USRE42294EExpiredUtility

Semiconductor integrated circuit designing method and system using a design rule modification

69
Assignee: TOSHIBA KKPriority: Jun 30, 2000Filed: Apr 7, 2004Granted: Apr 12, 2011
Est. expiryJun 30, 2020(expired)· nominal 20-yr term from priority
G06F 30/398H10P 95/00
69
PatentIndex Score
9
Cited by
26
References
28
Claims

Abstract

A method for designing a semiconductor integrated circuit is provided which comprises compacting a design layout of a semiconductor integrated circuit on the basis of a given design rule to obtain a compacted pattern, predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit on the basis of the compacted pattern, obtaining an evaluated value by comparing the predicted pattern with the compacted pattern, deciding whether the evaluated value satisfies a predetermined condition, and modifying the design rule when the evaluated value is decided as not satisfying the predetermined condition.

Claims

exact text as granted — not AI-modified
1. A method for designing a semiconductor integrated circuit, executed by a computer programmed to perform the method, the method comprising:
 compacting a design layout of a semiconductor integrated circuit, using a computer, on the basis of a given design rule of the semiconductor integrated circuit to obtain a compacted pattern;  
 predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit, using a computer, on the basis of the compacted pattern;  
 obtaining an evaluated value, using a computer, by comparing the predicted pattern with the compacted pattern;  
 deciding, using a computer, whether the evaluated value satisfies a predetermined condition; and  
 modifying the design rule, using a computer, when the evaluated value is decided as not satisfying the predetermined condition.  
 
     
     
       2. A method according to  claim 1 , wherein the pattern to be formed at a surface area of a wafer is predicted, using a computer, using data obtained by converting data of the compacted pattern to mask data for photolithography or data for electron beam lithography. 
     
     
       3. A method according to  claim 1 , wherein the pattern to be formed at a surface area of a wafer is predicted, using a computer, using at least one model selected from a first prediction model, second prediction model and third prediction model, the first prediction model being a model for calculating a light exposed state of a resist on the wafer when the compacted pattern is projected on the resist, the second prediction model being a model for calculating a resist pattern configuration after the resist has been developed, and the third prediction model being a model for calculating a wafer surface configuration after the wafer has been work-processed using the resist pattern. 
     
     
       4. A system having a computer readable medium including instructions for designing a semiconductor integrated circuit, comprising:
 means for compacting a design layout of a semiconductor integrated circuit on the basis of a given design rule of the semiconductor integrated circuit to obtain a compacted pattern;  
 means for predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit on the basis of the compacted pattern;  
 means for obtaining an evaluated value by comparing the predicted pattern with the compacted pattern;  
 means for deciding whether the evaluated value satisfies a predetermined condition; and  
 means for modifying the design rule when the evaluated value is decided as not satisfying the predetermined condition.  
 
     
     
       5. A system according to  claim 4 , wherein the pattern to be formed at a surface area of a wafer is predicted using data obtained by converting data of the compacted pattern to mask data for lithography or data for electron beam lithography. 
     
     
       6. A system according to  claim 4 , wherein the pattern to be formed at a surface area of a wafer is predicted using at least one model selected from a first prediction model, second prediction model and third prediction model, the first prediction model being a model for calculating a light exposed state of a resist on the wafer when the compacted pattern is projected on the resist, the second prediction model being a model for calculating a resist pattern configuration after the resist has been developed, and the third prediction model being a model for calculating a wafer surface configuration after the wafer has been work-processed using the resist pattern. 
     
     
       7. A non- transitory  computer readable storage medium configured to store  encoded with a computer program product storing program instructions for causing a computer to compact a design layout of a semiconductor integrated circuit on the basis of a given design rule of the semiconductor integrated circuit to obtain a compacted pattern, causing the computer to predict a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit on the basis of the compacted pattern, causing the computer to obtain an evaluated value by comparing the predicted pattern with the compacted pattern, causing the computer to decide whether the evaluated value satisfies a predetermined condition, and causing the computer to modify the design rule when the evaluated value is decided as not satisfying the predetermined condition the computer providing a modified design layout of a semiconductor integrated circuit based on the modified design rule. 
     
     
       8. A method for preparing a design rule for a semiconductor integrated circuit, executed by a computer programmed to perform the method, the method comprising:
   obtaining a pattern of a design layout, using a computer, on the basis of a given design rule of the semiconductor integrated circuit;        predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit, using a computer, on the basis of the obtained pattern;        obtaining an evaluated value, using a computer, by comparing the predicted pattern with the obtained pattern;        deciding whether the evaluated value satisfies a predetermined condition, using a computer;        modifying the given design rule, using a computer, when the evaluated value is decided as not satisfying the predetermined condition; and        determining the given design rule as a fixed design rule for the semiconductor integrated circuit, using a computer, when the evaluated value is decided as satisfying the predetermined condition.     
     
     
       9. A method according to  claim 8 , wherein the pattern to be formed at a surface area of a wafer is predicted, using a computer, using data obtained by converting data of the obtained pattern to mask data for photolithography or data for electron beam lithography. 
     
     
       10. A method according to  claim 8 , wherein the pattern formed at a surface area of a wafer is predicted, using a computer, using at least one model selected from a first prediction model, a second prediction model and a third prediction model, the first prediction model being a model for calculating a light exposed state of a resist on the wafer when the obtained pattern is projected on the resist, the second prediction model being a model for calculating a resist pattern configuration after the resist has been developed, and the third prediction model being a model for calculating a wafer surface configuration after the wafer has been work- processed using the resist pattern configuration.   
     
     
       11. A layout used for producing a semiconductor integrated circuit, comprising a layout pattern designed using the design rule prepared by the method according to  claim 8 , instructions for executing the method being stored on a computer readable medium, wherein the layout is associated with the layout pattern produced using the prepared design rule. 
     
     
       12. A layout according to  claim 11 , wherein the layout pattern includes a standard cell pattern. 
     
     
       13. A layout according to  claim 11 , wherein the layout pattern includes a pattern for placement and routing. 
     
     
       14. A method for designing a layout for a semiconductor integrated circuit, executed by a computer programmed to perform the method, the method comprising:
   obtaining a pattern of a design layout, using a computer, on the basis of a given design rule of the semiconductor integrated circuit;        predicting a pattern to be formed at a surface area of a wafer for forming the semiconductor integrated circuit, using a computer, on the basis of the obtained pattern;        obtaining an evaluated value, using a computer, by comparing the predicted pattern with the obtained pattern;        deciding whether the evaluated value satisfies a predetermined condition, using a computer;        modifying the given design rule, using a computer, when the evaluated value is decided as not satisfying the predetermined condition;        determining the given design rule as a fixed design rule for the semiconductor integrated circuit, using a computer, when the evaluated value is decided as satisfying the predetermined condition; and        designing a layout pattern for the semiconductor integrated circuit, using a computer, using the fixed design rule.     
     
     
       15. A method according to  claim 14 , wherein the pattern to be formed at a surface area of a wafer is predicted, using a computer, using data obtained by converting data of the obtained pattern to mask data for photolithography or data for electron beam lithography. 
     
     
       16. A method according to  claim 14 , wherein the pattern to be formed at a surface area of a wafer is predicted, using a computer, using at least one model selected from a first prediction model, a second prediction model and a third prediction model, the first prediction model being a model for calculating a light exposed state of a resist on the wafer when the obtained pattern is projected on the resist, the second prediction model being a model for calculating a resist pattern configuration after the resist has been developed, and the third prediction model being a model for calculating a wafer surface configuration after the wafer has been work- processed using the resist pattern configuration.   
     
     
       17. A method according to  claim 14 , wherein the layout pattern includes a standard cell pattern. 
     
     
       18. A method according to  claim 14 , wherein the layout pattern includes a pattern for placement and routing. 
     
     
       19. A method for manufacturing a semiconductor device, comprising projecting a pattern corresponding to the layout designed by the method according to  claim 14 , onto a photoresist on a semiconductor substrate. 
     
     
       20. A method according to  claim 1 , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit. 
     
     
       21. A system according to  claim 4 , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit. 
     
     
       22. The non- transitory computer readable storage medium according to    claim 7   , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit.   
     
     
       23. A method according to  claim 8 , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit. 
     
     
       24. A layout according to  claim 11 , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit. 
     
     
       25. A method according to  claim 14 , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit. 
     
     
       26. A method according to  claim 19 , wherein the given design rule defines a distance between patterns in different layers of the semiconductor integrated circuit. 
     
     
       27. A method for manufacturing a semiconductor device, comprising:
   forming a circuit pattern on a semiconductor wafer based on the layout designed by the method according to    claim 14   .     
     
     
       28. A computer program product configured to store program instructions for causing a computer to perform the method according to  claim 14 .

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