Assignee
KO CHIH-HSIN
TW·12 granted patents·5 pending applications·105 citations·filing 2004–2011
Top patents by PatentIndex Score
17 records- 0195US8629478B2Fin structure for high mobility multiple-gate transistorKO CHIH-HSIN·Filed 2010·Granted Jan 14, 2014·22 cites·21 claims
- 0292US8674341B2High-mobility multiple-gate transistor with improved on-to-off current ratioKO CHIH-HSIN·Filed 2009·Granted Mar 18, 2014·16 cites·20 claims
- 0391US8455860B2Reducing source/drain resistance of III-V based transistorsKO CHIH-HSIN·Filed 2009·Granted Jun 4, 2013·15 cites·20 claims
- 0491US8455929B2Formation of III-V based devices on semiconductor substratesKO CHIH-HSIN·Filed 2010·Granted Jun 4, 2013·13 cites·16 claims
- 0589US9768305B2Gradient ternary or quaternary multiple-gate transistorKO CHIH-HSIN·Filed 2009·Granted Sep 19, 2017·14 cites·20 claims
- 0687US8426298B2CMOS devices with Schottky source and drain regionsKO CHIH-HSIN·Filed 2011·Granted Apr 23, 2013·7 cites·14 claims
- 0786US8816391B2Source/drain engineering of devices with high-mobility channelsKO CHIH-HSIN·Filed 2009·Granted Aug 26, 2014·12 cites·19 claims
- 0880US8569146B2Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2011·Granted Oct 29, 2013·4 cites·20 claims
- 0959US8084305B2Isolation spacer for thin SOI devicesKO CHIH-HSIN·Filed 2008·Granted Dec 27, 2011·1 cites·15 claims
- 1058US8569837B2MOS devices having elevated source/drain regionsKO CHIH-HSIN·Filed 2007·Granted Oct 29, 2013·1 cites·18 claims
- 1154US8617976B2Source/drain re-growth for manufacturing III-V based transistorsKO CHIH-HSIN·Filed 2009·Granted Dec 31, 2013·0 cites·19 claims
- 1249US2008191285A1CMOS devices with schottky source and drain regionsKO CHIH-HSIN·Filed 2007·Application pending·0 cites
- 1349US2007161206A1Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2006·Application pending·0 cites
- 1448US9601328B2Growing a III-V layer on silicon using aligned nano-scale patternsKO CHIH-HSIN·Filed 2010·Granted Mar 21, 2017·0 cites·20 claims
- 1546US2005224907A1Isolation structure with nitrogen-containing liner and methods of manufactureKO CHIH-HSIN·Filed 2005·Application pending·0 cites
- 1642US2005285140A1Isolation structure for strained channel transistorsKO CHIH-HSIN·Filed 2004·Application pending·0 cites
- 1738US2006125121A1Capacitor-less 1T-DRAM cell with Schottky source and drainKO CHIH-HSIN·Filed 2005·Application pending·0 cites
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