Semiconductor module with external power sensor

Abstract

A semiconductor module includes a semiconductor die, a mold compound encasing the semiconductor die, a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or an opening near the constricted region of the first terminal, and a coreless magnetic field sensor disposed in the recess or the opening of the mold compound and isolated from the first terminal by the mold compound. The coreless magnetic sensor is configured to generate a signal in response to a magnetic field produced by current flowing in the constricted region of the first terminal. The magnitude of the signal is proportional to the amount of current flowing in the constricted region of the first terminal. A method of manufacturing the module also is described.

What is claimed is: 
     
       1. A semiconductor module, comprising:
 a semiconductor die; 
 a mold compound encasing the semiconductor die; 
 a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or an opening near the constricted region of the first terminal; and 
 a coreless magnetic field sensor disposed in the recess or the opening of the mold compound and isolated from the first terminal by the mold compound, the coreless magnetic sensor configured to generate a signal in response to a magnetic field produced by current flowing in the constricted region of the first terminal, the magnitude of the signal being proportional to the amount of current flowing in the constricted region of the first terminal. 
 
     
     
       2. The semiconductor module of  claim 1 , wherein the coreless magnetic field sensor is a magnetoresistive sensor or a Hall sensor. 
     
     
       3. The semiconductor module of  claim 1 , wherein the constricted region of the first terminal comprises a tapered region over which the width of the first terminal narrows, wherein the recess of the mold compound is near the tapered region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the mold compound and comprises a single sensing element positioned adjacent one side of the tapered region, and wherein the single sensing element is isolated from the tapered region by the mold compound. 
     
     
       4. The semiconductor module of  claim 1 , wherein the constricted region of the first terminal comprises a tapered region over which the width of the first terminal narrows, wherein the recess of the mold compound is near the tapered region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the recess of the mold compound and comprises a first sensing element positioned adjacent a first side of the tapered region and a second sensing element positioned adjacent a second side of the tapered region opposite the first side, and wherein the first and second sensing elements are isolated from the tapered region by the mold compound. 
     
     
       5. The semiconductor module of  claim 1 , wherein the constricted region of the first terminal comprises a serpentine region, wherein the recess of the mold compound is near the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the mold compound and comprises a single sensing element positioned adjacent one side of the serpentine region, and wherein the single sensing element is isolated from the serpentine region by the mold compound. 
     
     
       6. The semiconductor module of  claim 1 , wherein the constricted region of the first terminal comprises a serpentine region, wherein the recess of the mold compound is near the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the recess of the mold compound and comprises a first sensing element positioned adjacent a first side of the serpentine region and a second sensing element positioned adjacent a second side of the serpentine region opposite the first side, and wherein the first and second sensing elements are isolated from the serpentine region by the mold compound. 
     
     
       7. The semiconductor module of  claim 1 , wherein the constricted region of the first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the opening of the mold compound and comprises a single sensing element positioned above or below the opening in the first terminal, and wherein the single sensing element is isolated from a sidewall of the opening in the first terminal by the mold compound. 
     
     
       8. The semiconductor module of  claim 1 , wherein the constricted region of the first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the opening of the mold compound and comprises a first sensing element positioned above the opening in the first terminal and a second sensing element positioned below the opening in the first terminal, and wherein the first and second sensing elements are isolated from a sidewall of the opening in the first terminal by the mold compound. 
     
     
       9. The semiconductor module of  claim 1 , wherein the mold compound has a protrusion which covers more of the first terminal than other ones of the terminals protruding from a same side of the mold compound as the first terminal, and wherein the recess or the opening of the mold compound is formed in the protrusion. 
     
     
       10. The semiconductor module of  claim 1 , wherein the semiconductor die is a power semiconductor die, wherein the semiconductor module has double-sided cooling, and wherein the first terminal is an AC output terminal of the power semiconductor die. 
     
     
       11. A cooling system, comprising:
 a plurality of individual semiconductor modules each comprising: a semiconductor die; a mold compound encasing the semiconductor die; a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or an opening near the constricted region of the first terminal; and a coreless magnetic field sensor disposed in the recess or the opening of the mold compound and isolated from the first terminal by the mold compound, the coreless magnetic sensor configured to generate a signal in response to a magnetic field produced by current flowing in the constricted region of the first terminal, the magnitude of the signal being proportional to the amount of current flowing in the constricted region of the first terminal; and 
 a first lid joined to a second lid to form a sealed housing which includes the plurality of individual semiconductor modules and a cavity between the lids and the individual semiconductor modules for fluid flow via a plurality of ports formed in the first and/or second lid. 
 
     
     
       12. The cooling system of  claim 11 , wherein each coreless magnetic field sensor is a magnetoresistive sensor or a Hall sensor. 
     
     
       13. The cooling system of  claim 11 , wherein the constricted region of each first terminal comprises a tapered region over which the width of the first terminal narrows, wherein the recess of the mold compound is near the tapered region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the mold compound and comprises a single sensing element positioned adjacent one side of the tapered region, and wherein the single sensing element is isolated from the tapered region by the mold compound. 
     
     
       14. The cooling system of  claim 11 , wherein the constricted region of each first terminal comprises a tapered region over which the width of the first terminal narrows, wherein the recess of the mold compound is near the tapered region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the recess of the mold compound and comprises a first sensing element positioned adjacent a first side of the tapered region and a second sensing element positioned adjacent a second side of the tapered region opposite the first side, and wherein the first and second sensing elements are isolated from the tapered region by the mold compound. 
     
     
       15. The cooling system of  claim 11 , wherein the constricted region of each first terminal comprises a serpentine region, wherein the recess of the mold compound is near the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the mold compound and comprises a single sensing element positioned adjacent one side of the serpentine region, and wherein the single sensing element is isolated from the serpentine region by the mold compound. 
     
     
       16. The cooling system of  claim 11 , wherein the constricted region of each first terminal comprises a serpentine region, wherein the recess of the mold compound is near the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the recess of the mold compound and comprises a first sensing element positioned adjacent a first side of the serpentine region and a second sensing element positioned adjacent a second side of the serpentine region opposite the first side, and wherein the first and second sensing elements are isolated from the serpentine region by the mold compound. 
     
     
       17. The cooling system of  claim 11 , wherein the constricted region of each first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the opening of the mold compound and comprises a single sensing element positioned above or below the opening in the first terminal, and wherein the single sensing element is isolated from a sidewall of the opening in the first terminal by the mold compound. 
     
     
       18. The cooling system of  claim 11 , wherein the constricted region of each first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the opening of the mold compound and comprises a first sensing element positioned above the opening in the first terminal and a second sensing element positioned below the opening in the first terminal, and wherein the first and second sensing elements are isolated from a sidewall of the opening in the first terminal by the mold compound. 
     
     
       19. The cooling system of  claim 11 , wherein the mold compound of each individual semiconductor module has a protrusion which covers more of the first terminal than other ones of the terminals protruding from a same side of the mold compound as the first terminal, and wherein the recess or the opening of the mold compound is formed in the protrusion. 
     
     
       20. The cooling system of  claim 11 , wherein each semiconductor die is a power semiconductor die, wherein each individual semiconductor module has double-sided cooling, and wherein each first terminal is an AC output terminal of the power semiconductor die. 
     
     
       21. A method of manufacturing a semiconductor module, the method comprising:
 electrically connecting a plurality of terminals to a semiconductor die; 
 molding the plurality of terminals and the semiconductor die so that the semiconductor die is encased in a mold compound and the plurality of terminals protrude out of the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or an opening near the constricted region of the first terminal; and 
 placing a coreless magnetic field sensor in the recess or the opening of the mold compound, the coreless magnetic field sensor being isolated from the first terminal by the mold compound and configured to generate a signal in response to a magnetic field produced by current flowing in the constricted region of the first terminal, the magnitude of the signal being proportional to the amount of current flowing in the constricted region of the first terminal. 
 
     
     
       22. A semiconductor module, comprising:
 a semiconductor die;   a mold compound encasing the semiconductor die;   a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, a first one of the terminals haVing a constricted region covered by the mold compound; and   a recess formed in an exterior surface of the mold compound,   wherein the recess is aligned with the constricted region of the first terminal,   wherein the recess is shaped to receive a coreless magnetic field sensor,   wherein the mold compound isolates the constricted region of the first terminal from the recess.    
     
     
       23. The semiconductor module of  claim 22 , wherein the constricted region of the first terminal comprises a tapered region over which the width of the first terminal narrows, wherein the recess is aligned with the tapered region of the first terminal, and wherein the tapered region of the first terminal is covered by the mold compound.  
     
     
       24. The semiconductor module of  claim 22 , wherein the constricted region of the first terminal comprises a serpentine region, wherein the recess is aligned with the serpentine region of the first terminal, and wherein the serpentine region of the first terminal is covered by the mold compound.  
     
     
       25. The semiconductor module of  claim 22 , wherein the mold compound has a protrusion which covers more of the first terminal than other ones of the terminals protruding from a same side of the mold compound as the first terminal, and wherein the recess is formed in the protrusion.  
     
     
       26. The semiconductor module of  claim 22 , wherein the semiconductor die is a power semiconductor die, and wherein the first terminal is an AC output terminal of the power semiconductor die.  
     
     
       27. The semiconductor module of  claim 22 , further comprising metallized surfaces at opposite sides of the semiconductor module, and wherein each one of the metallized surfaces is exposed from the mold compound to provide double-sided cooling for the semiconductor module.  
     
     
       28. A semiconductor module, comprising:
 a semiconductor die;   a mold compound encasing the semiconductor die;   a plurality of terminals electrically connected to the semiconductor die and protruding out of the mold compound, a first one of the terminals haVing a constricted region covered by the mold compound; and   an opening formed in the mold compound,   wherein the opening is aligned with the constricted region of the first terminal,   wherein the opening is shaped to receive a coreless magnetic field sensor,   wherein the mold compound isolates the constricted region of the first terminal from the opening.    
     
     
       29. The semiconductor module of  claim 28 , wherein the constricted region of the first terminal comprises a region of the first terminal haVing an opening, wherein the opening formed in the mold compound is aligned with the opening in the first terminal, and wherein a sidewall of the opening in the first terminal is covered by the mold compound.  
     
     
       30. The semiconductor module of  claim 28 , wherein the mold compound has a protrusion which covers more of the first terminal than other ones of the terminals protruding from a same side of the mold compound as the first terminal, and wherein the opening is formed in the protrusion.  
     
     
       31. The semiconductor module of  claim 28 , wherein the semiconductor die is a power semiconductor die, and wherein the first terminal is an AC output terminal of the power semiconductor die.  
     
     
       32. The semiconductor module of  claim 28 , further comprising metallized surfaces at opposite sides of the semiconductor module, and wherein each one of the metallized surfaces is exposed from the mold compound to provide double-sided cooling for the semiconductor module.