Assignee
CHANG HEON YONG
KR·13 granted patents·11 pending applications·36 citations·filing 2006–2011
Top patents by PatentIndex Score
24 records- 0187US8486752B2Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devicesCHANG HEON YONG·Filed 2010·Granted Jul 16, 2013·7 cites·10 claims
- 0285US8399285B2Phase change memory device having a bent heater and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Mar 19, 2013·8 cites·23 claims
- 0379US8416616B2Phase change memory device and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Apr 9, 2013·4 cites·19 claims
- 0478US8236602B2Phase change memory device resistant to stack pattern collapse and a method for manufacturing the sameCHANG HEON YONG·Filed 2010·Granted Aug 7, 2012·3 cites·22 claims
- 0576US8422283B2Phase change memory device to prevent thermal cross-talk and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Apr 16, 2013·3 cites·8 claims
- 0676US8293650B2Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Oct 23, 2012·3 cites·15 claims
- 0766US8216941B2Method for manufacturing phase change memory deviceCHANG HEON YONG·Filed 2008·Granted Jul 10, 2012·2 cites·14 claims
- 0864US8258002B2Phase change memory device resistant to stack pattern collapse and a method for manufacturing the sameCHANG HEON YONG·Filed 2010·Granted Sep 4, 2012·2 cites·17 claims
- 0963US8071968B2Phase change memory device and method for manufacturing the sameCHANG HEON YONG·Filed 2009·Granted Dec 6, 2011·2 cites·20 claims
- 1054US8093632B2Phase change memory device accounting for volume change of phase change material and method for manufacturing the sameCHANG HEON YONG·Filed 2008·Granted Jan 10, 2012·2 cites·5 claims
- 1153US8455329B2Phase change memory device capable of increasing sensing margin and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Jun 4, 2013·0 cites·12 claims
- 1253US8450772B2Phase change RAM device and method for manufacturing the sameCHANG HEON YONG·Filed 2009·Granted May 28, 2013·0 cites·5 claims
- 1351US2009039333A1Phase change memory device and method for manufacturing the sameCHANG HEON YONG·Filed 2008·Application pending·0 cites
- 1450US2010163834A1Contact structure, method of manufacturing the same, phase changeable memory device having the same, and method of manufacturing phase changeable memory deviceCHANG HEON YONG·Filed 2009·Application pending·0 cites
- 1548US2009267045A1Phase change memory device having heaters and method for manufacturing the sameCHANG HEON YONG·Filed 2008·Application pending·0 cites
- 1648US2010163830A1Phase-change random access memory capable of reducing thermal budget and method of manufacturing the sameCHANG HEON YONG·Filed 2009·Application pending·0 cites
- 1747US2009184304A1Phase change memory device having plug-shaped phase change layers and method for manufacturing the sameCHANG HEON YONG·Filed 2008·Application pending·0 cites
- 1846US2008128673A1Transistor of phase change memory device and method for manufacturing the sameCHANG HEON YONG·Filed 2007·Application pending·0 cites
- 1945US2009101981A1One-transistor type dramCHANG HEON YONG·Filed 2008·Application pending·0 cites
- 2045US2007241385A1Phase change memory device for optimized current consumption efficiency and operation speed and method of manufacturing the sameCHANG HEON YONG·Filed 2006·Application pending·0 cites
- 2142US8236664B2Phase change memory device accounting for volume change of phase change material and method for manufacturing the sameCHANG HEON YONG·Filed 2011·Granted Aug 7, 2012·0 cites·9 claims
- 2242US2008280440A1Method for forming a pn diode and method of manufacturing phase change memory device using the sameCHANG HEON YONG·Filed 2007·Application pending·0 cites
- 2337US2010117046A1Phase change memory device having reduced programming current and method for manufacturing the sameCHANG HEON YONG·Filed 2008·Application pending·0 cites
- 2436US2008116443A1Phase change memory device with hole for a lower electrode defined in a stable manner and method for manufacturing the sameCHANG HEON YONG·Filed 2007·Application pending·0 cites
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