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Grounded electrode for a plasma processing apparatus

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Assignee: HITACHI HIGH TECH CORPPriority: Mar 19, 2019Filed: Sep 18, 2019Granted: Apr 13, 2021
Est. expiryMar 19, 2039(~12.7 yrs left)· nominal 20-yr term from priority
Inventors:Taku Watanabe
58
PatentIndex Score
6
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11
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1
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Claims

exact text as granted — not AI-modified
CLAIM 
     
       The ornamental design for a grounded electrode for a plasma processing apparatus, as shown and described.

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