Two-dimensional beam deflector

Abstract

A two dimensional beam deflector is disclosed which deflects beams from multiple optical assemblies. The input of beams of the multiple optical assemblies follow parallel optical paths until deflection to a wafer. An ellipsometer using a two-dimensional beam deflector is also disclosed.

I claim:  
     
       1. A two-dimensional beam deflector for a thickness measuring device for measuring the thickness of films on a sample with a plurality of different optical systems each performing a different measurement technique, the beam deflector comprising: 
       two-dimensional translation means for translating said beam deflector along a first scanning axis and along a second scanning axis perpendicular to said first scanning axis;  
       first deflection means for receiving a plurality of parallel input beams along parallel input axes, said input axes being close to each other and parallel to said first scanning axis, and for deflecting said input beams along a plurality of parallel second axes, said second axes being close to each other and parallel to said second scanning axis;  
       second deflection means for receiving a plurality of parallel output beams along parallel third axes, said third axes being close to each other and parallel to said second axes, and for deflecting said output beams along a plurality of parallel fourth axes, said fourth axes being close to each other and parallel to said first scanning axis; and  
       a plurality of optical assemblies, one per input beam, wherein each optical assembly provides its input beam towards said sample, receives its output beam from said sample, processes its input and output beams in accordance with its measurement technique, and provides its output beams along said parallel third axes.  
     
     
       2. A beam deflector according to  claim 1  and wherein said optical assemblies comprises at least an ellipsometric assembly and a spectrophotometric assembly. 
     
     
       3. A thickness measuring device for measuring the thickness of thin films on a sample with two measurement devices, the device comprising: 
       first and second stationary illuminators, one for each of said two measurement devices, for providing first and second collimated input light beams along first and second parallel input axes;  
       a beam deflector for directing said first and second input light beams toward said sample and for directing and collimating corresponding first and second output light beams from said sample, said beam deflector including two-dimensional translation means for translating said beam deflector along a first scanning axis parallel to said input axis, and along a second scanning axis perpendicular to said first scanning axis; and  
       first and second stationary receivers, one for each of said two measurement devices, for respectively receiving said first and second output light beams along output axes parallel to said input axes.  
     
     
       4. An ellipsometer for measuring the thickness of thin films on a sample comprising: 
       a stationary illuminator for providing a collimated input light beam along an input axis;  
       a beam deflector translatable at least along a first scanning axis parallel to said input axis including:  
       a first beam deflecting element for deflecting said input light beam at a first angle of deflection towards said sample;  
       a second beam deflecting element, different from said first beam deflecting element, for deflecting an output light beam reflected at a second angle from said sample along an output axis; and  
       a collimating lens for receiving at least said output light beam from said second beam deflecting element and for collimating at least said output light beam; and  
       a stationary receiver for receiving said collimated output light beam along an output axis parallel to said input axis.  
     
     
       5. A device according to  claim 4  and wherein said beam deflector comprises two-dimensional translation means for translating said beam deflector along said first scanning axis and along a second scanning axis perpendicular to said first scanning axis. 
     
     
       6. A device according to  claim 5  where said beam deflector additionally comprises a first mirror for deflecting said input light beam from said input axis to said second scanning axis, a second mirror for deflecting said input light beam from said second scanning axis to said sample, a third mirror for deflecting a reflected light beam reflected from said sample to said second scanning axis, and a fourth mirror for deflecting said reflected light beam from said second scanning axis to said output axis. 
     
     
       7. An ellipsometer for measuring the thickness of thin films on a sample comprising: 
       a stationary illuminator for providing a collimated input light beam along an input axis;  
       a beam deflector translatable at least along a first scanning axis parallel to said input axis including:  
       a first beam deflecting element for deflecting said input light beam at a first angle of deflection towards said sample;  
       a second beam deflecting element, different from said first beam deflecting element, for deflecting an output light beam reflected at a second angle from said sample along an output axis; and  
       a collimating lens for receiving at least said output light beam from said second beam deflecting element and for collimating at least said output light beam; and  
       a stationary receiver for receiving said collimated output light beam along an output axis parallel to said input axis,  
       wherein said beam deflector comprises on-dimensional translation means for translation along said scanning axis.  
     
     
       8. An ellipsometer for measuring the thickness of thin films on a sample comprising: 
       a stationary illuminator for providing a collimated input light beam along an input axis;  
       a beam deflector translatable at least along a first scanning axis parallel to said input axis including:  
       a first beam deflecting element for deflecting said input light beam at a first angle of deflection towards said sample;  
       a second beam deflecting element, different from said first beam deflecting element, for deflecting an output light beam reflected at a second angle from said sample along an output axis; and  
       a collimating lens for receiving at least said output light beam from said second beam deflecting element and for collimating at least said output light beam; and  
       a stationary receiver for receiving said collimated output light beam along an output axis parallel to said input axis,  
       wherein said first and second beam deflecting elements are mirrors.  
     
     
       9. An ellipsometer for measuring the thickness of thin films on a sample comprising: 
       a stationary illuminator for providing a collimated input light beam along an input axis;  
       a beam deflector translatable at least along a first scanning axis parallel to said input axis including:  
       a first beam deflecting element for deflecting said input light beam at a first angle of deflection towards said sample;  
       a second beam deflecting element, different from said first beam deflecting element, for deflecting an output light beam reflected at a second angle from said sample along an output axis; and  
       a collimating lens for receiving at least said output light beam from said second beam deflecting element and for collimating at least said output light beam; and  
       a stationary receiver for receiving said collimated output light beam along an output axis parallel to said input axis,  
       wherein said first beam deflecting element is a beam splitter and said second beam deflecting element is a mirror.  
     
     
       10. An ellipsometer for measuring the thickness of think films on a sample comprising: 
       a stationary illuminator for providing a collimated input light beam along an input axis;  
       a beam deflector translatable at least along a first scanning axis parallel to said input axis including:  
       a first beam deflecting element for deflecting said input light beam at a first angle of deflection towards said sample;  
       a second beam deflecting element, different from said first beam deflecting element, for deflecting an output light beam reflected at a second angle from said sample along an output axis; and  
       a collimating lens for receiving at least said output light beam from said second beam deflecting element and for collimating at least said output light beam; and  
       a stationary receiver for receiving said collimated output light beam along an output axis parallel to said input axis,  
       and also including means for measuring an actual angle of incidence which may vary from said second angle of deflection, wherein said means for measuring utilizes optical elements forming part of said stationary illuminator and stationary receiver.  
     
     
       11. A device according to  claim 10  and wherein said means for measuring comprises a position sensing device for measuring the angle of said output light beam with respect to a desired position. 
     
     
       12. A processing apparatus for processing a semiconductor sample, the apparatus comprising: 
       ( a )  a processing unit comprising several chambers for processing of a top layer of the sample under certain vacuum conditions within a working area inside the processing unit;    
       ( b )  an optical monitoring station associated with said processing unit and defining a monitoring area in one of the chambers outside said working area, said one of the chambers having an optical window through which at least a portion of said top layer of the sample is observable from outside of the chamber; and    
       ( c )  a robot for transferring said sample from said working area to said monitoring area without breaking the vacuum conditions;    
         wherein said optical monitoring station comprises an optical monitoring unit operable to scan at least a portion of the sample through said optical window, and comprises a two - dimensional beam deflector accommodated outside said at least one of the chambers, and operable for monitoring the thickness of said at least top layer of the sample through said optical window, while the sample is located inside said chamber under certain vacuum conditions;    
         wherein the two - dimensional beam deflector comprises a plurality of different optical systems each performing a different monitoring technique, the beam deflector comprising:    
         two - dimensional translation means for translating said beam deflector along a first scanning axis and along a second scanning axis perpendicular to said first scanning axis;    
       
         first deflection means for receiving a plurality of parallel input beams along parallel input axes, said input axes being close to each other and parallel to said first scanning axis, and for deflecting said input beams along a plurality of parallel second axes, said second axes being close to each other and parallel to said second scanning axis;  
       
       
         second deflection means for receiving a plurality of parallel output beams along parallel third axes, said third axes being close to each other and parallel to said second axes, and for deflecting said output beams along a plurality of parallel fourth axes, said fourth axes being close to each other and parallel to said first scanning axis; and  
       
       
         a plurality of optical assemblies, one per input beam, wherein each optical assembly provides its input beam towards said sample, receives its output beam from said sample, processes its input and output beams in accordance with its measurement technique, and provides its output beams along said parallel third axes. 
       
     
     
       13. A processing apparatus according to  claim 12 , wherein said optical assemblies comprise at least an ellipsometric assembly and a spectrophotometric assembly. 
     
     
       14. A processing apparatus for processing a semiconductor sample, the apparatus comprising: 
       ( a )  a processing unit comprising several chambers for processing of a top layer of the sample under certain vacuum conditions within a working area inside the processing unit;    
       ( b )  an optical monitoring station associated with said processing unit and defining a monitoring area in one of the chambers outside said working area, said one of the chambers having an optical window through which at least a portion of said top layer of the sample is observable from outside of the chamber; and    
       ( c )  a robot for transferring said sample from said working area to said monitoring area without breaking the vacuum conditions;    
       
         wherein said optical monitoring station comprises an optical monitoring unit accomodated outside said at least one of the chambers, and operable for monitoring the thickness of said at least top layer of the sample through said optical window, while the sample is located inside said chamber under certain vacuum conditions;  
       
       
         wherein said optical monitoring unit comprises two monitoring devices, each device comprising:  
       
       
         first and second stationary illuminators, one for each of said two measurement devices, for providing first and second collimated input light beams along first and second parallel input axes;  
       
         a beam deflector for directing said first and second input light beams toward said sample and for directing and collimating corresponding first and second output light beams from said sample, said beam deflector including two - dimensional translation means for translating said beam deflector along a first scanning axis parallel to said input axis, and along a second scanning axis perpendicular to said first scanning axis; and    
       
         first and second stationary receivers, one for each of said two measurement devices, for respectively receiving said first and second output light beams along output axes parallel to said input axes. 
       
     
     
       15. A process apparatus for processing a semiconductor sample, the apparatus comprising: 
       ( a )  a processing unit comprising several chambers for processing of a top layer of the sample under certain vacuum conditions within a working area inside the processing unit;    
       ( b )  an optical monitoring station associated with said processing unit and defining a monitoring area in one of the chambers outside said working area, said one of the chambers having an optical window through which at least a portion of said top layer of the sample is observable from outside of the chamber; and    
       ( c )  a robot for transferring said sample from said working area to said monitoring area without breaking the vacuum conditions;    
       
         wherein said optical monitoring station comprises an optical monitoring unit operable to scan at least a portion of the sample through said optical window, accommodated outside said at least one of the chambers, and operable for monitoring at least one desired parameter of said at least top layer of the sample through said optical window, while the sample is located inside said chamber under certain vacuum conditions;  
       
       
         wherein said optical monitoring unit additionally comprises an ellipsometer, said ellipsometer comprising:  
       
       
         a stationary illuminator for providing a collimated input light beam along an input axis;  
       
       
         a beam deflector translatable at least along a first scanning axis parallel to said input axis including:  
       
       
         a first beam deflecting element for deflecting said input light beam at a first angle of deflection towards said sample;  
       
       
         a second beam deflecting element, different from said first beam deflecting element, for deflecting an output light beam reflected at a second angle from said sample along an output axis; and  
       
       
         a collimating lens for receiving at least said output light beam from said second beam deflecting element and for collimating at least said output light beam and  
       
       
         a stationary receiver for receiving said collimated output light beam along an output axis parallel to said input axis. 
       
     
     
       16. A process apparatus according to  claim 15 , wherein said beam deflector comprises two- dimensional translation means for translating said beam deflector along said first scanning axis and along a second scanning axis perpendicular to said first scanning axis.   
     
     
       17. A processing apparatus according to  claim 16 , wherein said beam deflector additionally comprises a first mirror for deflecting said input light beam from said input axis to said second scanning axis, a second mirror for deflecting said input light beam from said second scanning axis to said sample, a third mirror for deflecting a reflected light beam reflected from said sample to said second scanning axis, and a fourth mirror for deflecting said reflected light beam from said second scanning axis to said output axis. 
     
     
       18. A processing apparatus according to  claim 15 , wherein said beam deflector comprises one- dimensional translation means for translation along said scanning axis.   
     
     
       19. A processing apparatus according to  claim 15  wherein said first and second beam deflecting elements are mirrors. 
     
     
       20. A process apparatus according to  claim 15  wherein said first beam deflecting element is a beam splitter and said second beam deflecting element is a mirror. 
     
     
       21. A processing apparatus according to  claim 15  further comprising means for measuring an actual angle of incidence which may vary from said second angle of deflection, wherein said means for measuring utilizes optical elements forming part of said stationary illuminator and stationary receiver. 
     
     
       22. A processing apparatus according to  claim 21 , wherein said means for measuring comprises a position sensing device for measuring the angle of said output light beam with respect to a desired position.