Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process

Abstract

A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point of silver, and therefore the finished package can withstand temperatures significantly higher than the manufacturing temperature. Further, since the silver is an interfacial material between the various combined materials, the effect of differing material properties between ceramic, organic, and metallic components, such as coefficient of thermal expansion, is reduced due to low temperature of bonding and the ductility of the silver.

What is claimed is: 
     
       1. A semiconductor device package comprising:
 a first material portion of the semiconductor device package, wherein the first material comprises one of a ceramic or an organic material, wherein the first material portion comprises a printed circuit board; 
 a second material portion of the semiconductor device package, wherein the second material comprises a metallic slug; and 
 a sintered silver region disposed to couple the first and second material portions of the semiconductor device package, wherein
 the sintered silver region is disposed within a hole formed in the printed circuit board, and 
 the second material portion is disposed within the sintered silver region. 
 
 
     
     
       2. The semiconductor device package of  claim 1  further comprising:
 a semiconductor device die thermally coupled to the metallic slug, wherein the metallic slug comprises copper. 
 
     
     
       3. The semiconductor device package of  claim 1  further comprising:
 a second metallic slug disposed within the sintered silver, wherein the sintered silver thermally and electrically couples the metallic slug and the second metallic slug. 
 
     
     
       4. A semiconductor device package comprising:
 a first material portion of the semiconductor device package, wherein the first material comprises one of a ceramic or an organic material, wherein the first material portion comprises a printed circuit board; 
 a second material portion of the semiconductor device package, wherein the second material portion comprises a passive electronic device disposed within the sintered silver region, wherein the sintered silver electrically couples the passive electronic device to an interconnect formed on the printed circuit board; 
 a sintered silver region disposed to couple the first and second material portions of the semiconductor device package, wherein
 the sintered silver region is disposed within a hole formed in the printed circuit board, and 
 the second material portion is disposed within the sintered silver region. 
 
 
     
     
       5. The semiconductor device package of  claim 4 , wherein the passive semiconductor device comprises a high capacitance material.