Integrated circuit device including vertical memory device and method of manufacturing the same

Abstract

In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first direction less than a previous one of the conductive layers to define a landing portion of the previous one of the conductive layers. An insulating plug is in one of the conductive layers under one of the landing portions, and a contact plug extends from an upper surface of the one of the landing portions.

What is claimed is: 
     
       1. A method of manufacturing a semiconductor device, comprising:
 preparing a substrate comprising a cell array region and a word line contact region;   forming a stack of alternating first and second layers on the substrate, each of the second layers extending in a first direction less than a previous one of the second layers to define a landing portion of the previous one of the second layers in the word line contact region;   forming a first hole through at least one of a plurality of the first layers and at least one of a plurality of the second layers in the stack such that the first hole penetrates one of the landing portions;   etching the plurality of the first layers to widen portions of the first hole at least under the plurality of the second layers;   forming a support insulating layer within the first hole including the widened portions;   exposing part of the landing portions; and   forming contact plugs such that each of the contact plugs in contact with a respective one of the landing portions.   
     
     
       2. The method of  claim 1 , further comprising:
 removing the second layers to form second layer removal space; and   filling the second layer removal space with a conducting material to form conductive layers alternately stacked with the first layers.   
     
     
       3. The method of  claim 2 , wherein the first layers are interlayer insulating layers. 
     
     
       4. The method of  claim 3 , wherein the second layers are formed of a different insulating material than the first layers. 
     
     
       5. The method of  claim 1 , wherein the forming a first hole forms the first hole through an entirety of the stack. 
     
     
       6. The method of  claim 1 , wherein the forming a first hole forms the first hole through less than an entirety of the stack. 
     
     
       7. The method of  claim 1 , wherein the etching is a wet etching selective to the first layers. 
     
     
       8. The method of  claim 1 , wherein the forming contact plugs forms one of the contact plugs on the landing portion including the first hole such that the one of the contact plugs covers the first hole. 
     
     
       9. The method of  claim 8 , wherein the one of the contact plugs fills at least a portion of the first hole. 
     
     
       10. The method of  claim 1 , wherein the first layers are interlayer insulating layers. 
     
     
       11. The method of  claim 10 , wherein the second layers are formed of a different insulating material than the first layers. 
     
     
       12. A method of manufacturing a semiconductor device, comprising:
 preparing a substrate comprising a cell array region and a word line contact region;   forming a stack of alternating interlayer insulating layers and sacrificial layers on the substrate, each of the sacrificial layers extending in a first direction less than a previous one of the sacrificial layers to define a first landing portion of the previous one of the sacrificial layers in the word line contact region;   removing (i) a portion of the first landing portion of each of the sacrificial layers and (ii) portions of the interlayer insulating layers at least above and below remaining portions of each of the landing portions of the sacrificial layers to define a plurality of recesses;   forming a support insulating layer within the plurality of recesses;   removing the sacrificial layers to form sacrificial layer removal space;   filling the sacrificial layer removal space with a conducting material to form gate electrode layers alternately stacked with the interlayer insulating layers;   exposing part of the landing portions; and   forming contact plugs such that each of the contact plugs is in contact with a respective one of the landing portions.   
     
     
       13. A device comprising:
 a substrate including a cell array region and a contact region;   a lower dielectric layer on the substrate;   an alternating stack of insulating layers and conductive layers on the lower dielectric layer, the alternating stack including stepped surfaces on the contact region of the substrate;   a first insulating portion on the stepped surfaces of the alternating stack; and   a first vertical structure vertically extending through the alternating stack and the first insulating portion, and including a vertical channel pattern that extends through at least one of the conductive layers and a dielectric layer pattern that laterally surrounds the vertical channel pattern,   wherein one of the conductive layers laterally surrounds a portion of the dielectric layer pattern, and   the lower dielectric layer extends through at least a portion of a bottom surface of a bottommost one of the conductive layers.   
     
     
       14. The device of  claim 13 , further comprising:
 a second vertical structure vertically extending through the alternating stack and the first insulating portion, and including a vertical conductive pattern that overlies and contacts one of the conductive layers.   
     
     
       15. The device of  claim 14 , wherein the second vertical structure includes an upper insulating pattern that laterally surrounds the vertical conductive pattern and a lower insulating pattern that contacts the lower dielectric layer. 
     
     
       16. The device of  claim 15 , wherein at least one of the conductive layers laterally surrounds a portion of the lower insulating pattern. 
     
     
       17. The device of  claim 15 , wherein the lower insulating pattern of the second vertical structure includes a first lower insulating pattern that overlies a top surface of one of the conductive layers. 
     
     
       18. The device of  claim 15 , wherein the lower insulating pattern includes a same material composition as the upper insulating pattern. 
     
     
       19. The device of  claim 15 , wherein the vertical conductive pattern of the second vertical structure includes metal, conductive metal nitride or transition metal. 
     
     
       20. The device of  claim 14 , wherein
 a width of a first portion of the second vertical structure is different from a width of a second portion of the second vertical structure, and   the first portion of the second vertical structure is on the second portion of the second vertical structure.   
     
     
       21. A device comprising:
 a substrate including a cell array region and a contact region;   a lower dielectric layer on the substrate;   an alternating stack of insulating layers and conductive layers on the lower dielectric layer, the alternating stack including stepped surfaces on the contact region of the substrate;   a first insulating portion on the stepped surfaces of the alternating stack; and   a first vertical structure vertically extending through the alternating stack and the first insulating portion, and including a vertical conductive pattern that overlies and contacts one of the conductive layers,   wherein the first vertical structure includes an upper insulating pattern that laterally surrounds the vertical conductive pattern and a lower insulating pattern that contacts the lower dielectric layer,   at least one of the conductive layers laterally surrounds a portion of the lower insulating pattern, and   the lower dielectric layer extends through at least a portion of a bottom surface of a bottommost one of the conductive layers.   
     
     
       22. The device of  claim 21 , wherein the lower insulating pattern of the first vertical structure includes a first lower insulating pattern that overlies a top surface of one of the conductive layers. 
     
     
       23. The device of  claim 21 , wherein the lower insulating pattern includes a same material composition as the upper insulating pattern. 
     
     
       24. The device of  claim 21 , further comprising:
 a second vertical structure vertically extending through the alternating stack and the first insulating portion, and including a vertical channel pattern that extends through at least one of the conductive layers and a dielectric layer pattern that laterally surrounds the vertical channel pattern.   
     
     
       25. The device of  claim 24 , wherein one of the conductive layers laterally surrounds a portion of the dielectric layer pattern. 
     
     
       26. The device of  claim 21 , wherein the vertical conductive pattern of the first vertical structure includes metal, conductive metal nitride or transition metal. 
     
     
       27. The device of  claim 21 , wherein
 a width of a first portion of the first vertical structure is different from a width of a second portion of the first vertical structure, and   the first portion of the first vertical structure is on the second portion of first vertical structure.   
     
     
       28. A device comprising:
 a substrate including a cell array region and a contact region;   a lower dielectric layer on the substrate;   an alternating stack of insulating layers and conductive layers on the lower dielectric layer, the alternating stack including stepped surfaces on the contact region of the substrate;   a first insulating portion on the stepped surfaces of the alternating stack;   a first vertical structure vertically extending through the alternating stack and the first insulating portion, and including a vertical channel pattern that extends through at least one of the conductive layers and a dielectric layer pattern that laterally surrounds the vertical channel pattern; and   a second vertical structure vertically extending through the alternating stack and the first insulating portion, and including a vertical conductive pattern that overlies and contacts one of the conductive layers,   wherein one of the conductive layers laterally surrounds a portion of the dielectric layer pattern.   the second vertical structure includes an upper insulating pattern that laterally surrounds the vertical conductive pattern and a lower insulating pattern that contacts the lower dielectric layer,   at least one of the conductive layers laterally surrounds a portion of the lower insulating pattern, and   the lower dielectric layer extends through at least a portion of a bottom surface of a bottommost one of the conductive layers.   
     
     
       29. The device of  claim 28 , wherein the lower insulating pattern of the second vertical structure includes a first lower insulating pattern that overlies a top surface of one of the conductive layers. 
     
     
       30. The device of  claim 28 , wherein the lower insulating pattern includes a same material composition as the upper insulating pattern. 
     
     
       31. The device of  claim 28 , wherein the vertical conductive pattern of the second vertical structure includes metal, conductive metal nitride or transition metal. 
     
     
       32. The device of  claim 28 , wherein
 a width of a first portion of the second vertical structure is different from a width of a second portion of hte second vertical structure, and   the first portion of the second vertical structure is on the second portion of the second vertical structure.