USRE43590EExpiredUtility

Aluminum alloy electrode for semiconductor devices

46
Assignee: YAMAMOTO SEIGOPriority: Jul 27, 1993Filed: May 9, 2006Granted: Aug 21, 2012
Est. expiryJul 27, 2013(expired)· nominal 20-yr term from priority
Inventors:Seigo YamamotoKatsutoshi TakagiEiji IwamuraKazuo YoshikawaTakashi Oonishi
H10W 20/4407H10P 14/44Y10T428/12736
46
PatentIndex Score
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Cited by
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References
31
Claims

Abstract

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150° to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements. REEXAMINATION RESULTS The questions raised in reexamination proceedings Nos. 90/007,822 and 90/007,883, filed Nov. 28, 2005 and Nov. 28, 2005 respectively, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, and/or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.

Claims

exact text as granted — not AI-modified
1. An electrode for semiconductor devices, which is made of an Al alloy consisting essentially of Al and at least one alloying elements selected from the group consisting of rare earth elements, Nd, in a total amount from 0.05 to 15 at %, and, optionally, one or more rare earth elements selected from the group consisting of Gd, Dy, and Y, which is formed of a thin film of said Al alloy deposited by sputtering, wherein a said thin film of said alloy has an electrical resistivity of lower than 20 μΩcm. 
     
     
       2. An electrode for semiconductor devices The electrode according to  claim 1 , wherein said Al alloy is deposited by sputtering contains intermetallic compounds formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       3. An electrode for semiconductor devices The electrode according to  claim 1 , wherein said electrode is used as an electrode for semiconductor devices in a liquid crystal display thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd, and if present said rare earth elements, dissolved in the Al matrix are precipitated as intermetallic compounds whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       4. An electrode for semiconductor devices The electrode according to any of  claim 1 , wherein the electrical resistivity of the Al alloy is adjusted to be lower than 20 μΩcm by precipitating part or all of the alloying elements dissolved in the Al as intermetallic compounds said thin film is deposited by sputtering using a target of an Al alloy containing Nd. 
     
     
       5. The electrode of  claim 1 , wherein the alloying element is at least Y. 
     
     
       6. The electrode of  claim 1 , wherein the alloying element is at least La. 
     
     
       7. The electrode of  claim 1 , wherein the alloying element is at least Nd. 
     
     
       8. The electrode of  claim 1 , wherein the alloying element is at least Tb. 
     
     
       9. The electrode of  claim 1 , wherein the alloying element is at least Gd. 
     
     
       10. The electrode of  claim 1 , wherein the alloying element is at least Dy. 
     
     
       11. The electrode of  claim 1 , wherein the alloying element is at least Pr. 
     
     
       12. The electrode according to claim 1, wherein said electrode is formed of a thin film of said Al alloy deposited by sputtering using a target of an Al alloy containing Nd. 
     
     
       13. The electrode according to claim 1, wherein said Al alloy consists of Al, Nd and one or more rare earth elements selected from the group consisting of Gd, Dy and Y. 
     
     
       14. The electrode according to claim 13, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd and said rare earth elements dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       15. The electrode according to claim 13, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd and said rare earth elements dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       16. The electrode according to claim 1, wherein said Al alloy consists of Al and Nd. 
     
     
       17. The electrode according to claim 16, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       18. The electrode according to claim 16, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       19. The electrode according to claim 1, wherein said electrode is an electrode in a liquid crystal display device. 
     
     
       20. An electrode for semiconductor devices, comprising:
 a glass substrate, and   a thin film deposited on said glass substrate by sputtering, and made of an Al alloy consisting of Al, Nd, in a total amount from 0.05 to 15 at %, and, optionally, one or more rare earth elements selected from the group consisting of Gd, Dy, and Y, wherein said thin film has an electrical resistivity of lower than 20 μΩcm.   
     
     
       21. The electrode according to claim 20, wherein said Al alloy contains intermetallic compounds formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       22. The electrode according to claim 20, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd, and if present said rare earth elements, dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       23. The electrode according to claim 20, wherein said thin film is deposited by sputtering using a target of an Al alloy containing Nd. 
     
     
       24. The electrode according to claim 20, wherein said Al alloy consists of Al, Nd, and one or more rare earth elements selected from the group consisting of Gd, Dy and Y. 
     
     
       25. The electrode according to claim 24, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd and said rare earth elements dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       26. The electrode according to claim 24, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd and said rare earth elements dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       27. The electrode according to claim 24, wherein said thin film is deposited by sputtering using a target of an Al alloy containing Nd and one or more rare earth elements selected from a group consisting of Gd, Dy and Y. 
     
     
       28. The electrode according to claim 20, wherein said Al alloy consists of Al and Nd. 
     
     
       29. The electrode according to claim 28, wherein said Al alloy contains intermetallic compounds as formed by precipitating part or all of Nd dissolved in the Al, whereby the electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       30. The electrode according to claim 28, wherein said thin film is annealed at a temperature range from 150 to 400° C. and part or all of Nd dissolved in the Al matrix are precipitated as intermetallic compounds, whereby an electrical resistivity of said thin film is adjusted to be lower than 20 μΩcm. 
     
     
       31. The electrode according to claim 20, wherein said electrode is an electrode in a liquid crystal display device.

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