Assignee
LATTICE POWER JIANGXI CORP
CN·18 granted patents·7 pending applications·95 citations·filing 2006–2013
Top patents by PatentIndex Score
25 records- 0188US7758695B2Method for fabricating metal substrates with high-quality surfacesLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jul 20, 2010·11 cites·28 claims
- 0288US7741632B2InGaAIN light-emitting device containing carbon-based substrate and method for making the sameLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jun 22, 2010·24 cites·20 claims
- 0384US7615420B2Method for manufacturing indium gallium aluminium nitride thin film on silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Nov 10, 2009·10 cites·19 claims
- 0482US8361880B2Semiconductor light-emitting device with metal support substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Jan 29, 2013·11 cites·11 claims
- 0577US7943942B2Semiconductor light-emitting device with double-sided passivationLATTICE POWER JIANGXI CORP·Filed 2008·Granted May 17, 2011·6 cites·20 claims
- 0677US7692205B2Semiconductor light-emitting deviceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 6, 2010·8 cites·6 claims
- 0776US7829359B2Method for fabricating highly reflective ohmic contact in light-emitting devicesLATTICE POWER JIANGXI CORP·Filed 2008·Granted Nov 9, 2010·7 cites·11 claims
- 0870US8383438B2Method for fabricating InGaAIN light-emitting diodes with a metal substrateLATTICE POWER JIANGXI CORP·Filed 2008·Granted Feb 26, 2013·4 cites·16 claims
- 0968US7705348B2Semiconductor light-emitting device with electrode for N-polar InGaAIN surfaceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 27, 2010·3 cites·9 claims
- 1065US7888779B2Method of fabrication InGaAIN film and light-emitting device on a silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 15, 2011·3 cites·24 claims
- 1164US7919784B2Semiconductor light-emitting device and method for making sameLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 5, 2011·2 cites·11 claims
- 1262US8044416B2Method for fabricating high-power light-emitting diode arraysLATTICE POWER JIANGXI CORP·Filed 2008·Granted Oct 25, 2011·2 cites·7 claims
- 1359US8354665B2Semiconductor light-emitting devices for generating arbitrary colorLATTICE POWER JIANGXI CORP·Filed 2008·Granted Jan 15, 2013·2 cites·14 claims
- 1459US8053757B2Gallium nitride light-emitting device with ultra-high reverse breakdown voltageLATTICE POWER JIANGXI CORP·Filed 2007·Granted Nov 8, 2011·1 cites·27 claims
- 1556US9224597B2Method for manufacturing gallium nitride-based film chipLATTICE POWER JIANGXI CORP·Filed 2013·Granted Dec 29, 2015·1 cites·3 claims
- 1651US2011133158A1Method for fabricating ingan-based multi-quantum well layersLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 1750US2008261403A1Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrateLATTICE POWER JIANGXI CORP·Filed 2007·Application pending·0 cites
- 1846US7977663B2Semiconductor light-emitting device with a highly reflective ohmic-electrodeLATTICE POWER JIANGXI CORP·Filed 2008·Granted Jul 12, 2011·0 cites·16 claims
- 1946US2011140081A1Method for fabricating semiconductor light-emitting device with double-sided passivationLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2045US2011147704A1Semiconductor light-emitting device with passivation layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2145US2011147705A1Semiconductor light-emitting device with silicone protective layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2245US2011253972A1LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILMLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2343US2011133159A1Semiconductor light-emitting device with passivation in p-type layerLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 2440US7902556B2Method for fabricating high-quality semiconductor light-emitting devices on silicon substratesLATTICE POWER JIANGXI CORP·Filed 2006·Granted Mar 8, 2011·0 cites·7 claims
- 2539US8384100B2InGaAIN light-emitting device and manufacturing method thereofLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 26, 2013·0 cites·9 claims
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →