Method for applying a resist layer, uses of adhesive materials, and adhesive materials and resist layer

Abstract

A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

1. A method for the application of a resist layer, comprising:
 applying a resist layer to a base layer; 
 selectively irradiating the resist layer; and 
 developing the resist layer, 
 wherein the resist layer is applied to the base layer in the solid state; and 
 wherein a matching resist piece is cut out along an edge of a wafer after the application of the resist layer. 
 
     
     
       2. The method of  claim 1 , further comprising covering the resist layer with a protective material before the application of the resist layer to the base layer, the protective material preventing a curing of an adhesive associated with the resist layer, and being removed before the application. 
     
     
       3. The method of  claim 2 , where the protective material is arranged at the resist layer. 
     
     
       4. The method of  claim 2 , where the protective material is removed less than 10 minutes before the application to the base layer. 
     
     
       5. The method of  claim 2 , wherein the base layer comprises a semiconductor substrate. 
     
     
       6. The method of  claim 2 , comprising irradiating the resist layer with any one of electromagnetic radiation, ultraviolet radiation, X ray radiation, particle radiation, electron radiation, and ion radiation. 
     
     
       7. A method for patterning a resist layer, comprising:
 applying resist layer to a base layer; 
 selectively irradiating the resist layer; and 
 developing the resist layer; 
 wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation; and 
 providing an antireflection layer with the resist layer before the application of the resist layer to the base layer, said antireflection layer preventing a reflection of the radiation at the resist layer. 
 
     
     
       8. The method of  claim 7 , wherein the adhesive force decreases by more than 30% during irradiation. 
     
     
       9. The method of  claim 8 , wherein the adhesive force decreases by more than 90% during irradiation. 
     
     
       10. The method of  claim 7 , wherein the adhesive force increases by more than 50% during irradiation. 
     
     
       11. The method of  claim 10 , wherein the adhesive force increases by more than 100% during irradiation. 
     
     
       12. The method of  claim 7 , wherein remaining regions of the resist layer on the base layer after the development have a reduced adhesive force in comparison with the nonirradiated resist layer. 
     
     
       13. The method of  claim 7 , comprising stripping remaining regions of the resist layer on the base layer after the development with an adhesive area having an adhesive force at the remaining regions being greater than the adhesive force of the remaining regions with respect to the base layer. 
     
     
       14. The method of  claim 7 , comprising removing remaining regions of the resist layer on the base layer after the development with a solvent. 
     
     
       15. The method of  claim 7 , comprising using an organic solvent as a developer. 
     
     
       16. A method for patterning a resist layer, comprising:
 applying a resist layer to a base layer; 
 selectively irradiating the resist layer; and 
 developing the resist layer; 
 wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation comprising using an organic solvent as a developer; and 
 where the organic solvent comprises N methylpyrrolidone. 
 
     
     
       17. A method for patterning a resist later, comprising:
 applying a resist layer to a base layer; 
 selectively irradiating the resist layer; and 
 developing the resist layer; 
 wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation comprising using an organic solvent as a developer; and 
 where the organic solvent comprises dimethyl sulfoxide. 
 
     
     
       18. The method of  claim 7 , comprising applying the resist layer using an auxiliary area that adheres to the resist layer with a smaller adhesive force than the adhesive force of the nonirradiated resist layer at the base layer. 
     
     
       19. The method of  claim 18 , comprising applying the resist layer using an auxiliary tape. 
     
     
       20. The method of  claim 18 , comprising applying the resist layer using an auxiliary sheet. 
     
     
       21. A method for the application of a resist layer, comprising:
 applying a resist layer to a base layer; 
 selectively irradiating the resist layer; and 
 developing the resist layer., 
 wherein the resist layer is applied to the base layer in the solid state; and 
 wherein the resist layer is formed on a wafer and prestamped to a size which is at least 2 mm smaller than a diameter of the wafer. 
 
     
     
       22. A method for patterning a resist layer, comprising:
 applying a resist layer to a base layer; 
 selectively irradiating the resist layer; and 
 developing the resist layer; 
 wherein the resist layer is bonded to the base layer in the solid state and comprises an adhesive whose adhesive force changes with respect to the adhesive force at the base area during the irradiation; and 
 providing an antireflection layer with the resist layer before the application of the resist layer to the base layer, said antireflection layer reducing a reflection of the radiation at the resist layer. 
 
     
     
       23. The method of  claim 7 , comprising applying a resist layer with a thickness of greater than 30 μm in an application operation. 
     
     
       24. The method of  claim 23 , comprising applying a resist layer with a thickness of greater than 100 μm in an application operation. 
     
     
       25. The method of  claim 7 , comprising patterning the base layer in accordance with the regions of the resist layer that remain after the development. 
     
     
       26. The method of  claim 25 , comprising patterning the base layer in accordance with the regions of the resist layer that remain after the development in an etching method. 
     
     
       27. The method of  claim 7 , comprising applying material to uncovered regions of the base layer that are arranged between remaining regions of the resist layer after the development. 
     
     
       28. The method of  claim 27 , comprising applying material to uncovered regions of the base layer that are arranged between remaining regions of the resist layer after the development by means of any one of galvanic, chemical or chemical physical and physical application. 
     
     
       29. The method of  claim 7 , comprising doping the base layer selectively in accordance with the regions of the resist layer which remain after the development.