Method of making demountable interconnect structure

Abstract

A method for making an interconnect structure includes applying a first metal layer to an electronic device, wherein the electronic device comprises at least one I/O contact and the first metal layer is located on a surface of the I/O contact; applying a removable layer to the electronic device. The removable layer is adjacent to the first metal layer. An adhesive layer is applied to the electronic device or to a base insulative layer. The electronic device is secured to the base insulative layer using the adhesive layer. The first metal layer and removable layer are disposed between the electronic device and the base insulative layer.

What is claimed is: 
     
       1. A method for making an interconnect structure, comprising:
 applying a first metal layer to an electronic device, wherein the electronic device comprises at least one I/O contact and the first metal layer is located on a surface of the I/O contact; 
 applying a removable layer to the electronic device, wherein the removable layer is located adjacent to the first metal layer; 
 applying an adhesive layer to the electronic device or to a base insulative layer, wherein the application of the adhesive layer is separate from the application of the removable layer such that the adhesive layer is a separate layer from the removable layer; and 
 securing the electronic device to the base insulative layer using the adhesive layer, with the adhesive layer being positioned between the removable layer and the base insulative layer so as to bond the removable layer to the base insulative layer; 
 wherein the first metal layer and removable layer are disposed between the electronic device and the base insulative layer; 
 wherein the removable layer and first metal layer allow the electronic device to be retrieved from the base insulative layer without damaging the electronic device, without damaging the base insulative layer, or without damaging both the electronic device and the base insulative layer; and 
 wherein the removable layer and first metal layer allow the at least one I/O contact to be exposed when the electronic device is retrieved from the base insulative layer. 
 
     
     
       2. The method of  claim 1 , wherein a perimeter of the first metal layer substantially corresponds to a perimeter of the I/O contact. 
     
     
       3. The method of  claim 1 , wherein said applying an adhesive layer comprises spin coating, spray coating, or jetting. 
     
     
       4. The method of  claim 1 , wherein said applying an adhesive layer comprises roller coating, meniscus coating, pattern print depositing, screen printing, stenciling, or dry film laminating. 
     
     
       5. The method of  claim 1 , wherein said securing the electronic device further comprises partially curing the adhesive layer. 
     
     
       6. The method of  claim 1 , further comprising placing the electronic device onto the base insulative layer, wherein the first metal layer, removable layer and the adhesive layer are disposed between the electronic device and the base insulative layer. 
     
     
       7. The method of  claim 6 , further comprising curing the adhesive layer. 
     
     
       8. The method of  claim 1 , wherein said applying a removable layer comprises spin coating, spray coating, or jetting. 
     
     
       9. The method of  claim 1 , wherein said applying a removable layer comprises roller coating, meniscus coating, pattern print depositing, screen printing, stenciling, or dry film laminating. 
     
     
       10. The method of  claim 1 , wherein said applying a first metal layer comprises lead, silver, tin, arsenic, platinum, copper, lanthanum, sodium, phosphorus or a combination of two or more thereof. 
     
     
       11. The method of  claim 1 , further comprising applying a barrier coating on a surface of the first metal layer and removable layer. 
     
     
       12. The method of  claim 11 , wherein said applying a barrier coating comprises spin coating, spray coating, roller coating, meniscus coating, stencil coating, screen printing, pattern print depositing, jetting or dry film laminating. 
     
     
       13. The method of  claim 11 , wherein said applying a barrier coating comprises chemical vapor depositing, plasma depositing, or reactive sputtering. 
     
     
       14. The method of  claim 1 , further comprising applying a passivation layer to a surface of the electronic device, wherein the passivation layer is disposed between the removable layer and the electronic device. 
     
     
       15. The method of  claim 1 , further comprising electrically connecting the I/O contact on the electronic device to an electrical conductor located on the base insulative layer. 
     
     
       16. The method of  claim 15 , wherein said electrically connecting comprises reflowing solder to electrically connect the electronic device to the base insulative layer. 
     
     
       17. The method of  claim 16 , wherein the adhesive layer is an underfill. 
     
     
       18. The method of  claim 15 , wherein said electrically connecting comprises:
 forming a via extending through the base insulative layer and through the adhesive layer, so that the via extends from a first surface of the base insulative layer to the first metal layer located on an I/O contact, wherein the I/O contact is located on a first surface of the electronic device; and 
 depositing an electrically conductive material within at least a portion of the via, the electrically conducting material extending through the via to the first metal layer on the electronic device. 
 
     
     
       19. The method of  claim 18 , wherein said forming a via comprises laser ablating, wet chemical etching, plasma etching, or reactive ion etching. 
     
     
       20. The method of  claim 18 , wherein said forming a via further comprises mechanical drilling or punching. 
     
     
       21. The method of  claim 1 , further comprising securing the base insulative layer having the electronic device secured thereto to a frame panel having an aperture configured to receive the electronic device. 
     
     
       22. The method of  claim 21 , further comprising encapsulating the base insulative layer to partially embed the base insulative layer and the electronic device. 
     
     
       23. The method of  claim 1 , further comprising encapsulating the base insulative layer to fully embed the base insulative layer and the electronic device. 
     
     
       24. The method of  claim 1 , wherein the removable layer and first metal layer each have a melting point or softening point temperature that is lower than a maximum damage threshold temperature of the electronic device, and the method further comprising:
 exposing the removable layer and first metal layer to a temperature higher than their melting or softening points but lower than the maximum damage threshold temperature of the electronic device; and 
 removing the electronic device from the base insulative layer. 
 
     
     
       25. The method of  claim 24 , wherein the removable layer and first metal layer are exposed to a temperature between approximately 250 degrees Celsius and approximately 350 degrees Celsius. 
     
     
       26. The method of  claim 1 , wherein the removable layer and first metal layer each have a melting point or softening point temperature that is lower than a maximum damage threshold temperature of the base insulative layer, and the method further comprising:
 exposing the removable layer and first metal layer to a temperature higher than their melting or softening points but lower than the maximum damage threshold temperature of the base insulative layer; and 
 removing the electronic device from the base insulative layer. 
 
     
     
       27. The method of  claim 26 , wherein the removable layer and first metal layer are exposed to a temperature between approximately 250 degrees Celsius and approximately 350 degrees Celsius. 
     
     
       28. The method of  claim 1 , further comprising:
 providing an additional insulative layer; 
 securing the additional insulative layer to a surface of the base insulative layer opposite the electronic device; and 
 electrically connecting an electrical conductor on the additional insulative layer to an electrical conductor on the base insulative layer. 
 
     
     
       29. The method of  claim 1 , wherein:
 said applying a first metal layer comprises applying the first metal layer to a first surface of the electronic device; 
 said applying a removable layer comprises applying the removable layer to the first surface of the electronic device; and 
 said applying an adhesive layer comprises applying the adhesive layer to a second surface of the base insulative layer; and 
 the method further comprises contacting the adhesive layer with the first metal layer and removable layer. 
 
     
     
       30. The method of  claim 1 , wherein:
 said applying a first metal layer comprises applying the first metal layer to a first surface of the electronic device; 
 said applying a removable layer comprises applying the removable layer to the first surface of the electronic device; and 
 said applying an adhesive layer comprises applying the adhesive layer to a surface of the first metal layer and to a surface of the removable layer subsequent to the application of the first metal layer and removable layer to the electronic device; 
 and the method further comprises contacting the adhesive layer to a second surface of the base insulative layer. 
 
     
     
       31. The method of  claim 1 , further comprising applying a second metal layer to a surface of the first metal layer, wherein the second metal layer is located adjacent to the removable layer. 
     
     
       32. The method of  claim 31 , wherein the removable layer, first metal layer, and second metal layer allow the electronic device to be retrieved from the base insulative layer without damaging the electronic device, without damaging the base insulative layer, or with damaging both the electronic device and the base insulative layer. 
     
     
       33. The method of  claim 31 , wherein the removable layer, first metal layer, and/or second metal layer each have a melting point or softening point temperature that is lower than a maximum damage threshold temperature of the electronic device, and the method further comprising:
 exposing the removable layer, first metal layer and/or second metal layer to a temperature higher than their melting or softening points but lower than the maximum damage threshold temperature of the electronic device; and 
 removing the electronic device from the base insulative layer. 
 
     
     
       34. The method of  claim 31 , wherein the removable layer, first metal layer and/or second metal layer each have a melting point or softening point temperature that is lower than a maximum damage threshold temperature of the base insulative layer, and the method further comprising:
 exposing the removable layer, first metal layer and/or second metal layer to a temperature higher than their melting or softening points but lower than the maximum damage threshold temperature of the base insulative layer; and 
 removing the electronic device from the base insulative layer. 
 
     
     
       35. The method of  claim 31 , wherein the second metal layer comprises lead, copper, silver, cadmium, tin, thallium, or zinc, or a combination of two or more thereof. 
     
     
       36. The method of  claim 1  wherein the applied first metal layer is a separate feature from a solder material used to join the interconnect structure to a printed circuit board. 
     
     
       37. A method for making an interconnect structure, comprising:
 applying a first metal layer to an electronic device, wherein the electronic device comprises at least one I/O contact and the first metal layer is located on a surface of the I/O contact; 
 applying a removable layer to the electronic device, wherein the removable layer is located adjacent to the first metal layer; 
 applying an adhesive layer to the electronic device or to a base insulative layer; and 
 securing the electronic device to the base insulative layer using the adhesive layer, with a first surface of the adhesive layer being bonded to the removable layer and a second surface of the adhesive layer being bonded to the base insulative layer; 
 wherein the adhesive layer comprises a first material and the removable layer comprises a second material different from the first material; 
 wherein the first metal layer and removable layer are disposed between the electronic device and the base insulative layer; and 
 wherein the removable layer and first metal layer each have a melting point or softening point temperature that is lower than a maximum damage threshold temperature of the electronic device, such that the removable layer and first metal layer can be removed so as to allow the electronic device to be retrieved from the base insulative layer without damaging the electronic device, without damaging the base insulative layer, or without damaging both the electronic device and the base insulative layer. 
 
     
     
       38. The method of  claim 37  wherein the at least one I/O contact of the electronic device is exposed upon retrieval of the electronic device from the base insulative layer.