USRE38465EExpiredUtilityPatentIndex 62
Exposure apparatus
Est. expiryDec 14, 2014(expired)· nominal 20-yr term from priority
G03F 7/70241G02B 13/143G02B 9/62G02B 13/24
62
PatentIndex Score
3
Cited by
53
References
190
Claims
Abstract
A projection optical system of the present invention has a first lens group G 1 being positive, a second lens group G 2 being negative, a third lens group G 3 being positive, a fourth lens group G 4 being negative, a fifth lens group G 5 being positive, and a sixth lens group G 6 being positive in the named order from the first object toward the second object, in which the second lens group G 2 comprises an intermediate lens group G 2M between a negative front lens L 2F and a negative rear lens L 2R and in which the intermediate lens group G 2M is arranged to comprise at least a first positive lens being positive, a second lens being negative, a third lens being negative, and a fourth lens being negative in the named order from the first object toward the second object. The present invention involves findings of suitable focal length ranges for the first to the sixth lens groups G 1 to G 6 and an optimum range of an overall focal length of from the second negative lens to the fourth lens with respect to a focal length of the second lens group G 2 .
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, said first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said six lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group, and
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object.
2. A projection optical system according to claim 1 , wherein the first lens with positive refracting power in said intermediate lens group in said second lens group has a lens shape with a convex surface to the second object.
3. A projection optical system according to claim 2 , wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
4. A projection optical system according to claim 3 , wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
5. A projection optical system according to claim 4 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
6. A projection optical system according to claim 5 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
7. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 5 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
8. A projection optical system according to claim 6 , wherein said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object.
9. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 8 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
10. A projection optical system according to claim 1 , wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having a negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
11. A projection optical system according to claim 1 , wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
12. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 1 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
13. A projection optical system located between a first object and a second object, said projection optical system having a first lens group with positive refracting power, a second lens group with negative refracting power, a third lens group with positive refracting power, a fourth lens group with negative refracting power, a fifth lens group with positive refracting power, and a sixth lens group with positive refracting power in the named order from the first object toward the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f 1 , a focal length of said second lens group is f 2 , a focal length of said third lens group is f 3 , a focal length of said fourth lens group is f 4 , a focal length of said fifth lens group is f 5 , a focal length of said sixth lens group is f 6 , an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is f n , and a distance from the first object to the second object is L:
0.1<f 1 /f 3 <17
0.1<f 2 /f 4 <14
0.01<f 5 /L<0.9
0.02<f 6 /L<1.6
0.01<f n /f 2 <2.0.
14. A projection optical system according to claim 13 , wherein the following condition is satisfied when an axial distance from the first object to a first-object-side focal point of the whole of said projection optical system is I and the distance from the first object to the second object is L:
1.0<I/L.
15. A projection optical system according to claim 14 , therein wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f 23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f 24 :
0.07<f 24 /f 23 <7.
16. A projection optical system according to claim 15 , wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f 22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f 23 :
0.01<f 22 /f 23 <10.
17. A projection optical system according to claim 16 , wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f 21 and the distance from the first object to the second object is L:
0.230<f 21 /L<0.40.
18. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 16 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
19. A projection optical system according to claim 13 , wherein said intermediate lens group in said second lens group has negative refracting power.
20. A projection optical system according to claim 13 , wherein the following condition is satisfied when the focal length of said second lens group is f 2 and the distance from the first object to the second object is L:
−0.8<f 2 /L<−0.050.
21. A projection optical system according to claim 13 , wherein the following condition is satisfied when a focal length of said front lens placed as closest to the first object in said second lens group and having negative refracting power with a concave surface to the second object is f 2F and a focal length of said rear lens placed as closest to the second object in said second lens group and having negative refracting power with a concave surface to the first object is f 2R :
0≦f 2F /f 2R <18.
22. A projection optical system according to claim 13 , wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f 23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f 24 :
0.07<f 24 /f 23 <7.
23. A projection optical system according to claim 13 , wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f 22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f 23 :
0.1<f 22 /f 23 <10.
24. A projection optical system according to claim 13 , wherein the following condition is satisfied when an axial distance from a second-object-side lens surface of said fourth lens with negative refracting power in said intermediate lens group in said second lens group to a first-object-side lens surface of said rear lens in said second lens group is D and the distance from the first object to the second object is L:
0.05<D/L<0.4.
25. A projection optical system according to claim 13 , wherein said first lens with positive refracting power in said intermediate lens group in said second lens group has a lens shape with a convex surface to the second object, and
wherein the following condition is satisfied when the refracting power of a second-object-side lens surface of said first lens with positive refracting power in said intermediate lens group in said second lens group is Φ 21 and the distance from the first object to the second object is L:
0.54<1/(Φ 21 ·L)<10.
26. A projection optical system according to claim 13 , wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f 21 and the distance from the first object to the second object is L:
0.230<f 21 /L<0.40.
27. A projection optical system according to claim 13 , wherein the following condition is satisfied when the focal length of said fourth lens group is f 4 and the distance from said the first object to the second object is L:
−0.098<f 4 /L<−0.005.
28. A projection optical system according to claim 13 , wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group, and
wherein the following condition is satisfied when a radius of curvature on the first object side in said rear lens places as closest to the second object in said fourth lens group is r 4F and a radius of curvature on the second object side in said rear lens placed as closest to the second object in said fourth lens group is r 4R :
−1.00≦(r 4F −r 4R )/(r 4F +r 4R )<0.
29. A projection optical system according to claim 13 , wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens, and
wherein the following condition is satisfied when a radius of curvature of the concave surface of said negative meniscus lens in said fifth lens group is r 5n and a radius of curvature of the convex surface opposed to the concave surface of said negative meniscus lens in said positive lens placed adjacent to the concave surface of said negative meniscus lens in said fifth lens group is r 5p :
0<(r 5p −r 5n )/(r 5p +r 5n )<1.
30. A projection optical system according to claim 29 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
31. A projection optical system according to claim 13 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object, and
wherein the following condition is satisfied when a radius of curvature on the first object side in said negative lens closest to the second object in said fifth lens group is r 5F and a radius of curvature on the second object side in said negative lens closest to the second object in said fifth lens group is r 5R :
0.30<(r 5F −r 5R )/(r 5F +r 5R )<1.28.
32. A projection optical system according to claim 13 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object and said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object, and
wherein the following condition is satisfied when a radius of curvature on the second object side, of said negative lens placed as closest to the second object in said fifth lens group is r 5R and a radius of curvature on the first object side, of said lens placed as closest to the first object in said sixth lens group is r 6F :
−0.90<(r 5R −r 6F )/(r 5R +r 6F )<−0.001.
33. A projection optical system according to claim 13 , wherein the following condition is satisfied when a lens group separation between said fifth lens group and said sixth lens group is d 56 and the distance from the first object to the second object is L:
d 56 /L<0.017.
34. A projection optical system according to claim 13 , wherein the following condition is satisfied when a radius of curvature of a lens surface closest to the first object in said sixth lens group is r 6F and an axial distance from the lens surface closest to the first object in said sixth lens group to the second object is d 6 :
0.50<d 6 /r 6F <1.50.
35. A projection optical system according to claim 13 , wherein said sixth lens group comprises three or less lenses having at least one surface satisfying the following condition:
1/|φL|<20,
where Φ: refracting power of the lens surface;
L: object-image distance from the first object to the second object.
36. A projection optical system according to claim 13 , wherein a magnification of said projection optical system is 5:1.
37. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 13 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
38. A projection optical system according to claim 13 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
39. A projection optical system according to claim 38 , wherein the following condition is satisfied when a lens group separation between said fifth lens group and said sixth lens group is d 56 and the distance from the first object to the second object is L:
d 56 /L<0.017.
40. A projection optical system according to claim 38 , wherein the following condition is satisfied when a radius of curvature of a lens surface closest to the first object in said sixth lens group is r 6F and an axial distance from the lens surface closest to the first object in said sixth lens group to the second object is d 6 :
0.50<d 6 /r 6F <1.50.
41. A projection optical system according to claim 38 , wherein said sixth lens group comprises three or less lenses having at least one surface satisfying the following condition:
1/|ΦL|<20.
where Φ: refracting power of the lens surface;
L:
object-image distance from the first object to the second object.
42. An exposure apparatus comprising:
a stage allowing a photosensitive substrate to be held on a main surface thereof;
an illumination optical system for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern on a mask onto the substrate; and
a projecting optical system for projecting an image of the mask, on the substrate surface, said projecting optical system having:
a first lens group with positive refracting power, said first lens group being placed between the mask and the main surface of said stage;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the main surface of said stage;
a third lens group with positive refracting power, said third lens groups being placed between said second lens group and the main surface of said stage;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the main surface of said stage;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the main surface of said stage; and
a sixth lens group, said sixth lens group being placed between said fifth lens group and the main surface of said stage,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having a negative refracting power with a concave surface to the second object, a rear lens as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group, and
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object.
43. An exposure apparatus according to claim 42 ,
wherein the following conditions are satisfied when a focal length of said first lens group is f 1 , a focal length of said second lens group is f 2 , a focal length of said third lens group is f 3 , a focal length of said fourth lens group is f 4 , a focal length of said fifth lens group is f 5 , a focal length of said sixth lens group is f 6 , an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is f n , and a distance from the first object to the second object is L:
0.1<f 1 /f 3 <17
0.1<f 1 /f 4 <14
0.01<f 5 /L<0.9
0.02<f 6 /L<1.6
0.01<f n /f 2 <2.0.
44. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, said first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said six lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens, and
wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
45. A projection optical system according to claim 44 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
46. A projection optical system according to claim 45 , wherein the following condition is satisfied when an axial distance from the first object to a first-object-side focal point of the whole of said projection optical system is I and the distance from the first object to the second object is L:
1.0<I/L.
47. A projection optical system according to claim 46 , wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
48. A projection optical system according to claim 47 ,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f 1 , a focal length of said second lens group is f 2 , a focal length of said third lens group is f 3 , a focal length of said fourth lens group is f 4 , a focal length of said fifth lens group is f 5 , a focal length of said sixth lens group is f 6 , an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is f n , and a distance from the first object to the second object is L:
0.1<f 1 /f 3 <17
0.1<f 2 /f 4 <14
0.01<f 5 /L<0.9
0.02<f 6 /L<1.6
0.01<f n /f 2 <2.0.
49. A projection optical system according to claim 48 , wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f 23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f 24 :
0.07<f 24 /f 23 <7.
50. A projection optical system according to claim 49 , wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f 22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f 23 :
0.01<f 22 /f 23 <10.
51. A projection optical system according to claim 49 48 , wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f 22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f 23 :
0.01<f 22 /f 23 <10.
52. A projection optical system according to claim 50 , wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in second lens group is f 21 and the distance from the first object to the second object is L:
0.230<f 21 /L<0.40.
53. A projection optical system according to claim 50 48 , wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f 21 and the distance from the first object to the second object is L:
0.230<f 21 /L<0.40.
54. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 50 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
55. A projection optical system according to claim 46 ,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f 1 , a focal length of said second lens group is f 2 , a focal length of said third lens group is f 3 , a focal length of said fourth lens group is f 4 , a focal length of said fifth lens group is f 5 , a focal length of said sixth lens group is f 6 , an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is f n , and a distance from the first object to the second object is L:
0.1<f 1 /f 3 <17
0.1<f 2 /f 4 <14
0.01<f 5 /L<0.9
0.02<f 6 /L<1.6
0.01<f n /f 2 <2.0.
56. A projection optical system according to claim 55 , wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f 23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f 24 :
0.07<f 24 /f 23 <7.
57. A projection optical system according to claim 47 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
58. A projection optical system according to claim 57 , wherein the following condition is satisfied when a radius of curvature of a lens surface closest to the first object in said sixth lens group is r 6F and an axial distance from the lens surface closest to the first object in said sixth lens group to the second object is d 6 :
0.50<d 6 /r 6F <1.50.
59. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 58 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
60. A projection optical system according to claim 58 ,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group,
wherein said intermediate lens group has a first lens with positive refracting power, a second lens with negative refracting power, a third lens with negative refracting power, and a fourth lens with negative refracting power in the named order from the first object toward the second object, and
wherein the following conditions are satisfied when a focal length of said first lens group is f 1 , a focal length of said second lens group is f 2 , a focal length of said third lens group is f 3 , a focal length of said fourth lens group is f 4 , a focal length of said fifth lens group is f 5 , a focal length of said sixth lens group is f 6 , an overall focal length of said second lens to said fourth lens in said intermediate lens group in said second lens group is f n , and a distance from the first object to the second object is L:
0.1<f 1 /f 3 <17
0.1<f 2 /f 4 <14
0.01<f 5 /L<0.9
0.02<f 6 /L<1.6
0.01<f n /f 2 <2.0.
61. A projection optical system according to claim 60 , wherein the following condition is satisfied when a focal length of said third lens with negative refracting power in said second lens group is f 23 and a focal length of said fourth lens with negative refracting power in said intermediate lens group in said second lens group is f 24 :
0.07<f 24 /f 23 <7.
62. A projection optical system according to claim 61 , wherein the following condition is satisfied when a focal length of said second lens with negative refracting power in said intermediate lens group in said second lens group is f 22 and a focal length of said third lens with negative refracting power in said intermediate lens group in said second lens group is f 23 :
0.01<f 22 /f 23 <10.
63. A projection optical system according to claim 62 , wherein the following condition is satisfied when a focal length of said first lens with positive refracting power in said intermediate lens group in said second lens group is f 21 and the distance from the first object to the second object is L:
0.230<f 21 /L<0.40.
64. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 44 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
65. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, said first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said sixth lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group, and
wherein the following condition is satisfied when a radius of curvature on the first object side in said rear lens placed as closest to the second object in said fourth lens group is r 4F and a radius of curvature on the second object side in said rear lens placed as closest to the second object in said fourth lens group is r 4R :
−1.00≦(r 4F −r 4R )/(r 4F +r 4R )<0.
66. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 65 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
67. A projection optical system according to claim 65 , wherein said fifth lens group comprises a negative meniscus lens, and a positive lens places as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens, and
wherein the following condition is satisfied when a radius of curvature of the concave surface of said negative meniscus lens in said fifth lens group is r 5n and a radius of curvature of the convex surface opposed to the concave surface of said negative meniscus lens in said positive lens placed adjacent to the concave surface of said negative meniscus lens in said fifth lens group is r 5p :
0<(r 5p −r 5n )/(r 5p +r 5n )<1.
68. A projection optical system according to claim 67 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
69. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 68 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
70. An exposure apparatus comprising:
a stage allowing a photosensitive substrate to be held on a main surface thereof;
an illumination optical system for emitting exposure light of a predetermined wavelength and transferring a predetermined pattern on a mask onto said substrate; and
a projecting optical system for projecting an image of the pattern on said mask onto said substrate, said projecting optical system being provided between said mask and said substrate and having:
a first lens group with positive refracting power, said first lens group being placed between said mask and said substrate;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and said substrate;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and said substrate;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and said substrate;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and said substrate; and
a sixth lens group with positive refracting power, said sixth lens group being placed between said fifth lens group and said substrate,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens, and
wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
71. An exposure apparatus according to claim 70 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
72. A projection optical system located between a first object and a second object, for projecting an image of the first object onto the second object, said projection optical system having:
a first lens group with positive refracting power, and first lens group being placed between the first and second objects;
a second lens group with negative refracting power, said second lens group being placed between said first lens group and the second object;
a third lens group with positive refracting power, said third lens group being placed between said second lens group and the second object;
a fourth lens group with negative refracting power, said fourth lens group being placed between said third lens group and the second object;
a fifth lens group with positive refracting power, said fifth lens group being placed between said fourth lens group and the second object; and
a sixth lens group with positive refracting power, said six lens group being placed between said fifth lens group and the second object,
wherein said first lens group includes at least two positive lenses, said third lens group includes at least three positive lenses, said fourth lens group includes at least three negative lenses, said fifth lens group includes at least five positive lenses and at least one negative lens, and said sixth lens group includes at least one positive lens,
wherein said second lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and an intermediate lens group placed between said front and rear lenses in said second lens group, and
wherein said intermediate lens group includes a positive lens and a negative lens.
73. A projection optical system according to claim 72 , wherein the following condition is satisfied when an axial distance from the first object to a first-object-side focal point of the whole of said projection optical system is I and the distance from the first object to the second object is L:
1.0<I/L.
74. A projection optical system according to claim 73 , wherein said fourth lens group comprises a front lens placed as closest to the first object and having negative refracting power with a concave surface to the second object, a rear lens placed as closest to the second object and having negative refracting power with a concave surface to the first object, and at least one negative lens placed between said front lens in said fourth lens group and said rear lens in said fourth lens group.
75. A projection optical system according to claim 73 , wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
76. A projection optical system according to claim 75 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
77. A projection optical system according to claim 76 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
78. A projection optical system according to claim 77 , wherein said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object.
79. A projection optical system according to claim 74 , wherein said fifth lens group comprises a negative meniscus lens, and a positive lens placed as adjacent to a concave surface of said negative meniscus lens and having a convex surface opposed to the concave surface of said negative meniscus lens.
80. A projection optical system according to claim 79 , wherein said negative meniscus lens and said positive lens adjacent to the concave surface of said negative meniscus lens are placed between positive lenses in said fifth lens group.
81. A projection optical system according to claim 80 , wherein said fifth lens group comprises a negative lens placed as closest to the second object and having a concave surface opposed to the second object.
82. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 80 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
83. A projection optical system according to claim 81 , wherein said sixth lens group comprises a lens placed as closest to the first object and having a convex surface opposed to the first object.
84. A method for fabricating at least semiconductor devices or liquid crystal display devices by using a projection optical system according to claim 72 , comprising the steps of:
illuminating a mask prepared as said first object with light of a predetermined wavelength, said mask being formed with a predetermined pattern thereon; and
projecting an image of the pattern on said mask onto a photosensitive substrate prepared as said second object through said projection optical system, thereby performing an exposure process.
85. A method of manufacturing a projection optical system to project an image of a first object onto a second object, comprising the steps of:
preparing a first lens group with positive power which includes at least two positive lenses;
preparing a second lens group with negative power;
preparing a third lens group with positive power which includes at least three positive lenses;
preparing a fourth lens group with negative power which includes at least three negative lenses;
preparing a fifth lens group with positive power which includes at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens;
preparing a sixth lens group with positive power which includes at least one positive lens;
disposing said first lens group in an optical path between an object surface in which the first object is disposed and said second lens group;
disposing said second lens group in an optical path between said first lens group and said third lens group;
disposing said third lens group in an optical path between said second lens group and said fourth lens group;
disposing said fourth lens group in an optical path between said third lens group and said fifth lens group;
disposing said fifth lens group in an optical path between said fourth lens group and said sixth lens group; and
disposing said sixth lens group in an optical path between said fifth lens group and an image plane in which the second object is disposed.
86. A method according to claim 85 , wherein said step of disposing said fifth lens group comprises the step of placing said negative additional lens and said positive additional lens between two positive first lenses of said at least five positive first lenses.
87. A method according to claim 86 , wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
88. A method according to claim 85 , wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
89. A method according to claim 85 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens having a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative meniscus lens.
90. A method according to claim 86 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
91. A method according to claim 85 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
92. A method according to claim 86 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
93. A method according to claim 87 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
94. A method according to claim 88 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
95. A method according to claim 90 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
96. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 85 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
97. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 86 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
98. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 87 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
99. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 88 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
100. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 89 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
101. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 90 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
102. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 91 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
103. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 92 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
104. A method for fabricating at least a semiconductor device or a liquid crystal device by using a projection optical system manufactured by a method according to claim 93 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
105. A method for exposing a pattern formed on a reticle onto a substrate by using a projection optical system manufactured by a method according to claim 85 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
106. A method for exposing a pattern formed on a reticle onto a substrate by using a projection optical system manufactured by a method according to claim 86 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system.
107. A method of manufacturing an exposure apparatus to expose an image of a first object onto a second object, comprising the steps of:
providing an illumination optical system to illuminate the first object; and
providing a projection optical system to project the image of the first object onto the second object;
wherein said projection optical system comprises:
a first lens group with positive power, said first lens group including at least two positive lenses;
a second lens group with negative power;
a third lens group with positive power, said third lens group including at least three positive lenses;
a fourth lens group with negative power, said fourth lens group including at least three negative lenses;
a fifth lens group with positive power, said fifth lens group including at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens; and
a sixth lens group with positive power, said sixth lens group including at least one positive lens;
wherein said first lens group is disposed in an optical path between an object surface in which the first object is disposed and said second lens group;
said second lens group is disposed in an optical path between said first lens group and said third lens group;
said third lens group is disposed in an optical path between said second lens group and said fourth lens group;
said fourth lens group is disposed in an optical path between said third lens group and said fifth lens group;
said fifth lens group is disposed in an optical path between said fourth lens group and said sixth lens group; and
said sixth lens group is disposed in an optical path between said fifth lens group and an image plane in which the second object is disposed.
108. A method according to claim 107 , wherein said negative additional lens and said positive additional lens are placed between two positive first lenses of said at least five positive first lenses.
109. A method according to claim 108 , wherein said negative additional lens placed in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
110. A method according to claim 107 , wherein said negative additional lens placed in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
111. A method according to claim 107 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens having a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative meniscus lens.
112. A method according to claim 107 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
113. A method according to claim 107 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
114. A method according to claim 108 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
115. A method according to claim 109 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
116. A method according to claim 112 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
117. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 107 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
118. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 108 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
119. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 109 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
120. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 112 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
121. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 113 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
122. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 114 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
123. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 107 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
124. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 108 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
125. A method of manufacturing an exposure apparatus to expose an image of a first object onto a second object, comprising the steps of:
providing an illumination optical system to illuminate the first object; and
providing a projection optical system to project the image of the first object onto the second object;
wherein said step of providing said projection optical system comprises the steps of:
preparing a first lens group with positive power which includes at least two positive lenses;
preparing a second lens group with negative power;
preparing a third lens group with positive power which includes at least three positive lenses;
preparing a fourth lens group with negative power which includes at least three negative lenses;
preparing a fifth lens group with positive power which includes at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens;
preparing a lens sixth group with positive power which includes at least one positive lens;
disposing said first lens group in an optical path between an object surface in which the first object is disposed and said second lens group;
disposing said second lens group in an optical path between said first lens group and said third lens group;
disposing said third lens group in an optical path between said second lens group and said fourth lens group;
disposing said fourth lens group in an optical path between said third lens group and said fifth lens group;
disposing said fifth lens group in an optical path between said fourth lens group and said sixth lens group; and
disposing said sixth lens group in an optical path between said fifth lens group and an image plane in which the second object is disposed.
126. A method according to claim 125 , wherein said step of disposing said fifth lens group comprises the step of placing said negative additional lens and said positive additional lens between two positive first lenses of said at least five positive first lenses.
127. A method according to claim 126 , wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
128. A method according to claim 125 , wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
129. A method according to claim 125 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens having a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative meniscus lens.
130. A method according to claim 125 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
131. A method according to claim 125 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
132. A method according to claim 126 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
133. A method according to claim 127 , further comprising the step of disposing an aperture stop between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
134. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 125 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
135. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 126 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
136. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 127 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
137. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 128 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
138. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 131 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
139. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 132 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
140. A method for fabricating at least a semiconductor device or a liquid crystal device by using an exposure apparatus manufactured by a method according to claim 133 , comprising the steps of:
disposing a reticle as the first object in the object surface;
disposing a substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
141. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 125 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
142. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 126 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
143. A method for exposing a pattern formed on a reticle onto a substrate by using an exposure apparatus manufactured by a method according to claim 127 , comprising the steps of:
disposing the reticle as the first object in the object surface;
disposing the substrate as the second object in the image plane;
illuminating the reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on the reticle onto the substrate through said projection optical system of said exposure apparatus.
144. A method for fabricating at least a semiconductor device or a liquid crystal device, comprising the steps of:
providing a reticle having a predetermined pattern;
providing a substrate;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of the pattern formed on the reticle onto the substrate by using a projection optical system;
wherein said projection optical system comprises:
a first lens group with positive power, said first lens group including at least two positive lenses;
a second lens group with negative power;
a third lens group with positive power, said third lens group including at least three positive lenses;
a fourth lens group with negative power, said fourth lens group including at least three negative lenses;
a fifth lens group with positive power, said fifth lens group including at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens; and
a sixth lens group with positive power, said sixth lens group including at least one positive lens;
wherein said first lens group is disposed in an optical path between an object surface in which the reticle is disposed and said second lens group;
said second group is disposed in an optical path between said first lens group and said third lens group;
said third lens group is disposed in an optical path between said second lens group and said fourth lens group;
said fourth lens group is disposed in an optical path between said third lens group and said fifth lens group;
said fifth lens group is disposed in an optical path between said fourth lens group and said sixth lens group; and
said sixth lens group is disposed in an optical path between said fifth lens group and an image plane at which the substrate is disposed.
145. A method according to claim 144 , wherein said negative additional lens and said positive additional lens are placed between two positive first lenses of said at least five positive first lenses.
146. A method according to claim 145 , wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
147. A method according to claim 145 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
148. A method according to claim 144 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
149. A method according to claim 145 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
150. A method according to claim 146 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
151. A method according to claim 147 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
152. A method for exposing a pattern formed on a reticle onto a substrate, comprising the steps of:
providing the reticle having a predetermined pattern;
providing the substrate in an image plane;
illuminating the reticle with light having a predetermined wavelength; and
projecting an image of the pattern formed on the reticle onto the substrate by using a projection optical system;
wherein said projection optical system comprises:
a first lens group with positive power, said first lens group including at least two positive lenses;
a lens second group with negative power;
a third lens group with positive power, said third lens group including at least three positive lenses;
a fourth lens group with negative power, said fourth lens group including at least three negative lenses;
a fifth lens group with positive power, said fifth lens group including at least five positive first lenses and at least one negative first lens, said fifth lens group further including a negative additional lens and a positive additional lens placed adjacent to said negative additional lens; and
a sixth lens group with positive power, said sixth lens group including at least one positive lens;
wherein said first lens group is disposed in an optical path between an object surface in which the reticle is disposed and said second lens group;
said second lens group is disposed in an optical path between said first lens group and said third lens group;
said third lens group is disposed in an optical path between said second lens group and said fourth lens group;
said fourth lens group is disposed in an optical path between said third lens group and said fifth lens group;
said sixth lens group is disposed in an optical path between said fifth lens group and the image plane at which the substrate is disposed.
153. A method according to claim 152 , wherein said negative additional lens and said positive additional lens are placed between two positive first lenses of said at least five positive first lenses.
154. A method according to claim 153 , wherein said negative additional lens in said fifth lens group has a concave surface, and said positive additional lens in said fifth lens group has a convex surface facing the concave surface of said negative additional lens.
155. A method according to claim 153 , wherein said negative additional lens in said fifth lens group includes a negative meniscus lens.
156. A method according to claim 152 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
157. A method according to claim 153 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
158. A method according to claim 154 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
159. A method according to claim 155 , wherein said projection optical system further comprises an aperture stop disposed between said negative additional lens of said fifth lens group and at least one of the three negative lenses of the fourth lens group.
160. A projection optical system disposed in an optical path between a first surface on which a reticle is arranged and a second surface on which a substrate is arranged, for projecting a pattern of the reticle onto the substrate, comprising:
a first positive lens group having a positive power and disposed in the optical path between said first and second surfaces, said first positive lens group comprising a positive lens having a convex surface and a negative lens having a concave surface disposed near said positive lens and facing said convex surface, and two adjacent positive lenses disposed in an optical path between the positive lens and the second surface and disposed in an optical path between the negative lens and the second surface;
a first negative lens group having a negative power and disposed on an optical path between said first surface and said first positive lens group, said first negative lens group comprising at least three negative lenses;
a second positive lens group having a positive power and disposed in an optical path between said first surface and said first negative lens group, said second positive lens group comprising at least three positive lenses;
a second negative lens group having a negative power and disposed in an optical path between said first surface and said second positive lens group, said second negative lens group comprising at least one lens having a concave surface facing said first surface; and
a rear lens group disposed in an optical path between the first positive lens group and the second surface and having a positive power, the rear lens group comprising at least one positive lens;
none of the lenses constructing said projection optical system being a compound lens, and a numerical aperture of said projection optical system at the second surface on which the substrate is arranged comprising at least 0 . 55 .
161. The projection optical system according to claim 160 , further comprising an aperture stop disposed in an optical path at a position upstream with respect to said positive lens having said convex surface and said negative lens having said concave surface disposed near said positive lens having said convex surface.
162. The projection optical system according to claim 160 , wherein said projection optical system comprises a lens made of fluorite.
163. The projection optical system according to claim 160 , wherein said first positive lens group comprises a plurality of lenses having concave surfaces opposite to the second surface respectively.
164. The projection optical system according to claim 163 , wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
165. The projection optical system according to claim 160 , wherein the first positive lens group comprises a negative lens arranged nearest to the second surface.
166. The projection optical system according to claim 165 , further comprising a front lens group disposed in an optical path between said second negative lens group and the first surface, said front lens group comprising at least two lenses.
167. The projection optical system according to claim 160 , wherein said projection optical system comprises a lens made of fluorite and said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
168. The projection optical system according to claim 161 , wherein said projection optical system comprises a lens made of fluorite and said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
169. An exposure apparatus for exposing a pattern of a reticle onto a substrate, comprising:
an illumination optical system which illuminates the reticle; and
a projection optical system disposed in an optical path between a first surface on which the reticle is arranged and a second surface on which the substrate is arranged, for projecting the pattern of the reticle onto the substrate, said projection optical system comprising:
a first positive lens group having a positive power and disposed in the optical path between said first and second surfaces, said first positive lens group comprising a positive lens having a convex surface, a negative lens having a concave surface disposed near said positive lens and facing said convex surface, and two adjacent positive lenses disposed in an optical path between the positive lens and the second surface and disposed in an optical path between the negative lens and the second surface;
a first negative lens group having a negative power and disposed on an optical path between said first surface and said first positive lens group, said first negative lens group comprising at least three negative lenses;
a second positive lens group having a positive power and disposed in an optical path between said first surface and said first negative lens group, said second positive lens group comprising at least three positive lenses;
a second negative lens group having a negative power and disposed in an optical path between said second positive lens group and said first surface, said second negative lens group comprising at least one lens having a concave surface facing said first surface; and
a rear lens group disposed in an optical path between the first positive lens group and the second surface and having a positive power, the rear lens group comprising at least one positive lens;
none of the lenses constructing said projection optical system being a compound lens, and a numerical aperture of said projection optical system at the second surface on which the substrate is arranged comprising at least 0 . 55 .
170. The exposure apparatus according to claim 169 , wherein said projection optical system comprises a lens made of fluorite.
171. The exposure apparatus according to claim 170 , further comprising an aperture stop disposed in an optical path at a position upstream with respect to said positive lens having said convex surface and said negative lens having said concave surface disposed near said positive lens having said convex surface.
172. The exposure apparatus according to claim 169 , wherein the two adjacent positive lenses in the first positive lens group have concave surfaces opposite to the second surface respectively.
173. The exposure apparatus according to claim 172 , wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
174. The exposure apparatus according to claim 170 , wherein said illumination optical system comprises an excimer laser supplying a light having a wavelength of 193 nm.
175. The exposure apparatus according to claim 169 , wherein the first positive lens group and said comprises a negative lens arranged nearest to the second surface.
176. The exposure apparatus according to claim 169 , further comprising a front lens group disposed in an optical path between said second negative lens group and the first surface, said front lens group comprising at least two lenses.
177. The exposure apparatus according to claim 169 , wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
178. The exposure apparatus according to claim 170 , wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
179. The exposure apparatus according to claim 176 , wherein said projection optical system is telecentric in both a side of the first surface and a side of the second surface.
180. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 169 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
181. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 170 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
182. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 171 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
183. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 172 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
184. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 173 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
185. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 174 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
186. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 175 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
187. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 176 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
188. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 177 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
189. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 178 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.
190. A method of manufacturing a semiconductor device or a liquid crystal device by using the exposure apparatus according to claim 179 , said method comprising the steps of:
disposing a reticle on said first surface;
disposing a substrate on said second surface;
illuminating said reticle with light having a predetermined wavelength by using said illumination optical system of said exposure apparatus; and
projecting an image of a pattern formed on said reticle onto said substrate by using said projection optical system of said exposure apparatus.Cited by (0)
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