Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same

Abstract

An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

1. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element constituting  which forms an intermetallic compound of  with Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 
     
     
       2. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element having a standard electrode potential higher than Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 
     
     
       3. The sputter target according to  claim 2 , wherein the sputter target has the first element which is an element constituting an intermetallic compound of Al. 
     
     
       4. A sputter target consisting essentially of 0.001 to 30 at % of at least one first element having a standard electrode potential higher than Al, 0.01 at ppm to 50 at % of H with respect to the amount of the first element, and the balance of Al. 
     
     
       5. The sputter target according to  claim 4 , wherein the sputter target contains the H in a range of 500 wt ppm or below. 
     
     
       6. A sputter target, consisting essentially of at least one first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al. 
     
     
       7. A sputter target consisting essentially of  0 . 001  to  30  at %  of at least one first element selected from the group consisting of Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy and Er, at least one second element selected from the group consisting of  0 . 01  at ppm to  3  at  %  of C with respect to the amount of the first element,  0 . 01  at ppm to  7 . 5  at  %  of O with respect to the amount of the first element,  0 . 01  at pm to  7 . 5  at  %  of N with respect to the amount of the first element, and  0 . 01  at ppm to  7 . 5  at  %  of H with respect to the amount of the first element, and the balance of Al.    
     
     
       8. The sputter target according to  claim 7 , wherein the sputter target comprises an intermetallic compound of Al and the first element, and the intermetallic compound is precipitated finely and uniformly in the sputter target.  
     
     
       9. The sputter target according to  claim 8 , wherein the sputter target is formed by applying a quench coagulation method.  
     
     
       10. The sputter target according to  claim 7 , wherein the sputter target contains the C in the range of  3000  at ppm or below with respect to the amount of the first element.  
     
     
       11. The sputter target according to  claim 7 , wherein the sputter target contains the C in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       12. The sputter target according to  claim 7 , wherein the sputter target contains the O in the range of  1 . 5  at %  or below with respect to the amount of the first element.    
     
     
       13. The sputter target according to  claim 7 , wherein the sputter target contains the O in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       14. The sputter target according to  claim 7 , wherein the sputter target contains the N in the range of  1 . 5  at %  or below with respect to the amount of the first element.    
     
     
       15. The sputter target according to  claim 14 , wherein the sputter target is formed by applying a quench coagulation method.  
     
     
       16. The sputter target according to  claim 7 , wherein the sputter target contains the N in the range of  3000  at ppm or below with respect to the amount of the first element.  
     
     
       17. The sputter target according to  claim 16 , wherein the sputter target is formed by applying a quench coagulation method.  
     
     
       18. The sputter target of  claim 7 , wherein the sputter target contains the N in the range of  1500  at pm or below with respect to the amount of the first element.  
     
     
       19. The sputter target according to  claim 18 , wherein the sputter target is formed by applying a quench coagulation method.  
     
     
       20. The sputter target according to  claim 7 , wherein the sputter target contains the H in the range of  1 . 5  at %  or below with respect to the amount of the first element.    
     
     
       21. The sputter target according to  claim 7 , wherein the sputter target contains the H in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       22. A sputter target, consisting essentially of  0 . 001  to  30  at %  of at least one first element selected from the group consisting of Ag, Au, Cu, Ti, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Pd, Ir, Pt, Cd, Si and Pb, at least one second element selected from the group consisting of  0 . 01  at ppm to  3  at  %  of C with respect to the amount of the first element,  0 . 01  at ppm to  7 . 5  at  %  of O with respect to the amount of the first element,  0 . 01  at ppm to  7 . 5  at  %  of N with respect to the amount of the first element, and  0 . 01  at ppm to  7 . 5  at  %  of H with respect to the amount of the first element, the second element comprising the H, and the balance of Al.    
     
     
       23. The sputter target according to  claim 22 , wherein the sputter target contains the H in the range of  1 . 5  at %  or below with respect to the amount of the first element.    
     
     
       24. The sputter target according to  claim 22 , wherein the sputter target contains the H in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       25. The sputter target according to  claim 22 , wherein the sputter target contains the C in the range of  3000  at ppm or below with respect to the amount of the first element.  
     
     
       26. The sputter target according to  claim 22 , wherein the sputter target contains the C in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       27. The sputter target according to  claim 22 , wherein the sputter target contains the O in the range of  1 . 5  at %  or below with respect to the amount of the first element.    
     
     
       28. The sputter target according to  claim 22 , wherein the sputter target contains the O in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       29. The sputter target according to  claim 22 , wherein the sputter target contains the N in the range of  1 . 5  at %  or below with respect to the amount of the first element.    
     
     
       30. The sputter target according to  claim 22 , wherein the sputter target contains the N in the range of  1500  at ppm or below with respect to the amount of the first element.  
     
     
       31. The sputter target according to  claim 7 , wherein the sputter target contains N in a range of  910  at ppm or below with respect to the amount of the first element.  
     
     
       32. The sputter target according to  claim 7 , wherein the sputter target contains N in a range of  420  at ppm or below with respect to the amount of the first element.  
     
     
       33. The sputter target according to  claim 7 , wherein the sputter target contains N in a range of  150  at ppm or below with respect to the amount of the first element.  
     
     
       34. The sputter target according to  claim 7 , wherein the sputter target contains N in a range of  70  at ppm or below with respect to the amount of the first element.