Probe configuration and method of fabrication thereof

Abstract

The disclosed technology relates generally to probe configurations, and more particularly to probe configurations and methods of making probe configurations that have a diamond body and a diamond layer covering at least an apex region of the diamond body. In one aspect, a method of fabricating a probe configuration includes forming a probe tip. Forming the probe tip includes providing a substrate and forming a recessed mold into the substrate on a first side of the substrate, wherein the recessed mold is shaped to form a probe body having an apex region. Forming the probe tip additionally includes forming a first diamond layer on the substrate on the first side, wherein forming the first diamond layer includes at least partially filling the recessed mold with the first diamond layer such that a probe body having an apex region is formed in the recessed mold. Forming the probe tip additionally includes patterning to remove at least partially the first diamond layer which surrounds the probe body, removing a substrate material surrounding at least the apex region of the probe body, and forming a second diamond layer covering at least the apex region of the probe body. The method additionally includes attaching the probe tip to a first end of a cantilever and attaching the second end of the cantilever to a holder.

What is claimed is: 
     
       1. A method of fabricating a probe configuration, comprising:
 forming a probe tip, comprising:
 providing a substrate, 
 forming a recessed mold into the substrate on a first side of the substrate, the recessed mold shaped to form a probe body having an apex region, 
 forming a first diamond layer on the substrate on the first side, wherein forming the first diamond layer includes at least partially filling the recessed mold with the first diamond layer such that a probe body having an apex region is formed in the recessed mold, 
 patterning to at least partly remove the first diamond layer surrounding the probe body, 
 removing a substrate material surrounding at least the apex region of the probe body, and 
 
 forming a second diamond layer covering at least the apex region of the probe body; 
 attaching the probe tip to a first end of a cantilever; and 
 attaching a second end of the cantilever to a holder. 
 
     
     
       2. The method of  claim 1 , wherein patterning to at least partly remove the first diamond layer includes forming a cavity extending through the first diamond layer and partly surrounding the probe body, thereby exposing the substrate underlying the cavity. 
     
     
       3. The method of  claim 2 , wherein removing the substrate material includes removing the substrate material from the exposed substrate through the cavity via a wet etch process, thereby further extending the cavity into the substrate to surround the apex region of the probe body. 
     
     
       4. The method of  claim 3 , wherein forming the second diamond layer includes depositing the second diamond layer from the first side of the substrate though the cavity onto the apex region of the probe body. 
     
     
       5. The method of  claim 1 , wherein patterning to at least partly remove the first diamond layer includes removing the first diamond layer surrounding the probe body to form an island of the first diamond layer. 
     
     
       6. The method of  claim 5 , wherein removing the substrate material includes removing the substrate material though a cavity formed from a second side of the substrate opposite the first side, wherein the cavity is formed using a wet etch process and extends through the substrate to expose the apex region of the probe body. 
     
     
       7. The method of  claim 6 , wherein forming the second diamond layer includes depositing the second diamond layer from the second side of the substrate though the cavity onto the apex region of the probe body. 
     
     
       8. The method of  claim 1 , wherein the first diamond layer and the second diamond layer have average grain sizes or electrical conductivities that are different by at least 1%.