P
USRE40100EExpiredUtilityPatentIndex 74

Fabrication of B/C/N/O/Si doped sputtering targets

Assignee: HERAEUS INCPriority: Jul 23, 2002Filed: Nov 2, 2004Granted: Feb 26, 2008
Est. expiryJul 23, 2022(expired)· nominal 20-yr term from priority
Inventors:ZHANG WENJUN
B22F 2003/153B22F 3/15C22C 38/02C22C 19/007C22C 38/10B22F 2998/10C22C 19/07C23C 14/3414C22C 38/06C22C 38/002C22C 5/04C22C 19/03C22C 38/12C22C 27/06
74
PatentIndex Score
5
Cited by
34
References
45
Claims

Abstract

The present invention relates to a method of manufacturing sputtering targets doped with non-metal components including boron, carbon, nitrogen, oxygen and silicon. A powder process is utilized whereby alloyed powders, which contain non-metal elements of B/C/N/O/Si and non-metal containing phases of less than ten microns in microstructure, are blended, canned and subjected to hot isostatic press consolidation. The sputtering targets of the present invention avoid spitting problems during sputtering of the target material on a substrate.

Claims

exact text as granted — not AI-modified
1. A method of fabricating sputter targets doped with  containing a non-metallic addition, the method comprising the steps of: 
 (a) preparing or selecting raw material elemental  powders, wherein the powders are selected from the group consisting of Cr- , Co - , Ru - , Ni -  and Fe - based  or  alloys which are doped with  contain at least one non-metal selected from the group consisting of boron, carbon, oxygen and nitrogen, wherein the powders have microstructures of less than about 10 microns;  
 (b) canning;  
 (c) hot isostatic pressing; and  
 (d) machining to form a sputter target.  
 
     
     
       2. The method according to  claim 1 , wherein the elemental  powders or alloys  have microstructures that are substantially homogeneous. 
     
     
       3. The method according to  claim 1 , wherein the powders have microstructures less than 5 microns. 
     
     
       4. The method according to  claim 1 , wherein the powders have microstructures less than 2 microns. 
     
     
       5. The method according to  claim 1 , wherein the hot isostatic pressing is conducted at a temperature between 500° C. to about 1500° C., a pressure between 5 to about 60 ksi and for a time between 0.5 to 12 hours. 
     
     
       6. The method according to  claim 1 , wherein the sputter target contains Fe—Co doped with boron. 
     
     
       7. The method according to  claim 6 , wherein the sputter target contains Fe56at %, Co31at %, and B11at %. 
     
     
       8. The method according to  claim 1 , wherein the sputter target material  contains RuAl doped with oxygen or nitrogen. 
     
     
       9. The method according to  claim 8 , wherein the sputter target contains Ru50at %-Al50at %, doped with oxygen of 5000 ppm. 
     
     
       10. The method according to  claim 8 , wherein the sputter target contains Ru50at %-Al50at %, doped with nitrogen of 4000 ppm. 
     
     
       11. The method according to  claim 1 , wherein the sputter target material  contains NiAl doped with oxygen, nitrogen or boron. 
     
     
       12. The method according to  claim 11 , wherein the sputter target material  contains Ni50at %-Al50at % doped with boron of 2500 ppm. 
     
     
       13. The method according to  claim 11 , wherein the sputter target material  contains Ni50at %-Al50at % doped with N4at %. 
     
     
       14. The method according to  claim 11 , wherein the sputter target material  contains Ni50at %-Al50at % doped with oxygen of 5000 ppm. 
     
     
       15. The method according to  claim 1 , wherein the sputter target material  contains Cr—Mo doped with boron or oxygen. 
     
     
       16. The method according to  claim 15 , wherein the sputter target material  contains Cr80at %-Mo15at % doped with B5at %. 
     
     
       17. The method according to  claim 15 , wherein the sputter target material  contains Cr80at %-Mo20at % doped with oxygen of 6000 ppm. 
     
     
       18. The method according to  claim 1 , wherein the sputter target material  contains Cr—Ti doped with boron or oxygen. 
     
     
       19. The method according to  claim 18 , wherein the sputter target material  contains Cr80at %-Ti16at % doped with B4at %. 
     
     
       20. The method according to  claim 1 , wherein the sputter target material  contains Co—Cr—Pt doped with boron, silicon,  carbon, oxygen  or mixtures thereof. 
     
     
       21. The method according to  claim 20 , wherein the sputter target material  contains Co61at %-Cr15at %-Pt12at % doped with B12at %. 
     
     
       22. The method according to  claim 20 , wherein the sputter target material contains Co56at %-Cr18at %-Pt16at % doped with O3.33at %-Si1.67at %. 
     
     
       23. The method according to  claim 1 , wherein the raw material powders are selected from  the group consisting of Cr-, Co-, Ru-, Ni- and Fe-based alloys,  are optionally alloyed with each other, or with Cr, Al, Pt, Ta, Zr, Mo, Ti, V, Si or W, and further contains at least one non-metallic addition selected from the group consisting of B, C, N, O and Si . 
     
     
       24. A sputter target containing a non- metallic addition, the sputter target being formed by  ( a )  preparing or selecting raw material powders, wherein the powders are selected from the group consisting of Cr - , Co - , Ru - , Ni -  and Fe - based alloys which contain at least one non - metal selected from the group consisting of boron, carbon, oxygen and nitrogen, wherein the powders have microstructures of less than about  10  microns,  ( b )  canning the raw material powders;  ( c )  hot isostatic pressing the canned raw material powders to form a billet; and  ( d )  machining the billet to form the sputter target.   
     
     
       25. The sputter target according to  claim 24 , wherein the powders have microstructures that are substantially homogeneous. 
     
     
       26. The sputter target according to  claim 24 , wherein the powders have microstructures less than  5  microns. 
     
     
       27. The sputter target according to  claim 24 , wherein the powders have microstructures less than  2  microns. 
     
     
       28. The sputter target according to  claim 24 , wherein the hot isostatic pressing is conducted at a temperature between  500 ° C. to about  1500 ° C., a pressure between  5  to about  60  ksi and for a time between  0 . 5  to  12  hours. 
     
     
       29. The sputter target according to  claim 24 , wherein the sputter target contains Fe—Co doped with boron. 
     
     
       30. The sputter target according to  claim 29 , wherein the sputter target contains Fe 56 at%,  Co 31 at %,  and B 11 at %. 
     
     
       31. The sputter target according to  claim 24 , wherein the sputter target contains RuAl doped with oxygen or nitrogen. 
     
     
       32. The sputter target according to  claim 31 , wherein the sputter target contains Ru  50 at%- Al  50 at %,  doped with oxygen of  5000  ppm.   
     
     
       33. The sputter target according to  claim 31 , wherein the sputter target contains Ru  50 at%- Al  50 at %,  doped with nitrogen of  4000  ppm.   
     
     
       34. The sputter target according to  claim 24 , wherein the sputter target contains NiAl doped with oxygen, nitrogen or boron. 
     
     
       35. The sputter target according to  claim 34 , wherein the sputter target contains Ni 50 at%- Al 50 at %  doped with boron of  2500  ppm.   
     
     
       36. The sputter target according to  claim 34 , wherein the sputter target contains Ni 50 at%- Al 50 at %  doped with N 4 at %. 
     
     
       37. The sputter target according to  claim 34 , wherein the sputter target contains Ni 50 at%- Al 50 at %  doped with oxygen of  5000  ppm.   
     
     
       38. The sputter target according to  claim 24 , wherein the sputter target contains Cr—Mo doped with boron or oxygen. 
     
     
       39. The sputter target according to  claim 38 , wherein the sputter target contains Cr 80 at%- Mo 15 at %  doped with B 5 at %. 
     
     
       40. The sputter target according to  claim 38 , wherein the sputter target contains Cr 80 at%- Mo 20 at %  doped with oxygen of  6000  ppm.   
     
     
       41. The sputter target according to  claim 24 , wherein the sputter target contains Cr—Ti doped with boron or oxygen. 
     
     
       42. The sputter target according to  claim 41 , wherein the sputter target contains Cr 80 at%- Ti 16 at %  doped with B 4 at %. 
     
     
       43. The sputter target according to  claim 24 , wherein the sputter target contains Co—Cr—Pt doped with boron, carbon or mixtures thereof. 
     
     
       44. The sputter target according to  claim 43 , wherein the sputter target contains Co 61 at%- Cr 15 at %- Pt 12 at %  doped with B 12 at %. 
     
     
       45. The sputter target according to  claim 24 , wherein the group consisting of Cr- , Co - , Ru - , Ni -  and Fe - based alloys are optionally alloyed with each other, or with Cr, Al, Pt, Ta, Zr, Mo, Ti, V, Si or W.

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