Assignee
METZ MATTHEW V
0 granted patents·10 pending applications·0 citations·filing 2004–2006
Top patents by PatentIndex Score
10 records- 0152US2006048703A1Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticleMETZ MATTHEW V·Filed 2005·Application pending·0 cites
- 0250US2006214237A1Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuitMETZ MATTHEW V·Filed 2006·Application pending·0 cites
- 0348US2005272270A1Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a P/N junctionMETZ MATTHEW V·Filed 2005·Application pending·0 cites
- 0444US2006045968A1Atomic layer deposition of high quality high-k transition metal and rare earth oxidesMETZ MATTHEW V·Filed 2004·Application pending·0 cites
- 0541US2006160371A1Inhibiting growth under high dielectric constant filmsMETZ MATTHEW V·Filed 2005·Application pending·0 cites
- 0640US2007232078A1In situ processing for ultra-thin gate oxide scalingMETZ MATTHEW V·Filed 2006·Application pending·0 cites
- 0740US2008003752A1Gate dielectric materials for group III-V enhancement mode transistorsMETZ MATTHEW V·Filed 2006·Application pending·0 cites
- 0837US2005250258A1Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrodeMETZ MATTHEW V·Filed 2004·Application pending·0 cites
- 0937US2005287746A1Facilitating removal of sacrificial layers to form replacement metal gatesMETZ MATTHEW V·Filed 2004·Application pending·0 cites
- 1035US2006060930A1Atomic layer deposition of high dielectric constant gate dielectricsMETZ MATTHEW V·Filed 2004·Application pending·0 cites
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