Assignee
JAGANNATHAN HEMANTH
US·11 granted patents·10 pending applications·54 citations·filing 2009–2012
Top patents by PatentIndex Score
21 records- 0192US9006094B2Stratified gate dielectric stack for gate dielectric leakage reductionJAGANNATHAN HEMANTH·Filed 2012·Granted Apr 14, 2015·10 cites·15 claims
- 0291US8304836B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2009·Granted Nov 6, 2012·10 cites·18 claims
- 0389US8741757B2Replacement gate electrode with multi-thickness conductive metallic nitride layersJAGANNATHAN HEMANTH·Filed 2012·Granted Jun 3, 2014·8 cites·19 claims
- 0487US9202698B2Replacement gate electrode with multi-thickness conductive metallic nitride layersJAGANNATHAN HEMANTH·Filed 2012·Granted Dec 1, 2015·7 cites·24 claims
- 0584US8835232B2Low external resistance ETSOI transistorsJAGANNATHAN HEMANTH·Filed 2012·Granted Sep 16, 2014·6 cites·17 claims
- 0683US8653610B2High performance non-planar semiconductor devices with metal filled inter-fin gapsJAGANNATHAN HEMANTH·Filed 2010·Granted Feb 18, 2014·6 cites·23 claims
- 0778US9059314B2Structure and method to obtain EOT scaled dielectric stacksJAGANNATHAN HEMANTH·Filed 2012·Granted Jun 16, 2015·2 cites·13 claims
- 0869US8680629B2Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devicesJAGANNATHAN HEMANTH·Filed 2009·Granted Mar 25, 2014·3 cites·9 claims
- 0968US8748991B2Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devicesJAGANNATHAN HEMANTH·Filed 2012·Granted Jun 10, 2014·2 cites·2 claims
- 1057US2013292746A1Divot-free planarization dielectric layer for replacement gateJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1154US8274116B2Control of threshold voltages in high-k metal gate stack and structures for CMOS devicesJAGANNATHAN HEMANTH·Filed 2009·Granted Sep 25, 2012·0 cites·3 claims
- 1253US2013277743A1Stratified gate dielectric stack for gate dielectric leakage reductionJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1351US8835260B2Control of threshold voltages in high-k metal gate stack and structures for CMOS devicesJAGANNATHAN HEMANTH·Filed 2012·Granted Sep 16, 2014·0 cites·5 claims
- 1451US2013221413A1Divot-free planarization dielectric layer for replacement gateJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1549US2013256802A1Replacement Gate With Reduced Gate Leakage CurrentJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1647US2013217220A1Replacement gate electrode with a tantalum alloy metal layerJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1747US2013307079A1Etch resistant barrier for replacement gate integrationJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1846US2013214364A1Replacement gate electrode with a tantalum alloy metal layerJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 1946US2013214358A1Low external resistance etsoi transistorsJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 2046US2013309856A1Etch resistant barrier for replacement gate integrationJAGANNATHAN HEMANTH·Filed 2012·Application pending·0 cites
- 2138US2012037999A1Differential stoichiometries by infusion thru gcib for multiple work function metal gate cmosJAGANNATHAN HEMANTH·Filed 2010·Application pending·0 cites
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