Reactor and method of processing a semiconductor substrate

Abstract

A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables. A method of processing a semiconductor substrate includes supporting the substrate in a sealed processing chamber. The substrate is rotated and heated in the processing chamber in which at least one reactant gas is injected. A photon density sensor for measuring the temperature of the substrate is positioned in the processing chamber and is first directed to a light, which is provided in the chamber for measuring the incident photon density from the light and then repositioned to direct the photon density sensor to the substrate to measure the reflection of the light off the substrate. The incident photon density is compared to the reflected light to calculate the substrate temperature.

We claim:  
     
       1. A reactor for processing a substrate, said reactor comprising: 
       a housing defining a processing chamber;  
       a light source supported in said housing;  
       a heater positioned in said housing, said heater being adapted to heat the substrate;  
       at least one gas injector adapted to inject at least one gas into said processing chamber onto a discrete area of the substrate; and  
       a photon density sensor extending into said housing, said photon density sensor being adapted to measure the emissivity of the substrate and to move between a first position wherein said photon density sensor is directed to said light source and a second position wherein said photon density sensor is positioned for directing toward the substrate.  
     
     
       2. The reactor according to  claim 1 , further comprising first and second communication cables, said first communication cable including said photon density sensor and being in communication with said second cable and being adapted to send signals from said photon density sensor to a processor. 
     
     
       3. The reactor according to  claim 2 , wherein said first and second communications cable comprise optical communication cables. 
     
     
       4. The reactor according to  claim 3 , wherein said first communication cable comprises a sapphire optical communication cable. 
     
     
       5. The reactor according to  claim 3 , wherein said second communication cable comprises a quartz optical communication cable. 
     
     
       6. The reactor according to  claim 3 , wherein said first and second communications cables are interconnected by a slip connection. 
     
     
       7. The reactor according to  claim 6 , wherein said first communication cable is rotated between said first and second positions by a driver. 
     
     
       8. The reactor according to  claim 7 , wherein said driver comprises a motor. 
     
     
       9. The reactor according to  claim 7 , wherein at least a portion of said first communication cable is housed in a rigid member, said driver drivingly engaging said rigid member to rotate said communication cable between said first position and said second position. 
     
     
       10. The reactor according to  claim 9 , wherein said rigid member comprises a cylindrical shaft. 
     
     
       11. The reactor according to  claim 2 , wherein said first communications cable includes an angled portion, said photon density sensor being defined on a distal end of said angle portion. 
     
     
       12. The reactor according to  claim 1 , wherein said housing includes a cover, said photon density sensor being supported by said cover. 
     
     
       13. The reactor according to  claim 12 , wherein said photon density sensor comprises an optic communication fiber. 
     
     
       14. The reactor according to  claim 13 , wherein said optic communication fiber comprises a sapphire optic communication fiber. 
     
     
       15. The reactor according to  claim 1 , further comprising a second housing, said second housing being rotatably supported in said housing defining a processing chamber and being adapted to rotatably support the substrate in said processing chamber. 
     
     
       16. A reactor for processing a substrate, said reactor comprising: 
       a housing defining a processing chamber;  
       a light source supported in said housing;  
       a heater adapted to heat the substrate, said heater being supported in said housing;  
       a photon density sensor extending into said housing, said photon density sensor being adapted to measure the emissivity of the substrate and to move between a first position wherein said photon density sensor is directed to said light source and a second position wherein said photon density sensor is positioned for directing toward the substrate; and  
       a plurality of gas injectors supported by said housing, said plurality of gas injectors being adapted to inject at least one reactant gas into said processing chamber.  
     
     
       17. The reactor according to  claim 16 , wherein said gas injectors are arranged into at least two groups of gas injectors, each of said groups of gas injectors being adapted to selectively deliver at least one reactant gas and an inert gas into said processing chamber. 
     
     
       18. The reactor according to  claim 16 , further including a manifold supported by said housing said manifold being adapted to inject inert gas into said processing chamber. 
     
     
       19. The reactor according to  claim 18 , wherein said manifold comprises an injection ring, said injection ring being positioned and adapted to align with the periphery of the substrate for at least directing inert gas onto the periphery of the substrate. 
     
     
       20. The reactor according to  claim 16 , wherein each of said injectors is adapted to be independently controlled whereby flow of gas through each of said injectors can be independently adjusted. 
     
     
       21. The reactor according to  claim 16 , wherein said gas injectors are arranged in a uniform pattern adapted to direct a uniform flow of a gas toward the substrate. 
     
     
       22. The reactor according to  claim 16 , wherein said gas injectors are adapted to deliver the gas on a discrete area of the substrate. 
     
     
       23. The reactor according to  claim 22 , further comprising an exhaust manifold, said exhaust manifold adapted to remove unreacted gas from the processing chamber and to substantially confine the gas over the discrete area of the substrate. 
     
     
       24. The reactor according to  claim 23 , wherein said manifold extends around said plurality of gas injectors to substantially confine the gas in the processing chamber over the discrete area of the substrate, said exhaust manifold interposed between said injectors and said photon density sensor whereby said photon density sensor is free from film depositions from the gas. 
     
     
       25. The reactor according to  claim 16 , wherein said gas injectors are arranged in with a greater concentration of said gas injectors positioned and adapted to align with a peripheral region of the substrate and with a smaller concentration of gas injectors positioned and adapted to align with a central region of the substrate whereby the gas injected by the gas injectors produces a uniform deposition on the substrate. 
     
     
       26. The reactor according to  claim 16 , wherein said housing comprises a first housing, said reactor further comprising a second housing rotatably supported in said first housing, said second housing enclosing said heater and rotatably supporting the substrate thereon. 
     
     
       27. The reactor according to  claim 26 , said second housing having a removable platform, said removable platform being adapted to support the substrate in said processing chamber. 
     
     
       28. A method of processing a semiconductor substrate comprising the steps of: 
       providing a processing chamber;  
       supporting the substrate in the processing chamber;  
       directing light into the processing chamber toward the substrate;  
       providing a photon density sensor;  
       directing the photon density sensor to the light;  
       measuring the incident photon density from the light with the photon density sensor;  
       repositioning the photon density sensor to direct the photon density sensor to the substrate;  
       measuring the reflection of the light off the substrate;  
       comparing the measured incident photon density to the reflected light to calculate the substrate temperature;  
       heating the substrate; and  
       injecting at least one reactant gas into the chamber through at least one injector.  
     
     
       29. A method of processing a semiconductor substrate according to  claim 28 , wherein repositioning the photon density sensor includes rotating the photon density sensor. 
     
     
       30. A method of processing a semiconductor substrate according to  claim 28 , wherein rotating the photon density sensor includes rotating the photon density sensor about one hundred eighty degrees. 
     
     
       31. A method of processing a semiconductor substrate according to  claim 28 , wherein comparing the measured incident photon density to the reflected light includes: 
       providing a processor;  
       sending signals from the photon density sensor to the processor to calculate the substrate emissivity and temperature; and  
       calculating the temperature with the processor from the signals from the photon density sensor.  
     
     
       32. A method of processing a semiconductor substrate according to claim  28   31 , wherein sending signals includes: 
       forming the photon density sensor on a first communications cable: and  
       coupling the first communications cable to the processor.  
     
     
       33. A method of processing a semiconductor substrate according to  claim 32 , wherein coupling includes coupling the first communications cable to a second communications cable and coupling the second communications cable to the processor. 
     
     
       34. A method of processing a semiconductor substrate according to  claim 33 , wherein coupling the first communications cable to the second communications cable includes providing a slip coupling between the first communications cable and the second communications cable. 
     
     
       35. A method of processing a semiconductor substrate according to  claim 28 , further comprising adjusting the heating based on the temperature of the substrate. 
     
     
       36. A method of processing a semiconductor substrate according to  claim 28 , further comprising rotating the substrate in the processing chamber, said injecting includes directing the reactant gas to a discrete portion of the substrate while the substrate is rotating. 
     
     
       37. A method of processing a semiconductor substrate according to  claim 36 , wherein directing the reactant gas includes exhausting unreacted gas from the processing chamber to isolate the reactant gas over the discrete portion of the substrate whereby the photon density sensor remains free of undesirable film depositions from the reactant gas. 
     
     
       38. A method of processing a semiconductor substrate according to  claim 28 , wherein injecting includes a first reactant gas through a first group of the gas injectors and injecting a second reactant gas through a second group of the gas injectors. 
     
     
       39. A method of processing a semiconductor substrate according to  claim 28 , further comprising selectively varying the flow of the reactant gas through the gas injectors. 
     
     
       40. A method of processing a semiconductor substrate according to  claim 28 , further comprising arranging the gas injectors in a uniform pattern to direct a uniform flow of gas into the processing chamber. 
     
     
       41. A method of processing a semiconductor substrate according to  claim 28 , wherein injecting includes injecting the gas into the processing chamber with a non-uniform profile for uniformly depositing film on the substrate. 
     
     
       42. A method of processing a semiconductor substrate according to  claim 41 , wherein injecting the gas into the chamber with a non-uniform profile includes arranging the gas injectors in a non-uniform pattern to direct more gas to a peripheral region of the substrate and less gas to the central region of the substrate. 
     
     
       43. A reactor for processing a substrate, said reactor comprising: 
       
         a housing defining a processing chamber;  
       
       
         a light source positioned in said housing;  
       
       
         a heater positioned in said housing, said heater being adapted to heat the substrate;  
       
       
         at least one gas injector adapted to inject at least one gas into said processing chamber onto a surface of the substrate; and  
       
       
         a photon density sensor positioned in said housing, said photon density sensor being adapted to measure the emissivity of the substrate and to move between a first position wherein said photon density sensor is directed to said light source and a second position wherein said photon density sensor is positioned for directing toward the substrate. 
       
     
     
       44. The reactor according to  claim 43 , further comprising first and second communication cables, said first communication cable including said photon density sensor and being in communication with said second cable and being adapted to send signals from said photon density sensor to a processor. 
     
     
       45. The reactor according to  claim 43 , wherein said first and second communications cable comprise optical communication cables. 
     
     
       46. The reactor according to  claim 45 , wherein said first and second communications cables are interconnected by a slip connection. 
     
     
       47. The reactor according to  claim 46 , wherein said first communication cable is rotated between said first and second positions by a driver. 
     
     
       48. The reactor according to  claim 44 , wherein said first communications cable includes an angled portion said photon density sensor being defined on a distal end of said angle portion. 
     
     
       49. The reactor according to  claim 43 , further comprising a second housing, said second housing being rotatably supported in said housing defining a processing chamber and being adapted to rotatably support the substrate in said processing chamber. 
     
     
       50. A reactor for processing a substrate said reactor comprising: 
       
         a housing defining a processing chamber;  
       
       
         a light source positioned in said housing;  
       
       
         a heater adapted to heat the substrate said heater being supported in said housing;  
       
       
         a photon density sensor positioned in said housing, said photon density sensor being adapted to measure the emissivity of the substrate and to move between a first position wherein said photon density sensor is directed to said light source and a second position wherein said photon density sensor is positioned for directing toward the substrate; and  
       
       
         at least one gas injector supported by said housing, said gas injector being adapted to inject at least one reactant gas into said processing chamber. 
       
     
     
       51. The reactor according to  claim 50 , wherein said gas injector comprises a plurality of gas injectors said gas injectors are arranged into at least two groups of gas injectors, each of said groups of gas injectors being adapted to selectively deliver at least one reactant gas and an inert gas into said processing chamber. 
     
     
       52. The reactor according to  claim 50 , further including a manifold supported by said housing, said manifold including said at least one gas injector, said manifold being adapted to inject inert gas into said processing chamber. 
     
     
       53. The reactor according to  claim 52 , wherein said manifold comprises injection ring, said injection ring including a plurality of said gas injector said injection ring being positioned and adapted to align with the periphery of the substrate for at least directing inert gas onto the periphery of the substrate. 
     
     
       54. The reactor according to  claim 50 , wherein said at least one gas injector comprises a plurality of gas injectors, each of said injectors is adapted to be independently controlled whereby flow of gas through each of said injectors can be independently adjusted. 
     
     
       55. The reactor according to  claim 50 , wherein said at least one gas injector comprises a plurality of gas injectors, said gas injectors are arranged in a uniform pattern adapted to direct a uniform flow of a gas toward the substrate. 
     
     
       56. The reactor according to  claim 50  wherein said gas injector is adapted to deliver the gas on a discrete area of the substrate. 
     
     
       57. The reactor according to  claim 56 , further comprising an exhaust manifold, said exhaust manifold adapted to remove unreacted gas from the processing chamber and to substantially confine the gas over the discrete area of the substrate. 
     
     
       58. The reactor according to  claim 57 , wherein said at least one gas injector comprising a plurality of gas injectors, said manifold extending around said plurality of gas injectors to substantially confine the gas in the processing chamber over the discrete area of the substrate, said exhaust manifold interposed between said injectors and said photon density sensor whereby said photon density sensor is free from film depositions from the gas. 
     
     
       59. The reactor according to  claim 50 , wherein said at least one gas injector comprises a plurality of gas injectors, said gas injectors are arranged in with a greater concentration of said gas injectors positioned and adapted to align with a peripheral region of the substrate and with a smaller concentration of gas injectors positioned and adapted to align with a central region of the substrate whereby the gas injected by the gas injectors produces a uniform deposition on the substrate. 
     
     
       60. The reactor according to  claim 50 , wherein said housing comprises a first housing, said reactor further comprising a second housing rotatably supported in said first housing, said second housing enclosing said heater and rotatably supporting the substrate thereon. 
     
     
       61. The reactor according to  claim 60 , said second housing having a removable platform, said removable platform being adapted to support the substrate in said processing chamber.