Semiconductor memory device

Abstract

A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.

What is claimed is: 
     
       1. A semiconductor memory device comprising:
 a semiconductor layer; 
 a control gate electrode; and 
 an organic molecular layer provided between the semiconductor layer and the control gate electrode, the organic molecular layer having an organic molecule including a molecular structure described by a molecular formula (1): 
 
       
         
           
           
               
               
           
         
       
       wherein X a  is an aryl group having a substituent selected from a nitro group, an amino group, a tosyl group, an alkylamino group, a cyano group, and a fluoro group, Y a  is an aryl group different from X a , Ar is an aryl group different from X a , and M is a metal ion selected from Zn, Fe, Mn, Pt, Ni, and Co. 
     
     
       2. The device according to  claim 1 , wherein Y a  has a substituent chemically bonded to a semiconductor layer side or a control gate electrode side. 
     
     
       3. The device according to  claim 1 , wherein X a , Ar, and Y a  in the molecular formula (1) include a phenyl group. 
     
     
       4. The device according to  claim 1 , wherein Ar in the molecular formula (1) is an aryl group composed only of carbon and hydrogen. 
     
     
       5. The device according to  claim 1 , wherein the organic molecular layer is a monomolecular film. 
     
     
       6. The device according to  claim 1 , wherein the organic molecule includes a molecular structure described by a molecular formula (2): 
       
         
           
           
               
               
           
         
       
       wherein X b  is a substituent selected from a nitro group, an amino group, a tosyl group, an alkylamino group, a cyano group, and a fluoro group, Y b  is a substituent chemically bonded to a semiconductor layer side or a control gate electrode side, M is a metal ion selected from Zn, Fe, Mn, Pt, Ni, and Co, and R is a saturated aliphatic group. 
     
     
       7. The device according to  claim 6 , wherein R in the molecular formula (2) has an ether linkage. 
     
     
       8. The device according to  claim 1 , wherein the organic molecule includes a molecular structure described by a molecular formula (3): 
       
         
           
           
               
               
           
         
       
       wherein Y c  is a substituent chemically bonded to a semiconductor layer side or a control gate electrode side, and n is an integer of one or more to thirty or less. 
     
     
       9. The device according to  claim 1 , wherein the organic molecule includes a molecular structure described by a molecular formula (4): 
       
         
           
           
               
               
           
         
       
     
     
       10. The device according to  claim 1 , further comprising a block insulating film provided between the control gate electrode and the organic molecular layer. 
     
     
       11. The device according to  claim 1 , further comprising a tunnel insulating film provided between the semiconductor layer and the organic molecular layer. 
     
     
       12. The device according to  claim 10 , wherein the block insulating film has at least one oxide film selected from a hafnium oxide, an aluminum oxide, a silicon oxide, a zirconium oxide, and a titanium oxide. 
     
     
       13. The device according to  claim 11 , wherein the tunnel insulating film is a silicon oxide film. 
     
     
       14. A semiconductor memory device comprising:
 a stacked body having insulating layers and control gate electrodes alternately stacked; 
 a semiconductor layer provided in the stacked body, the semiconductor layer facing the control gate electrodes; and 
 an organic molecular layer provided between the semiconductor layer and one of the control gate electrodes, the organic molecular layer having an organic molecule including a molecular structure described by a molecular formula (1): 
 
       
         
           
           
               
               
           
         
       
       wherein X a  is an aryl group having a substituent selected from a nitro group, an amino group, a tosyl group, an alkylamino group, a cyano group, and a fluoro group, Y a  is an aryl group different from X a , Ar is an aryl group different from X a , and M is a metal ion selected from Zn, Fe, Mn, Pt, Ni, and Co. 
     
     
       15. The device according to  claim 14 , wherein Y a  has a substituent chemically bonded to a semiconductor layer side or a control gate electrodes side. 
     
     
       16. The device according to  claim 14 , wherein X a , Ar, and Y a  in the molecular formula (1) include a phenyl group. 
     
     
       17. The device according to  claim 14 , wherein Ar in the molecular formula (1) is an aryl group composed only of carbon and hydrogen. 
     
     
       18. The device according to  claim 14 , wherein the organic molecular layer is a monomolecular film. 
     
     
       19. The device according to  claim 14 , wherein the organic molecule includes a molecular structure described by a molecular formula (2): 
       
         
           
           
               
               
           
         
       
       wherein X b  is a substituent selected from a nitro group, an amino group, a tosyl group, an alkylamino group, a cyano group, and a fluoro group, Y b  is a substituent chemically bonded to a semiconductor layer side or a control gate electrode side, M is a metal ion selected from Zn, Fe, Mn, Pt, Ni, and Co, and R is a saturated aliphatic group. 
     
     
       20. The device according to  claim 19 , wherein R in the molecular formula (2) has an ether linkage.