Multi-temperature processing

Abstract

The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.

1. A method of etching a substrate in the manufacture of a device, said method comprising steps of:
 placing a substrate having a film thereon on a substrate holder in a chamber, said substrate holder having a selected thermal mass; and    performing a first etching of a first portion of said film at a first temperature and performing a second etching of a second portion of said film at a second temperature, said first temperature being different from said second temperature;    wherein said selected thermal mass allows a change from said first temperature to said second temperature within a characteristic time period to process said film.    
     
     
       2. The method of  claim 1  wherein said first temperature is changed to said second temperature by a heat transfer means coupled to said substrate holder. 
     
     
       3. The method of  claim 1  wherein said change in temperature is an insitu process during said first etching step and said second etching step. 
     
     
       4. The method of  claim 1  wherein said first etching and said second etching are conducted in a substantially constant plasma environment. 
     
     
       5. The method of  claim 1  wherein said first temperature is higher than said second temperature. 
     
     
       6. The method of  claim 1  wherein said first temperature is lower than said second temperature. 
     
     
       7. The method of  claim 1  wherein said first etching comprises radiation. 
     
     
       8. The method of  claim 1  wherein said second etching comprises radiation. 
     
     
       9. The method of  claim 1  wherein said first etching is an ion bombardment aided process. 
     
     
       10. The method of  claim 1  wherein said second etching is an ion bombardment aided process. 
     
     
       11. The method of  claim 1  wherein said first portion of said film is etched before said second portion of said film. 
     
     
       12. The method of  claim 1  wherein said second portion of said film is etched before said first portion of said film. 
     
     
       13. A method of etching a substrate in the manufacture of a device, the method comprising:
   placing a substrate having a film thereon on a substrate holder in a chamber, the substrate holder having a selected thermal mass;        setting the substrate holder to a selected first substrate holder temperature with a heat transfer device;        etching a first portion of the film while the substrate holder is at the selected first substrate holder temperature;        with the heat transfer device, changing the substrate holder temperature from the selected first substrate holder temperature to a selected second substrate holder temperature; and        etching a second portion of the film while the substrate holder is at the selected second substrate holder temperature;        wherein the thermal mass of the substrate holder is selected for a predetermined temperature change within a specific interval of time during processing; the predetermined temperature change comprises the change from the selected first substrate holder temperature to the selected second substrate holder temperature, and the specified time interval comprises the time for changing from the selected first substrate holder temperature to the selected second substrate holder temperature.     
     
     
       14. The method of  claim 13  wherein the second portion of the film comprises a material composition that is different from the material composition of the first portion of the film. 
     
     
       15. The method of  claim 13  wherein the change from the first substrate holder temperature to the second substrate holder temperature is an in- situ process during the first portion etching and the second portion etching.   
     
     
       16. The method of  claim 13  wherein the etching of the first portion of the film and the etching of the second portion of the film are conducted in a substantially constant plasma environment. 
     
     
       17. The method of  claim 13  wherein etching at least one of the portions of the film comprises radiation. 
     
     
       18. The method of  claim 13  wherein etching at least one of the portions of the film is an ion bombardment aided process. 
     
     
       19. The method of  claim 13  wherein:
   a first substrate etching temperature corresponds to the first substrate holder temperature;        a second substrate etching temperature corresponds to the second substrate holder temperature; and        the first and the second substrate etching temperatures are in a known relationship to the first and the second substrate holder temperatures.     
     
     
       20. The method of  claim 19  wherein the first etching temperature is within approximately one degree centigrade of the first substrate holder temperature and the second etching temperature is within approximately one degree centigrade of the second substrate holder temperature. 
     
     
       21. The method of  claim 13  wherein:
   a first substrate etching temperature corresponds to the first substrate holder temperature;        a second substrate etching temperature corresponds to the second substrate holder temperature;        the first substrate etching temperature is higher than the second substrate etching temperature; and        the first portion of the film is etched before the second portion of the film.     
     
     
       22. The method of  claim 13  wherein:
   a first substrate etching temperature corresponds to the first substrate holder temperature;        a second substrate etching temperature corresponds to the second substrate holder temperature;        the first substrate etching temperature is lower than the second substrate etching temperature; and        the first portion of the film is etched before the second portion of the film.     
     
     
       23. The method of  claim 13  wherein the substrate holder comprises an electrostatic support chuck having a surface for supporting a substrate in a reaction chamber, the electrostatic support chuck overlays a heat exchange region, and the heat exchange region includes at least one fluid passage through which a fluid can be circulated to heat and/or cool the substrate holder. 
     
     
       24. The method of  claim 23  wherein the heat exchange region includes at least two separate fluid passages, each fluid passage being configured to have an independent inlet and an independent outlet. 
     
     
       25. The method of  claim 13  wherein the substrate holder heat transfer device includes a plurality of heating elements. 
     
     
       26. The method of  claim 25  wherein the heating elements are configured to selectively heat one or more zones of the substrate holder. 
     
     
       27. A method of etching a substrate in the manufacture of a device, the method comprising:
   heating a substrate holder to a first substrate holder temperature with a heat transfer device, the substrate holder having at least one temperature sensing unit,        placing a substrate having a film thereon on the substrate holder in a chamber;        etching a first portion of the film at a selected first substrate temperature; and        etching a second portion of the film at a selected second substrate temperature, the selected second substrate temperature being different from the selected first substrate temperature;        wherein substrate temperature is changed from the selected first substrate temperature to the selected second substrate temperature, using a measured substrate temperature, within a preselected time interval for processing, and at least the first substrate temperature or the second substrate temperature, in single or in combination, is above room temperature.     
     
     
       28. The method of  claim 27  wherein a continuous etching process comprises etching the first portion of the film and etching the second portion of the film. 
     
     
       29. The method of  claim 27  wherein the substrate temperature change is by at least heat transfer with the substrate using at least an electrostatic chuck. 
     
     
       30. The method of  claim 27  wherein the substrate temperature change is by transferring heat energy using at least a pressure of gas behind said substrate. 
     
     
       31. The method of  claim 27  wherein the first substrate temperature is changed to the second substrate temperature by transferring energy using at least radiation. 
     
     
       32. The method of  claim 27  wherein changing the substrate temperature comprises selectively transferring energy in the form of heat from a substrate temperature control system to the substrate holder. 
     
     
       33. The method of  claim 27  wherein changing the selected first substrate temperature to the selected second substrate temperature is an in- situ process while etching the first film portion and etching the second film portion.   
     
     
       34. The method of  claim 27  wherein the second portion of the film comprises a material composition that is different from the material composition of the first portion of the film. 
     
     
       35. The method of  claim 27  wherein etching at least one portion of the film comprises radiation. 
     
     
       36. The method of  claim 27  wherein etching at least one portion of the film comprises an ion bombardment aided process. 
     
     
       37. A method of processing a substrate during the manufacture of a device, the method comprising:
   placing a substrate having a film thereon on a substrate holder within a chamber of a plasma discharge apparatus, the plasma discharge apparatus comprising: a substrate temperature control system comprising a substrate temperature sensor and a substrate temperature control circuit operable to adjust the substrate temperature to a predetermined substrate temperature value with a first heat transfer process; and a substrate holder temperature control system comprising a substrate holder temperature sensor and a substrate holder temperature control circuit operable to adjust the substrate holder temperature to a predetermined substrate holder temperature value with a second heat transfer process;        performing a first film treatment of a first portion of the film at a selected first substrate temperature;        with the substrate temperature control circuit, changing from the selected first substrate temperature to a selected second substrate temperature, the selected second substrate temperature being different from the selected first substrate temperature; and        performing a second film treatment of a second portion of the film at the selected second substrate temperature;        wherein the substrate holder is heated above room temperature during at least one of the first or the second film treatments, and the substrate temperature control circuit is operable to change the substrate temperature from the selected first substrate temperature to the selected second substrate temperature within a preselected time period to process the film.     
     
     
       38. The method of  claim 37  wherein the substrate temperature control circuit comprises the substrate holder temperature control circuit. 
     
     
       39. The method of  claim 37  wherein the substrate holder temperature control circuit comprises the substrate temperature control circuit. 
     
     
       40. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises the substrate temperature being less than the substrate holder temperature. 
     
     
       41. The method of  claim 37  wherein the second portion of the film comprises a material composition that is different from the material composition of the first portion of the film. 
     
     
       42. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises selectively transferring heat energy from the substrate holder to the substrate. 
     
     
       43. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises selectively transferring heat energy from the substrate to the substrate holder. 
     
     
       44. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises maintaining the temperature of the substrate holder above room temperature and selectively transferring heat energy from the substrate into the substrate holder. 
     
     
       45. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises selectively transferring energy in the form of heat to the substrate holder with the substrate temperature control circuit and maintaining the substrate holder temperature above room temperature with the substrate holder control circuit. 
     
     
       46. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises etching. 
     
     
       47. The method of  claim 37  wherein at least one film treatment, selected from the first film treatment and the second film treatment, comprises chemical vapor deposition. 
     
     
       48. The method of  claim 37  wherein at least one film treatment comprises maintaining the substrate temperature at a selected value from about  300  to  500  degrees centigrade. 
     
     
       49. The method of  claim 37  wherein the first temperature is changed to the second temperature by transferring heat using at least a pressure of gas behind the substrate. 
     
     
       50. The method of  claim 37  wherein the first substrate temperature is changed to the second substrate temperature by transferring energy using at least radiation. 
     
     
       51. A method of processing a substrate in the manufacture of a device, the method comprising:
   placing a substrate having a film thereon on a substrate holder in a processing chamber; the processing chamber comprising the substrate holder, a substrate control circuit operable to adjust the substrate temperature, a substrate holder temperature sensor, and a substrate holder control circuit operable to maintain the substrate holder temperature;        performing a first etching of a first portion of the film at a selected first substrate temperature;        performing a second etching of a second portion of the film at a selected second substrate temperature, the second temperature being different from the first temperature;        wherein at least one of the film portions is etched while heat is being transferred to the substrate holder with the substrate holder control circuit; and        the substrate temperature control circuit effectuates the change from the first substrate temperature to the second substrate temperature within a preselected time period.     
     
     
       52. The method of  claim 51  wherein the etching of at least one of the film portions comprises heat flow from the substrate holder into the substrate. 
     
     
       53. The method of  claim 51  wherein the etching of at least one of the film portions comprises heat flow from the substrate into the substrate holder. 
     
     
       54. The method of  claim 51  wherein the etching of at least one of the film portions comprises maintaining the temperature of the substrate in the range of  50 ° C. to  100 ° C. 
     
     
       55. The method of  claim 51  wherein the preselected time period to change from the first substrate temperature to the second substrate temperature subtends less than about  5  percent of a total etching process time. 
     
     
       56. A method for processing layers which are included in a stack of layers positioned on a substrate, the method comprising:
   placing the substrate on a substrate holder;        sensing a substrate holder temperature,        etching at least a portion of a first silicon - containing layer in a chamber while the substrate is maintained at a selected first substrate temperature; and        etching at least a portion of a second silicon - containing layer in the chamber while the substrate is maintained at a selected second substrate temperature;        wherein the substrate holder is heated to a temperature operable to maintain at least one of the selected first and the selected second substrate temperatures above  49 ° C., and the substrate temperature is changed from the first substrate temperature to the second substrate temperature with a control circuit operable to effectuate the changing within a preselected time period that is less than the overall process time associated with the etching the first silicon - containing layer and the second silicon - containing layer.     
     
     
       57. The method of  claim 56  wherein the change from the first substrate temperature to the second substrate temperature occurs within less than about  5  percent of the total etching process time. 
     
     
       58. The method of  claim 56  wherein at least one layer is etched in a chlorine- containing ambient.   
     
     
       59. The method of  claim 56  wherein at least one silicon- containing layer is etched in a chlorine - containing ambient;      the first layer is a polysilicon layer, the second layer is a silicide layer and the stack includes an oxide layer;        the second substrate temperature is higher than the first substrate temperature; and        a portion of at least one layer is selectively etched relative to the oxide layer.     
     
     
       60. A method for manufacturing a device comprising an integrated circuit, the method comprising:
   transferring a substrate comprising a stack of layers including a silicide layer into a chamber, the chamber comprising a substrate holder;        sensing the substrate holder temperature;        heating the substrate holder with a substrate holder control circuit and a heating device to maintain the substrate holder at a temperature that is operable to effectuate a substrate temperature above room temperature while processing the substrate;        processing the substrate on the substrate holder at a first substrate temperature; and        processing the substrate on the substrate holder at a second substrate temperature to etch at least a portion of the silicide layer;        wherein the first substrate temperature is different from the second substrate temperature and the first substrate temperature is changed to the second substrate temperature with a substrate temperature control circuit within a preselected time to etch the silicide layer.     
     
     
       61. The method of  claim 60  wherein the first substrate temperature is changed to the second substrate temperature within a selected period of time by at least heat transfer to the substrate using at least an electrostatic chuck. 
     
     
       62. The method of  claim 60  wherein the first substrate temperature is changed to the second substrate temperature by transferring heat using at least a pressure of gas behind the substrate. 
     
     
       63. The method of  claim 60  wherein the first substrate temperature is changed to the second substrate temperature by transferring energy using at least radiation. 
     
     
       64. The method of  claim 13  wherein the change from the first substrate holder temperature to the second substrate holder temperature is effectuated with a control circuit. 
     
     
       65. The method of  claim 13  wherein the substrate holder reaches the second substrate holder temperature at approximately a selected time. 
     
     
       66. The method of  claim 27  wherein the first substrate holder temperature is above room temperature. 
     
     
       67. The method of  claim 37  wherein at least one film treatment comprises transferring energy from the substrate holder with a heat transfer device. 
     
     
       68. The method of  claim 51  wherein the second portion of the film comprises a material composition different from the first portion of the film. 
     
     
       69. The method of  claim 51  wherein the substrate temperature is the second substrate temperature at approximately a selected time. 
     
     
       70. The method of  claim 60  comprising processing the substrate while maintaining the substrate temperature at a selected value within  180  to  220  degrees centigrade. 
     
     
       71. The method of  claim 60  comprising processing the substrate while maintaining the substrate temperature at a selected value within  50  to  100  degrees centigrade.