Resist underlayer film-forming composition which contains alicyclic skeleton-containing carbazole resin

Abstract

There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.1 2,5 .1 7,10 ]dodeca-3,8-diene, or substituted tetracyclo[4.4.0.1 2,5 .1 7,10 ]dodeca-3,8-diene.

The invention claimed is: 
     
       1. A resist underlayer film-forming composition comprising:
 a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound; wherein
 the polymer is a polymer containing a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), or a combination of the unit structures of Formulae (1), (2), and (3): 
 
 
       
         
           
           
               
               
           
         
         where
 R 1  to R 14  are each a substituent of a hydrogen atom and are each independently a halogen group, a nitro group, an amino group, a hydroxy group, or a C 1-10  alkyl group for which the groups are optionally substituted or a C 6-40  aryl group for which the groups are optionally substituted; 
 each of n 1 , n 2 , n 5 , n 6 , n 9 , n 10 , n 13 , n 14 , and n 15  is an integer of 0 to 3; 
 each of n 3 , n 4 , n 7 , n 8 , n 11 , and n 12  is an integer of 0 to 4; and 
 in Formula (3) Ar is a phenyl group or a naphthyl group. 
 
       
     
     
       2. The resist underlayer film-forming composition according to  claim 1 , further comprising a cross-linking agent. 
     
     
       3. The resist underlayer film-forming composition according to  claim 1 , further comprising an acid and/or an acid generator. 
     
     
       4. A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in  claim 1  onto a semiconductor substrate and baking the resist underlayer film-forming composition. 
     
     
       5. A method for forming a resist pattern used in production of a semiconductor, the method comprising:
 applying the resist underlayer film-forming composition as claimed in  claim 1  onto a semiconductor substrate and baking the resist underlayer film-forming composition to form a resist underlayer film, 
 forming a resist film on the resist underlayer film, and 
 forming a resist pattern by irradiation with light or electron beams and development. 
 
     
     
       6. A production method of a semiconductor device, the production method comprising:
 forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition as claimed in  claim 1 ; 
 forming a resist film on the underlayer film; 
 forming a resist pattern in the resist film by irradiation with light or electron beams and development; 
 etching the underlayer film using the resist pattern; and 
 fabricating the semiconductor substrate using the underlayer film thus patterned. 
 
     
     
       7. A production method of a semiconductor device, the production method comprising:
 forming an underlayer film on a semiconductor substrate using the resist underlayer film-forming composition as claimed in  claim 1 ; 
 forming a hard mask on the underlayer film; 
 further forming a resist film on the hard mask; 
 forming a resist pattern in the resist film by irradiation with light or electron beams and development; 
 etching the hard mask using the resist pattern; 
 etching the underlayer film using the hard mask thus patterned; and 
 fabricating the semiconductor substrate using the underlayer film thus patterned. 
 
     
     
       8. The production method according to  claim 7 , wherein the hard mask is formed by application of an inorganic substance solution or deposition of an inorganic substance.