Power semiconductor module

Abstract

A power semiconductor module is equipped with: a frame made of an insulator; a first electrode plate made of a metal and fixed to a bottom opening of the frame; semiconductor chips electrically and physically connected to the first electrode plate; a multilayer substrate fixed to a principal surface of the first electrode plate; wiring members that electrically connect front surface electrodes of the semiconductor chips and a circuit plate of the multilayer substrate; a second electrode plate fixed to a top opening of the frame; and a metal block that has a first surface having a projected portion and a second surface disposed on a side opposite to the first surface and that is tapered from the first surface to the second surface, the projected portion being electrically and physically connected to the circuit plate of the multilayer substrate and the second surface being electrically and physically connected to the second electrode plate.

What is claimed is: 
     
       1. A power semiconductor module, comprising:
 a frame made of an insulator and having a bottom opening and a top opening; 
 a first electrode plate made of a metal and fixed in the bottom opening in said frame; 
 a semiconductor element having a front surface electrode and a reverse surface electrode, said reverse surface electrode being electrically and physically connected to a principal surface of said first electrode plate; 
 a multilayer substrate comprising a circuit plate, an insulating plate, and a metal plate stacked together, said metal plate being fixed to the principal surface of said first electrode plate; 
 a wiring member that electrically connects the front surface electrode of said semiconductor element to the circuit plate of said multilayer substrate; 
 a second electrode plate made of a metal and fixed in the top opening in said frame; and 
 a metal block that has a first surface having a protrusion and a second surface opposite thereto and that tapers from said first surface to said second surface, said protrusion being electrically and physically connected to the circuit plate of said multilayer substrate, and said second surface of the metal block being electrically and physically connected to said second electrode plate. 
 
     
     
       2. The power semiconductor module according to  claim 1 , wherein the first surface of said metal block faces said semiconductor element with a sealing material therebetween. 
     
     
       3. The power semiconductor module according to  claim 2 , wherein the wiring member further comprises:
 a printed board having a metal film and facing said semiconductor element and said multilayer substrate; and 
 a plurality of conductive posts, one end of each of said conductive posts being electrically and physically connected to said front surface electrode of said semiconductor element or said circuit plate of said multilayer substrate, and another end of each of said conductive posts being electrically and physically connected to said metal film of said printed board. 
 
     
     
       4. The power semiconductor module according to  claim 3 , wherein the sealing material is made of a thermosetting hard resin, a height of said sealing material being 1 to 3 mm from a top end of said printed board and said conductive posts. 
     
     
       5. The power semiconductor module according to  claim 1 , wherein said metal block has a conical frustum shape. 
     
     
       6. The power semiconductor module according to  claim 1 , wherein said metal block is formed by combining a plurality of conical frustum shapes. 
     
     
       7. The power semiconductor module according to  claim 1 , wherein said first electrode plate has a recess in the principal surface and said multilayer substrate is disposed in said recess. 
     
     
       8. The power semiconductor module according to  claim 1 , wherein said first electrode plate and said second electrode plate have protrusions that project outward. 
     
     
       9. The power semiconductor module according to  claim 1 , wherein said frame has recesses and protrusions on an outer surface thereof. 
     
     
       10. The power semiconductor module according to  claim 1 , wherein said semiconductor element is made of silicon carbide. 
     
     
       11. The power semiconductor module according to  claim 1 , wherein said semiconductor element is a diode.