Assignee
BREITWISCH MATTHEW J
US·29 granted patents·2 pending applications·503 citations·filing 2007–2012
Top patents by PatentIndex Score
31 records- 0199US8107276B2Resistive memory devices having a not-and (NAND) structureBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·246 cites·16 claims
- 0298US8589320B2Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocksBREITWISCH MATTHEW J·Filed 2012·Granted Nov 19, 2013·46 cites·13 claims
- 0397US8338225B2Method to reduce a via area in a phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Dec 25, 2012·30 cites·14 claims
- 0495US8311965B2Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance materialBREITWISCH MATTHEW J·Filed 2009·Granted Nov 13, 2012·71 cites·12 claims
- 0594US8728859B2Small footprint phase change memory cellBREITWISCH MATTHEW J·Filed 2010·Granted May 20, 2014·14 cites·16 claims
- 0693US8471236B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Jun 25, 2013·12 cites·9 claims
- 0790US8648326B2Phase change memory electrode with sheath for reduced programming currentBREITWISCH MATTHEW J·Filed 2011·Granted Feb 11, 2014·10 cites·14 claims
- 0889US8105859B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·16 cites·8 claims
- 0988US8633464B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2012·Granted Jan 21, 2014·7 cites·8 claims
- 1087US8283650B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2009·Granted Oct 9, 2012·12 cites·5 claims
- 1186US8110901B2Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillarsBREITWISCH MATTHEW J·Filed 2010·Granted Feb 7, 2012·6 cites·8 claims
- 1284US8129268B2Self-aligned lower bottom electrodeBREITWISCH MATTHEW J·Filed 2009·Granted Mar 6, 2012·10 cites·17 claims
- 1376US8536675B2Thermally insulated phase change material memory cellsBREITWISCH MATTHEW J·Filed 2012·Granted Sep 17, 2013·2 cites·2 claims
- 1472US8445313B2Method for forming a self-aligned bit line for PCRAM and self-aligned etch back processBREITWISCH MATTHEW J·Filed 2012·Granted May 21, 2013·2 cites·17 claims
- 1572US8395192B2Single mask adder phase change memory elementBREITWISCH MATTHEW J·Filed 2011·Granted Mar 12, 2013·2 cites·10 claims
- 1671US8233317B2Phase change memory device suitable for high temperature operationBREITWISCH MATTHEW J·Filed 2009·Granted Jul 31, 2012·7 cites·19 claims
- 1769US8101456B2Method to reduce a via area in a phase change memory cellBREITWISCH MATTHEW J·Filed 2008·Granted Jan 24, 2012·3 cites·9 claims
- 1868US8415653B2Single mask adder phase change memory elementBREITWISCH MATTHEW J·Filed 2012·Granted Apr 9, 2013·1 cites·12 claims
- 1967US8492194B2Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cellBREITWISCH MATTHEW J·Filed 2011·Granted Jul 23, 2013·1 cites·16 claims
- 2066US9059394B2Self-aligned lower bottom electrodeBREITWISCH MATTHEW J·Filed 2012·Granted Jun 16, 2015·1 cites·5 claims
- 2166US8273598B2Method for forming a self-aligned bit line for PCRAM and self-aligned etch back processBREITWISCH MATTHEW J·Filed 2011·Granted Sep 25, 2012·1 cites·20 claims
- 2258US8466006B2Thermally insulated phase material cellsBREITWISCH MATTHEW J·Filed 2012·Granted Jun 18, 2013·0 cites·6 claims
- 2357US8283202B2Single mask adder phase change memory elementBREITWISCH MATTHEW J·Filed 2009·Granted Oct 9, 2012·0 cites·15 claims
- 2457US8278197B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2008·Granted Oct 2, 2012·0 cites·14 claims
- 2557US8138056B2Thermally insulated phase change material memory cells with pillar structureBREITWISCH MATTHEW J·Filed 2009·Granted Mar 20, 2012·0 cites·4 claims
- 2655US8897062B2Memory programming for a phase change memory cellBREITWISCH MATTHEW J·Filed 2011·Granted Nov 25, 2014·1 cites·12 claims
- 2755US8115186B2Phase change memory cell with reduced switchable volumeBREITWISCH MATTHEW J·Filed 2009·Granted Feb 14, 2012·0 cites·16 claims
- 2854US8716759B2Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift deviceBREITWISCH MATTHEW J·Filed 2012·Granted May 6, 2014·0 cites·11 claims
- 2952US8116126B2Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionBREITWISCH MATTHEW J·Filed 2009·Granted Feb 14, 2012·2 cites·20 claims
- 3051US2008265234A1Method of Forming Phase Change Memory Cell With Reduced Switchable VolumeBREITWISCH MATTHEW J·Filed 2007·Application pending·0 cites
- 3150US2008164453A1Uniform critical dimension size pore for pcram applicationBREITWISCH MATTHEW J·Filed 2007·Application pending·0 cites
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