Metrology pattern layout and method of use thereof

Abstract

A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.

What is claimed is: 
     
       1. A method comprising:
 facilitating arrangement of a plurality of metrology patterns for a metrology pattern layout for a circuit structure comprising a plurality of quadrants:
 arranging a first quadrant for a first wafer measurement pattern that includes a plurality of structural elements containing measurement data for the first wafer; 
 arranging a second quadrant for a second wafer measurement pattern that includes a plurality of structural elements containing measurement data for the second wafer; 
 arranging a third quadrant for a reticle registration pattern that includes a plurality of structural elements containing registration data for the reticle; 
 arranging a fourth quadrant for a reticle measurement pattern that includes a plurality of structural elements containing measurement data for the reticle; 
 disposing a cross-shaped scribe area adjacent to one or more of the plurality of quadrants, the scribe area facilitating arrangement of one or more additional metrology patterns, the scribe area further comprising a center area, the center area comprising a pattern recognition metrology pattern, a double-patterning overlay metrology pattern, or a combination thereof, the scribe area being centrally disposed within the pattern layout, and wherein the scribe area separates the plurality of quadrants; 
 
 and
 correlating data obtained from the first and second wafer measurement patterns with data obtained from the reticle measurement pattern and the reticle registration pattern. 
 
 
     
     
       2. The method of  claim 1 , wherein the first quadrant is arranged diagonally with respect to the second quadrant and the third quadrant is arranged diagonally with respect to the fourth quadrant. 
     
     
       3. The method of  claim 1 , wherein arranging the first quadrant isolates the reticle registration pattern from the others of the plurality of metrology patterns, such that distortion of the reticle registration pattern is minimized when scanned by a metrology tool. 
     
     
       4. The method of  claim 1 , wherein the fourth quadrant comprises the reticle measurement pattern, the reticle measurement pattern comprising a plurality of structural elements, wherein at least one structural element is an at least one outermost structural element, the at least one outermost structural element being designed to protect the plurality of structural elements from modification in an optical proximity correction process. 
     
     
       5. The method of  claim 4 , wherein the at least one outermost structural element has at least one size dimension larger than a pre-defined critical dimension for the reticle. 
     
     
       6. The method of  claim 5 , wherein the at least one size dimension is approximately two times larger than the pre-defined critical dimension for the reticle. 
     
     
       7. The method of  claim 4 , wherein the at least one outermost structural element is one outermost structural element of a plurality of outermost structural elements. 
     
     
       8. The method of  claim 1 , comprising arranging two metrology patterns for the at least one of the plurality of quadrants further facilitates arrangement of two metrology patterns, wherein the first metrology pattern corresponds to a first exposure layer of a double patterning process and the second metrology pattern corresponds to a second exposure layer of the double patterning process, the two metrology patterns facilitating overlay metrology for the double patterning process. 
     
     
       9. The method of  claim 8 , wherein the fourth quadrant comprises a first reticle measurement pattern and a second reticle measurement pattern, the first reticle measurement pattern comprising a plurality of first structural elements with at least one first outermost structural element, the at least one first outermost structural element being designed to protect the plurality of first structural elements from modification in an optical proximity correction process, and the second reticle measurement pattern comprising a plurality of second structural elements with at least one second outermost structural element, the at least one second outermost structural element being designed to protect the plurality of second structural elements from modification in an optical proximity correction process. 
     
     
       10. The method of  claim 1 , wherein the metrology pattern layout is a first metrology pattern layout designed for a first metal layer of a circuit structure design, and wherein the first metrology pattern layout may be rotated by 90° to provide a second metrology pattern layout for a second metal layer of the circuit structure design. 
     
     
       11. The method of  claim 1 , wherein the scribe area is a square-shaped scribe area, the square-shaped scribe area forming, at least in part, a border of the pattern layout, and wherein the plurality of quadrants are disposed within the square-shaped scribe area. 
     
     
       12. The method of  claim 1 , wherein the one or more additional metrology patterns are one or more double-patterning overlay metrology patterns. 
     
     
       13. The method of  claim 1 , wherein the one or more additional metrology patterns are one or more metal layer overlay metrology patterns. 
     
     
       14. The method of  claim 1 , wherein the one or more additional metrology patterns are one or more via layer metrology patterns. 
     
     
       15. The method of  claim 1 , wherein the metrology pattern layout comprises a defined surface area, the defined surface area comprising a surface area of the plurality of quadrants and the scribe area, the defined surface area facilitating placement of the structure within an active region of a reticle pattern or within an active region of a wafer pattern. 
     
     
       16. The method of  claim 15 , wherein the surface area is less than about 25 μm 2 . 
     
     
       17. A method comprising:
 facilitating arrangement of a plurality of metrology patterns for a metrology pattern layout for a circuit structure comprising a plurality of quadrants:
 arranging a first quadrant for a first wafer measurement pattern that includes a plurality of structural elements containing measurement data for the first wafer; 
 arranging a second quadrant for a second wafer measurement pattern that includes a plurality of structural elements containing measurement data for the second wafer; 
 arranging a third quadrant for a reticle registration pattern that includes a plurality of structural elements containing registration data for the reticle; 
 arranging a fourth quadrant for a reticle measurement pattern that includes a plurality of structural elements containing measurement data for the reticle; 
 correlating data obtained from the first and second wafer measurement patterns with data obtained from the reticle measurement pattern and the reticle registration pattern; 
 arranging two metrology patterns for the at least one of the plurality of quadrants further facilitates arrangement of two metrology patterns, wherein the first metrology pattern corresponds to a first exposure layer of a double patterning process and the second metrology pattern corresponds to a second exposure layer of the double patterning process, the two metrology patterns facilitating overlay metrology for the double patterning process; and 
 wherein the fourth quadrant comprises a first reticle measurement pattern and a second reticle measurement pattern, the first reticle measurement pattern comprising a plurality of first structural elements with at least one first outermost structural element, the at least one first outermost structural element being designed to protect the plurality of first structural elements from modification in an optical proximity correction process, and the second reticle measurement pattern comprising a plurality of second structural elements with at least one second outermost structural element, the at least one second outermost structural element being designed to protect the plurality of second structural elements from modification in an optical proximity correction process. 
 
 
     
     
       18. The method of  claim 17 , wherein the metrology pattern layout further comprises a scribe area adjacent to one or more of the plurality of quadrants, the scribe area facilitating arrangement of one or more additional metrology patterns. 
     
     
       19. The method of  claim 18 , wherein the scribe area comprises a cross-shaped scribe area, the cross-shaped scribe area being centrally disposed within the pattern layout, and wherein the scribe area separates the plurality of quadrants. 
     
     
       20. The method of  claim 19 , wherein the cross-shaped scribe area further comprises a center area, the center area comprising a pattern recognition metrology pattern, a double-patterning overlay metrology pattern, or a combination thereof.