%. 
 
     
     
       6. The method as set forth in  claim 5 , wherein the forming of the metal layer is performed by a deposition method. 
     
     
       7. The method as set forth in  claim 6 , wherein the deposition method is sputtering. 
     
     
       8. The method as set forth in  claim 5 , wherein the etching of the metal layer by dry etching is performed by ion beam etching. 
     
     
       9. The method as set forth in  claim 8 , wherein an ion source of the ion beam etching is gallium (Ga). 
     
     
       10. The method as set forth in  claim 5 , wherein the crystal orientations of (110) and (112) are formed in an island type. 
     
     
       11. The method as set forth in  claim 5 , wherein the crystal orientations of (110) and (112) have a twin structure. 
     
     
       12. The method as set forth in  claim 5 , wherein a material of the metal layer includes copper (Cu).