Semiconductor device including coupling conductive pattern

Abstract

A semiconductor device is disclosed including a through electrode. The semiconductor device may include a first semiconductor chip including a transceiver circuit formed on a first surface, a first coupling conductive pattern which is formed on a second surface opposite the first surface, and a through electrode which connects the transceiver circuit and the first coupling conductive pattern. There may be a transceiver located on a second semiconductor chip and including a second coupling conductive pattern facing the first coupling conductive pattern which communicates wirelessly with the first coupling conductive pattern.

What is claimed is: 
     
       1. A semiconductor device comprising:
 a first semiconductor chip comprising a transceiver circuit formed on a first surface, a first coupling conductive pattern formed on a second surface opposite the first surface, and a through electrode connecting the transceiver circuit and the first coupling conductive pattern; and 
 a transceiver located on the first semiconductor chip and comprising a second coupling conductive pattern configured to wirelessly communicate data with the first coupling conductive pattern, 
 wherein the second coupling conductive pattern is disposed to face the first coupling conductive pattern, 
 wherein the first coupling conductive pattern is a first inductor, and the second coupling conductive pattern is a second inductor, 
 wherein each of the first and second inductors comprises a field portion and a lead portion which branches from the field portion and is connected to the through electrode, 
 wherein the field portion is loop shaped, 
 wherein each of the first and second inductors further comprise a first connection portion interposed between the lead portion and the field portion and formed at a different level from the lead portion and the field portion, and electrically connecting the lead portion and the field portion. 
 
     
     
       2. The semiconductor device of  claim 1 , wherein the first semiconductor chip comprises a semiconductor substrate, and the through electrode penetrates the semiconductor substrate. 
     
     
       3. The semiconductor device of  claim 1 , wherein the field portion comprises a first sub-field portion and a second sub-field portion formed at the same level and, and each of the first and second inductors further comprise a second connection portion formed at a different level from the first and second sub-field portions and electrically connecting the first and second sub-field portions. 
     
     
       4. The semiconductor device of  claim 1 , wherein the lead portion comprises a first sub-lead portion and a second sub-lead portion connected to the field portion, and the through electrode comprises a first through electrode connected to the first sub-lead portion and a second through electrode connected to the second sub-lead portion. 
     
     
       5. The semiconductor device of  claim 1 , wherein the transceiver is a second semiconductor chip. 
     
     
       6. The semiconductor device of  claim 1 , wherein the transceiver is a printed circuit board (PCB).