Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes at least one semiconductor structure having a plurality of external connection portions on an upper surface, and an insulating member which is made of a resin containing reinforcing materials and arranged on a side of the semiconductor structure. An insulating film is formed on the upper surface of the semiconductor structure, except the external connection portions, and on an upper surface of the insulating member. A plurality of upper wirings each of which has a connection pad portion are located on an upper side of the insulating film and electrically connected to a corresponding one of the external connection portions of the semiconductor structure. The connection pad portion of at least one of the upper wirings is arranged above an upper surface of the insulating member.

1. A semiconductor device comprising:
 at least one semiconductor structure having a plurality of external connection portions on an upper surface;  
 an insulating member which is made of a resin containing reinforcing materials and arranged on a side of the semiconductor structure;  
 an insulating film which is formed on the upper surface of the semiconductor structure, except for at least a portion of each of the external connection portions, and on an upper surface of the insulating member; and  
 a plurality of upper wirings, each of which has a connection pad portion which is located on an upper side of  above the insulating film, and each of which is electrically connected to a corresponding one of the external connection portions of the semiconductor structure, the connection pad portion of at least one of the upper wirings being arranged above an  the upper surface of the insulating member.  
 
     
     
       2. A device according to  claim 1 , wherein said at least one semiconductor structure includes a plurality of semiconductor structures. 
     
     
       3. A device according to  claim 1 , wherein the upper surface of the insulating member is substantially flush with that  the upper surface of the semiconductor structure. 
     
     
       4. A device according to  claim 1 , wherein the upper surface of the insulating member is located on a lower side of that  below the upper surface of the semiconductor structure. 
     
     
       5. A device according to  claim 1 , wherein the insulating film includes a resin and reinforcing materials contained in the resin. 
     
     
       6. A device according to  claim 5 , wherein another insulating film made of the same resin as that of  the insulating film is formed between the semiconductor structure and the insulating member. 
     
     
       7. A device according to  claim 1 , wherein the insulating member has a frame shape having at least one opening portion, and the semiconductor structure is arranged in the opening portion. 
     
     
       8. A device according to  claim 1 , wherein the semiconductor structure comprises:
 a semiconductor substrate which has a plurality of connection pads on the  an upper surface thereof,  
 theanother insulating film, which has openings tothrough which the connection pads of the semiconductor substrate are exposed, and is formed to coverwhich covers the upper surface of the semiconductor substrate,  
 a plurality of wirings, each of which has a connection pad portion that is located above said another insulating film and is electrically connected to a corresponding one of the connection pad portions  pads of the semiconductor substrate through one of the opening  openings of the  said another insulating film,and located on the insulating film,   
 a plurality of columnar electrodes, each of which is formed on one of the connection pad portion  portions of the wiring  wirings and constructs  forms one of the external connection portion  portions of the semiconductor structure, and  
 a sealing film which is formed around each columnar electrode on the semiconductor substrate  and the wirings of the semiconductor structure.  
 
     
     
       9. A device according to  claim 1 , wherein a solder ball is formed on the connection pad portion of the at least one of the upper wiring located  wirings arranged above the upper surface of the insulating member. 
     
     
       10. A device according to  claim 9 , wherein said plurality  each of the upper wirings include  includes at least one upper side wiring located on an upper side  and at least one lower side wiring located on a lower side  below the at least one upper side wiring, and the upper side wiring comprises the connection pad portion on which the solder ball is formed. on the connection pad portion of the upper side wiring located on the upper side. 
     
     
       11. A semiconductor device comprising:
 a semiconductor structure including: (i) a semiconductor substrate, (ii) a plurality of connection pads provided on the semiconductor substrate, (iii) an insulating layer which covers a surface of the semiconductor substrate and which has openings to expose at least portions of the connection pads on the semiconductor substrate, (iv) a protective layer which is provided above the insulating layer, and which has openings corresponding to the openings in the insulating layer to expose at least portions of the connection pads, (v) a plurality of wirings, each of which includes a connection pad portion that is located above the protective layer and that is electrically connected to a corresponding one of the connection pads on the semiconductor substrate through one of the openings of the insulating layer and one of the openings in protective layer, (vi) a plurality of external electrodes, each of which is provided on a corresponding one of the connection pad portions, and (vii) a sealing film which is provided above the protective layer and around each of the external electrodes and the wirings;    an insulating member which is made of a resin containing reinforcing materials and arranged on a side of the semiconductor structure;    an insulating film which is provided on an upper surface of the semiconductor structure and on an upper surface of the insulating member, and which exposes at least a portion of each of the external electrodes; and    a plurality of upper wirings, each of which has a connection pad portion which is located above the insulating film, and each of which is electrically connected to a corresponding one of the external electrodes of the semiconductor structure.   
     
     
       12. A device according to  claim 11 , wherein the insulating film includes a resin and reinforcing materials contained in the resin. 
     
     
       13. A device according to  claim 12 , wherein the insulating member has a frame shape having at least one opening portion, and the semiconductor structure is arranged in the opening portion. 
     
     
       14. A device according to  claim 13 , wherein the upper surface of the insulating member is substantially flush with the upper surface of the semiconductor structure, and a lower surface of the insulating member is substantially flush with a lower surface of the semiconductor structure. 
     
     
       15. A device according to  claim 11 , further comprising a base plate having a rectangular planar shape so as to carry the semiconductor structure and the insulating member. 
     
     
       16. A device according to  claim 15 , further comprising an adhesive layer for coupling the semiconductor structure and the base plate, wherein the adhesive layer is intervened between the semiconductor structure and the base plate. 
     
     
       17. A semiconductor device comprising:
 a semiconductor structure including: (i) a semiconductor substrate, (ii) a plurality of connection pads provided on the semiconductor substrate, (iii) an insulating layer which covers a surface of the semiconductor substrate and which has openings to expose at least portions of the connection pads on the semiconductor substrate, (iv) a plurality of wirings, each of which includes a connection pad portion that is located above the insulating layer and that is electrically connected to a corresponding one of the connection pads on the semiconductor substrate through one of the openings of the insulating layer, (v) a plurality of external electrodes, each of which is provided on a corresponding one of the connection pad portions, and (vi) a sealing film which is provided above the insulating layer and around each of the external electrode and the wirings, the sealing film having a periphery that is the same size as a periphery of the semiconductor substrate and that has a planar shape that is coincident with a planar shape of the periphery of the semiconductor substrate;    an insulating member which is made of a resin containing reinforcing materials and arranged on a side of the semiconductor structure;    an insulating film which is provided on an upper surface of the semiconductor structure and on an upper surface of the insulating member, and which exposes at least a portion of each of the external electrodes; and    a plurality of upper wirings, each of which has a connection pad portion which is located above the insulating film, and each of which is electrically connected to a corresponding one of the external electrodes of the semiconductor structure.   
     
     
       18. A device according to  claim 17 , wherein the upper surface of the insulating member is substantially flush with the upper surface of the semiconductor structure. 
     
     
       19. A device according to  claim 17 , wherein the insulating film includes a resin and reinforcing materials contained in the resin. 
     
     
       20. A device according to  claim 19 , wherein the insulating member has a frame shape having at least one opening portion, and the semiconductor structure is arranged in the opening portion. 
     
     
       21. A device according to  claim 20 , wherein the upper surface of the insulating member is substantially flush with the upper surface of the semiconductor structure, and a lower surface of the insulating member is substantially flush with a lower surface of the semiconductor structure. 
     
     
       22. A device according to  claim 17 , further comprising a base plate having a rectangular planar shape so as to carry the semiconductor structure and the insulating member. 
     
     
       23. A device according to  claim 22 , further comprising an adhesive layer for coupling the semiconductor structure and the base plate, wherein the adhesive layer is intervened between the semiconductor structure and the base plate. 
     
     
       24. A device according to  claim 22 , further comprising an adhesive layer for coupling the insulating member and the base plate, wherein the adhesive layer is intervened between the insulating member and the base plate. 
     
     
       25. A semiconductor device comprising:
 a base plate having a rectangular planar shape;    a semiconductor structure which is provided above the base plate and which includes: (i) a semiconductor substrate, (ii) a plurality of external electrodes, which are mounted above the semiconductor substrate, and each of which has an upper surface, and (iii) a sealing film having a periphery that is the same size as a periphery of the semiconductor substrate and that has a planar shape that is coincident with a planar shape of the periphery of the semiconductor substrate;    an insulating member which is arranged above the base plate beside the semiconductor structure, and which has a rectangular frame shape which includes an opening portion in which the semiconductor structure is positioned, an upper surface of the insulating member being substantially flush with an upper surface of the semiconductor structure, and a lower surface of the insulating member being substantially flush with a lower surface of the semiconductor structure;    an insulating film which is provided on the upper surface of the semiconductor structure and on the insulating member, and which exposes at least a portion of the upper surface of each of the external electrodes; and    a plurality of upper wirings, each of which has a connection pad portion which is located above the insulating film, and each of which is electrically connected to a corresponding one of the external electrodes of the semiconductor structure.   
     
     
       26. A device according to  claim 25 , wherein the insulating member is made of a thermosetting resin containing a reinforcing material. 
     
     
       27. A device according to  claim 26 , wherein an upper surface of the sealing film is flush with the upper surface of each of the external electrodes.