Electrode and its fabrication method for semiconductor devices, and sputtering target for forming electrode film for semiconductor devices

Abstract

Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.

What is claimed is: 
     
       1. A sputtering target consisting of an alloy of Al and 0.05-15 at % Nd. 
     
     
       2. The sputtering target of  claim 1 , containing 0.05-9 at % Nd. 
     
     
       3. The sputtering target of  claim 1 , containing 0.05-6 at % Nd. 
     
     
       4. The sputtering target of  claim 1 , containing 0.05-4.28 at % Nd. 
     
     
       5. The sputtering target of  claim 1 , containing no scandium. 
     
     
       6. A sputtering target consisting of an alloy of Al and 0.05-15 at % Nd wherein said sputtering target is produced by a method comprising: melting Al and Nd under vacuum; and adjusting the content of Nd in an Al matrix to be in a range of 0.05 to 15 at %; and allowing the alloy of Al and Nd to solidify. 
     
     
       7. The sputtering target of claim 6, containing 0.05-9 at % Nd. 
     
     
       8. The sputtering target of claim 6, containing 0.05-6 at % Nd. 
     
     
       9. The sputtering target of claim 6, containing 0.05-4.28 at % Nd. 
     
     
       10. The sputtering target of claim 6, containing no scandium.