Semiconductor device manufacturing method using a multilayer resist

Abstract

To improve the manufacturing yield of a semiconductor device, there is to provide a method of manufacturing a semiconductor device using a multilayer resist, in which before performing water repelling processing for immersion exposure on a wafer, an anti-reflection film, an underlayer film, and an intermediate film applied to a wafer edge portion are eliminated through rinse processing.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device comprising the following steps of:
 (a) preparing a semiconductor wafer comprised of a top surface, a rear surface opposite to the top surface, and a lateral surface between the top surface and the rear surface; 
 (b) forming a target film on the top surface of the semiconductor wafer; 
 (c) applying a first insulating layer that is a first mask film on the top surface and the lateral surface of the semiconductor wafer to cover the target film; 
 (d) eliminating a part of the first insulating layer formed on the lateral surface of the semiconductor wafer, by cleaning the semiconductor wafer; 
 (e) performing water repelling processing on the first insulating layer, after the step (d); 
 (f) applying a second insulating layer that is a second mask film on the semiconductor wafer, after the step (e); 
 (g) transferring a predetermined pattern to the second insulating layer according to photolithography, to form the second mask film; 
 (h) transferring the pattern of the second mask film to the first insulating layer, to form the first mask film; and 
 (i) etching the target film, using the first mask film. 
 
     
     
       2. The method according to  claim 1 ,
 wherein the first insulating layer is a composite film including at least two layers of an underlayer film and an intermediate layer film. 
 
     
     
       3. The method according to  claim 2 ,
 wherein the intermediate layer film includes a silicon component. 
 
     
     
       4. The method according to  claim 1 ,
 wherein the first insulating layer is a light absorption film. 
 
     
     
       5. The method according to  claim 1 ,
 wherein immersion exposure is used for the photolithography in the step (g). 
 
     
     
       6. The method according to  claim 1 ,
 wherein the water repelling processing is HMDS processing according to a gas phase introduction method. 
 
     
     
       7. The method according to  claim 1 ,
 between the step (e) and the step (f), further including the following steps of: 
 (j) applying a third insulating layer that is a third mask film on the semiconductor wafer; and 
 (k) eliminating a part of the third insulating layer formed on the lateral surface of the semiconductor wafer, by cleaning the semiconductor wafer. 
 
     
     
       8. The method according to  claim 7 ,
 wherein the third insulating layer includes a silicon component. 
 
     
     
       9. A method of manufacturing a semiconductor device comprising the following steps of:
 (a) preparing a semiconductor wafer comprised of a top surface, a rear surface opposite to the top surface, and a lateral surface between the top surface and the rear surface; 
 (b) forming a target film on the top surface of the semiconductor wafer; 
 (c) applying a first insulating layer on the top surface and the lateral surface of the semiconductor wafer to cover the target film; 
 (d) eliminating a part of the first insulating layer applied on the lateral surface of the semiconductor wafer by cleaning; 
 (e) performing water repelling processing on the first insulating layer, after the step (d); 
 (f) applying a second insulating layer on the semiconductor wafer, after the step (e); 
 (g) transferring a predetermined pattern to the second insulating layer according to photolithography to form a mask film; and 
 (h) etching the first insulating layer and the target film using the mask film. 
 
     
     
       10. The method according to  claim 9 ,
 wherein the first insulating layer is a light absorption BARC film. 
 
     
     
       11. The method according to  claim 9 ,
 wherein immersion exposure is used for the photolithography in the step (g). 
 
     
     
       12. The method according to  claim 9 ,
 wherein the water repelling processing is HMDS processing according to a gas phase introduction method.