Semiconductor device

Abstract

In a semiconductor device in which a semiconductor chip is stacked on a substrate, an interposer chip having wirings is provided under the semiconductor chip. A bonding pad of the semiconductor chip is electrically connected to a bonding terminal provided on the substrate via the interposer chip by wire bonding. The interposer chip prevents a semiconductor element formed in the semiconductor chip from deteriorating in terms of an electric property and from being physically damaged. Further, the wire bonding strength does not drop. Moreover, it is possible to form a fine wiring pitch for relaying a wire-bonding wire.

1. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising
 an interposer chip on which one or more connection wirings are formed,  
 at least one pair of bonding pads provided on the interposer chip and connected by the connection wiring(s), wherein:  
 the externally leading electrode provided on at least one of the semiconductor chips is electrically connected to a first bonding pad of the at least one pair of bonding pads,  
 a second bonding pad of the at least one pair of bonding pads is electrically connected to an electrode provided on the stacking base or on another of the semiconductor chips, and  
 the first bonding pad is provided on the interposer chip closer to the externally leading electrode than the second bonding pad.  
 
     
     
       2. The semiconductor device as set forth in  claim 1 , wherein the interposer chip is formed by using a wafer made of the same material and having the same structure as a wafer used in forming the semiconductor chip. 
     
     
       3. The semiconductor device as set forth in  claim 1 , wherein the interposer chip is formed by using the same device as a device for forming the semiconductor chip. 
     
     
       4. The semiconductor device as set forth in  claim 1 , wherein the semiconductor chip is covered by a surface protection film so that the externally leading electrode is uncovered. 
     
     
       5. The semiconductor device as set forth in  claim 1 , wherein at least one of the semiconductor chips is stacked at a position upper than the interposer chip in a stacking direction. 
     
     
       6. The semiconductor device as set forth in  claim 1 , wherein the interposer chip has no functional elements formed thereon. 
     
     
       7. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
 an interposer chip on which one or more connection wirings are formed, wherein:  
 the externally leading electrode provided on at least one of the semiconductor chips is connected to the connection wiring of the interposer chip by wire bonding,  
 the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, relays the connection wiring so as to be  is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base and/or another of the semiconductor chips; and  
 wherein at least one of the semiconductor chips is stacked at a position upper than the interposer chip in a stacking direction; and  
   wherein said one or more connection wirings provided on the interposer chip include:    
   one or more first bonding pads electrically connected to external electrodes, provided at a position lower than the interposer chip in the stacking direction, by wire bonding;    
   one or more second bonding pads electrically connected to electrodes, provided at a position upper than the interposer chip in the stacking direction, by wire bonding;    
   the number of the connection wirings provided on the interposer chip is plural; and    
   the connection wirings are disposed so as not to cross each other .  
 
     
     
       8. The semiconductor device as set forth in  claim 7 , wherein said one or more connection wirings provided on the interposer chip include:
 one or more first bonding pads electrically connected to external electrodes, provided at a position lower than the interposer chip in the stacking direction, by wire bonding; and    one or more second bonding pads electrically connected to electrodes, provided at a position upper than the interposer chip in the stacking direction, by wire bonding.    
     
     
       9. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising
 an interposer chip on which one or more connection wirings are formed, wherein:  
 the externally leading electrode provided on at least one of the semiconductor chips is connected to the connection wiring of the interposer chip by wire bonding,  
 the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, relays the connection wiring so as to be electrically connected to an electrode of a wiring provided on the stacking base and/or another of the semiconductor chips; and  
 wherein the interposer chip and the semiconductor chip are stacked on the stacking base or another of the semiconductor chips ( 2 ) so as to be disposed side by side.  
 
     
     
       10. The semiconductor device as set forth in  claim 9 , wherein
 said one or more connection wirings provided on the interposer chip include:  
 one or more first bonding pads electrically connected to external electrodes, provided at a position lower than the interposer chip in the stacking direction, by wire bonding; and  
 one or more second bonding pads electrically connected to electrodes, provided at a position upper than the interposer chip in the stacking direction, by wire bonding.  
 
     
     
       11. The semiconductor device as set forth in  claim 8 , wherein:
 the number of the connection wirings provided on the interposer chip is plural, and    the connection wirings are disposed so as not to cross each other.    
     
     
       12. The semiconductor device as set forth in  claim 10 , wherein:
 the number of the connection wirings provided on the interposer chip is plural, and  
 the connection wirings are disposed so as not to cross each other.  
 
     
     
       13. The semiconductor device as set forth in claim  11    7 , wherein an order in which the first bonding pads are disposed is different from an order in which the second bonding pads connected to the first bonding pads by the connection wirings. 
     
     
       14. The semiconductor device as set forth in  claim 12 , wherein an order in which the first bonding pads are disposed is different from an order in which the second bonding pads connected to the first bonding pads by the connection wirings. 
     
     
       15. The semiconductor device as set forth in  claim 8 , wherein the number of the connection wirings provided on the interposer chip is plural, and the connection wirings are disposed in a roundabout manner. 
     
     
       16. The semiconductor device as set forth in  claim 10 , wherein the number of the connection wirings provided on the interposer chip is plural, and the connection wirings are disposed in a roundabout manner. 
     
     
       17. The semiconductor device as set forth in  claim 8 , wherein:
 one or more additional bonding pads are provided on the connection wiring of the interposer chip so as to be positioned between the first bonding pad and the second bonding pad, and    two arbitrary bonding pads out of the first bonding pad, the second bonding pad, and the additional bonding pad are connected to external electrodes by wire bonding.    
     
     
       18. The semiconductor device as set forth in  claim 10 , wherein:
 one or more additional bonding pads are provided on the connection wiring of the interposer chip so as to be positioned between the first bonding pad and the second bonding pad, and  
 two arbitrary bonding pads out of the first bonding pad, the second bonding pad, and the additional bonding pad are connected to external electrodes by wire bonding.  
 
     
     
       19. The semiconductor device as set forth in claim  17    30 , wherein:
 the number of the connection wirings provided on the interposer chip is plural, and  
 the connection wirings are disposed so as not to cross each other.  
 
     
     
       20. The semiconductor device as set forth in  claim 18 , wherein: the number of the connection wirings provided on the interposer chip is plural, and the connection wirings are disposed so as not to cross each other. 
     
     
       21. The semiconductor device as set forth in  claim 19 , wherein at least two orders out of (i) an order in which the first bonding pads are disposed, (ii) an order in which the second bonding pads connected to the first bonding pads by the connection wirings are disposed, and (iii) an order in which the additional bonding pads connected to the second bonding pads by the connection wirings are disposed, are different from each other. 
     
     
       22. The semiconductor device as set forth in  claim 20 , wherein at least two orders out of (i) an order in which the first bonding pads are disposed, (ii) an order in which the second bonding pads connected to the first bonding pads by the connection wirings are disposed, and (iii) an order in which the additional bonding pads connected to the second bonding pads by the connection wirings are disposed, are different from each other. 
     
     
       23. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
   an interposer chip on which a plurality of connection wirings are formed, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is connected to at least one of the connection wirings of the interposer chip,        the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base or another of the semiconductor chips,        said plurality of connection wirings include (i) first bonding pads electrically connected to the electrode of the wiring provided on the stacking base or said another of the semiconductor chips, and (ii) second bonding pads electrically connected to the external leading electrode provided in the semiconductor chip,        an order in which the first bonding pads are disposed is different from an order in which the second bonding pads connected to the first bonding pads by the connection wirings are disposed, and        at least one of the semiconductor chips is stacked at a position upper than the interposer chip in a stacking direction.     
     
     
       24. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
   an interposer chip on which a plurality of connection wirings are formed, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is connected to at least one of the connection wirings of the interposer chip,        the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base or another of the semiconductor chips,        the connection wirings are disposed in a roundabout manner, and        at least one of the semiconductor chips is stacked at a position upper than the interposer chip in a stacking direction.     
     
     
       25. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
   an interposer chip on which a plurality of connection wirings are formed; and        at least one pair of bonding pads are provided on the interposer chip and connected by the connection wirings,        wherein:        the externally leading electrode provided on at least one of the semiconductor chips is electrically connected to a first bonding pad of the at least one pair of bonding pads,        a second bonding pad of the at least one pair of bonding pads is electrically connected to an electrode provided on the stacking base or on another of the semiconductor chips,        the first bonding pad is provided on the interposer chip closer to the externally leading electrode than the second bonding pad, and        in a case where said at least one pair of bonding pads includes two or more pairs of bonding pads, an order in which first bonding pads of said two or more pairs of bonding pads are disposed is different from an order in which second bonding pads of said two or more pairs of bonding pads are disposed, the second bonding pads being connected to the first bonding pads by the connection wirings.     
     
     
       26. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
   an interposer chip on which a plurality of connection wirings are formed; and        at least one pair of bonding pads provided on the interposer chip and connected by the connection wirings, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is electrically connected to a first bonding pad of the at least one pair of bonding pads,        a second bonding pad of the at least one pair of bonding pads is electrically connected to an electrode provided on the stacking base or on another of the semiconductor chips,        the first bonding pad is provided on the interposer chip closer to the externally leading electrode than the second bonding pads, and        the connection wirings are disposed in a roundabout manner.     
     
     
       27. A semiconductor device, in which one or more semiconductor chips, each having an externally leading electrode, are stacked on a stacking base, comprising:
   an interposer ship on which a plurality of connection wirings are formed, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is connected to at least one of the connection wirings of the interposer chip,        the external leading electrode, connected to the connection wiring, which is provide on the semiconductor chip, is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base or another of the semiconductor chips,        said plurality of connection wirings include (i) first bonding pads electrically connected to the electrode of the wiring provided on the stacking base or said another of the semiconductor chips, and (ii) second bonding pads electrically connected to the external leading electrode provided in the first semiconductor chip,        an order in which the first bonding pads are disposed is different from an order in which the second bonding pads connected to the first bonding pads by the connection wirings are disposed, and        the interposer chip and the semiconductor chip are stacked on the stacking base or another of the semiconductor chips so as to be disposed side by side.     
     
     
       28. A semiconductor device in which one or more semiconductor chips, each having an externally leading electrode, are stacked on a stacking base, comprising:
   an interposer chip on which a plurality of connection wirings are formed, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is connected to at least one of the connection wirings of the interposer chip,        the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base or another of the semiconductor chips,        the connection wirings are disposed in a roundabout manner, and        the interposer chip and the semiconductor chip are stacked on the stacking base or another of the semiconductor chips so as to be disposed side by side.     
     
     
       29. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
   an interposer chip on which one or more connection wirings are formed, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is connected to the connection wiring of the interposer chip by wire bonding,        the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base and/or another of the semiconductor chips;        wherein at least one of the semiconductor chips is stacked at a position upper than the interposer chip in a stacking direction; and        wherein said one or more connection wirings provided on the interposer chip include:        one or more first bonding pads electrically connected to external electrodes, provided at a position lower than the interposer chip in the stacking direction, by wire bonding;        one or more second bonding pads electrically connected to electrodes, provided at a position upper than the interposer chip in the stacking direction, by wire bonding;        the number of the connection wirings provided on the interposer chip is plural; and        the connection wirings are disposed in a roundabout manner.     
     
     
       30. A semiconductor device, in which one or more semiconductor chips each having an externally leading electrode are stacked on a stacking base, comprising:
   an interposer chip on which one or more connection wirings are formed, wherein:        the externally leading electrode provided on at least one of the semiconductor chips is connected to the connection wiring of the interposer chip by wire bonding,        the external leading electrode, connected to the connection wiring, which is provided on the semiconductor chip, is electrically connected by the connection wiring to an electrode of a wiring provided on the stacking base and/or another of the semiconductor chips;        wherein at least one of the semiconductor chips is stacked at a position upper than the interposer chip in a stacking direction; and        wherein said one or more connection wirings provided on the interposer chip include:        one or more first bonding pads electrically connected to external electrodes, provided at a position lower than the interposer chip in the stacking direction, by wire bonding;        one or more second bonding pads electrically connected to electrodes, provided at a position upper than the interposer chip in the stacking direction, by wire bonding;        one or more additional bonding pads are provided on the connection wiring of the interposer chip so as to be positioned between the first bonding pad and the second bonding pad; and        two arbitrary bonding pads out of the first bonding pad, the second bonding pad, and the additional bonding pad are connected to external electrodes by wire bonding.