Assignee
AVOGY INC
US·43 granted patents·26 pending applications·77 citations·filing 2012–2016
Top patents by PatentIndex Score
69 records- 0196US9368582B2High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2013·Granted Jun 14, 2016·22 cites·10 claims
- 0287US8823140B2GaN vertical bipolar transistorAVOGY INC·Filed 2012·Granted Sep 2, 2014·8 cites·21 claims
- 0386US8947154B1Method and system for operating gallium nitride electronicsAVOGY INC·Filed 2013·Granted Feb 3, 2015·12 cites·19 claims
- 0479US8969180B2Method and system for junction termination in GaN materials using conductivity modulationAVOGY INC·Filed 2014·Granted Mar 3, 2015·3 cites·15 claims
- 0579US8866148B2Vertical GaN power device with breakdown voltage controlAVOGY INC·Filed 2012·Granted Oct 21, 2014·3 cites·11 claims
- 0678US9059199B2Method and system for a gallium nitride vertical transistorAVOGY INC·Filed 2013·Granted Jun 16, 2015·3 cites·7 claims
- 0777US8941117B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2013·Granted Jan 27, 2015·3 cites·6 claims
- 0873US9369059B2AC-DC converter for wide range output voltage and high switching frequencyAVOGY INC·Filed 2015·Granted Jun 14, 2016·2 cites·18 claims
- 0971US9196679B2Schottky diode with buried layer in GaN materialsAVOGY INC·Filed 2015·Granted Nov 24, 2015·1 cites·22 claims
- 1068US9391179B2Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitanceAVOGY INC·Filed 2015·Granted Jul 12, 2016·1 cites·18 claims
- 1168US8937317B2Method and system for co-packaging gallium nitride electronicsAVOGY INC·Filed 2012·Granted Jan 20, 2015·2 cites·11 claims
- 1267US9318331B2Method and system for diffusion and implantation in gallium nitride based devicesAVOGY INC·Filed 2014·Granted Apr 19, 2016·1 cites·20 claims
- 1367US9171751B2Method and system for fabricating floating guard rings in GaN materialsAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·17 claims
- 1467US8969926B2Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitanceAVOGY INC·Filed 2012·Granted Mar 3, 2015·1 cites·8 claims
- 1567US8853063B2Method and system for carbon doping control in gallium nitride based devicesAVOGY INC·Filed 2013·Granted Oct 7, 2014·1 cites·15 claims
- 1665US9171900B2Method of fabricating a gallium nitride P-i-N diode using implantationAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·20 claims
- 1765US9171937B2Monolithically integrated vertical JFET and Schottky diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·1 cites·14 claims
- 1862US9159799B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2013·Granted Oct 13, 2015·1 cites·12 claims
- 1962US9123799B2Gallium nitride field effect transistor with buried field plate protected lateral channelAVOGY INC·Filed 2013·Granted Sep 1, 2015·1 cites·13 claims
- 2059US9330918B2Edge termination by ion implantation in gallium nitrideAVOGY INC·Filed 2014·Granted May 3, 2016·0 cites·12 claims
- 2158US9257500B2Vertical gallium nitride power device with breakdown voltage controlAVOGY INC·Filed 2014·Granted Feb 9, 2016·0 cites·14 claims
- 2257US9450112B2GaN-based Schottky barrier diode with algan surface layerAVOGY INC·Filed 2014·Granted Sep 20, 2016·0 cites·12 claims
- 2357US9269793B2Method and system for a gallium nitride self-aligned vertical MESFETAVOGY INC·Filed 2014·Granted Feb 23, 2016·0 cites·21 claims
- 2456US9171923B2Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diodeAVOGY INC·Filed 2014·Granted Oct 27, 2015·0 cites·18 claims
- 2556US9117850B2Method and system for a gallium nitride vertical JFET with self-aligned source and gateAVOGY INC·Filed 2014·Granted Aug 25, 2015·0 cites·15 claims
- 2656US9089083B2AC-DC converter for wide range output voltage and high switching frequencyAVOGY INC·Filed 2012·Granted Jul 21, 2015·1 cites·16 claims
- 2756US8946725B2Vertical gallium nitride JFET with gate and source electrodes on regrown gateAVOGY INC·Filed 2014·Granted Feb 3, 2015·0 cites·20 claims
- 2856US2017133481A1High power gallium nitride electronics using miscut substratesAVOGY INC·Filed 2016·Application pending·0 cites
- 2955US9484470B2Method of fabricating a GaN P-i-N diode using implantationAVOGY INC·Filed 2015·Granted Nov 1, 2016·0 cites·20 claims
- 3055US9029210B2GaN vertical superjunction device structures and fabrication methodsAVOGY INC·Filed 2014·Granted May 12, 2015·0 cites·9 claims
- 3154US9318619B2Vertical gallium nitride JFET with gate and source electrodes on regrown gateAVOGY INC·Filed 2015·Granted Apr 19, 2016·0 cites·20 claims
- 3254US2016043198A1Schottky diode with buried layer in gan materialsAVOGY INC·Filed 2015·Application pending·0 cites
- 3353US9502544B2Method and system for planar regrowth in GaN electronic devicesAVOGY INC·Filed 2015·Granted Nov 22, 2016·0 cites·22 claims
- 3452US9525039B2Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerAVOGY INC·Filed 2015·Granted Dec 20, 2016·0 cites·7 claims
- 3552US2015206768A1Method and system for co-packaging gallium nitride electronicsAVOGY INC·Filed 2014·Application pending·0 cites
- 3651USD762573SPower supplyAVOGY INC·Filed 2015·Granted Aug 2, 2016·5 cites·1 claims
- 3751US2015263640A1Adaptive synchronous switching in a resonant converterAVOGY INC·Filed 2014·Application pending·0 cites
- 3851US2015102360A1Bondable top metal contacts for gallium nitride power devicesAVOGY INC·Filed 2014·Application pending·0 cites
- 3950US9324844B2Method and system for a GaN vertical JFET utilizing a regrown channelAVOGY INC·Filed 2015·Granted Apr 26, 2016·0 cites·13 claims
- 4050US9287389B2Method and system for doping control in gallium nitride based devicesAVOGY INC·Filed 2015·Granted Mar 15, 2016·0 cites·20 claims
- 4150US2016190296A1Gallium nitride based high electron mobility transistor including an aluminum gallium nitride barrier layerAVOGY INC·Filed 2015·Application pending·0 cites
- 4250US2016190276A1Method and system for in-situ etch and regrowth in gallium nitride based devicesAVOGY INC·Filed 2015·Application pending·0 cites
- 4350US2014203328A1Method and system for a gallium nitride vertical jfet with self-aligned gate metallizationAVOGY INC·Filed 2014·Application pending·0 cites
- 4449US2015263639A1Adaptive synchronous switching in a resonant converterAVOGY INC·Filed 2014·Application pending·0 cites
- 4549US2014051236A1Gan-based schottky barrier diode with field plateAVOGY INC·Filed 2013·Application pending·0 cites
- 4648US9531256B2AC-DC converter with adjustable outputAVOGY INC·Filed 2013·Granted Dec 27, 2016·0 cites·17 claims
- 4748US2016190351A1Method and system for gan vertical jfet utilizing a regrown gateAVOGY INC·Filed 2015·Application pending·0 cites
- 4847US9508838B2InGaN ohmic source contacts for vertical power devicesAVOGY INC·Filed 2015·Granted Nov 29, 2016·0 cites·9 claims
- 4947US2015340449A1Gallium nitride field effect transistor with buried field plate protected lateral channelAVOGY INC·Filed 2015·Application pending·0 cites
- 5047US2015340514A1Method and system for a gallium nitride vertical jfet with self-aligned source and gateAVOGY INC·Filed 2015·Application pending·0 cites
Showing the top 50 of 69 patent records by PatentIndex Score.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →